The invention relates to a method for increasing the purity of oligosilanes and/or oligosilane compounds, in which a first liquid substance mixture formed from at least 50% oligosilane compounds comprising inorganic oligosilanes and/or halogenated oligosilanes and/or organically substituted oligosilanes is provided, and the first liquid substance mixture is subjected to at least one purification sequence, wherein in a first step a) the liquid substance mixture is temperature adjusted to a temperature at which at least one fraction of the oligosilane compounds solidify, and in a second step b) at least one fraction of the liquid substance mixture is separated.

A process for obtaining hexachlorodisilane and uses for the same. The process includes contacting at least one partially hydrogenated chlorodisilane of general formula H.sub.xSi.sub.2Cl.sub.(6-x) where x is from 1 to 5 in the liquid state with a solid non-functionalized adsorber material that is selected from the group comprising silicates, aluminosilicates, organic polymer and/or combinations thereof. The process also includes optionally separating the hexachlorodisilane and/or optionally separating the adsorber material.

A process for obtaining hexachlorodisilane and uses for the same. The process includes contacting at least one partially hydrogenated chlorodisilane of general formula H.sub.xSi.sub.2Cl.sub.(6-x) where x is from 1 to 5 in the liquid state with a solid non-functionalized adsorber material that is selected from the group comprising silicates, aluminosilicates, organic polymer and/or combinations thereof. The process also includes optionally separating the hexachlorodisilane and/or optionally separating the adsorber material.

A process for removing an impurity from a mixture containing at least one chlorosilane and/or organochlorosilane and at least one impurity from the group comprising a boron compound, a phosphorus compound, and an arsenic compound is provided. The process includes contacting the liquid mixture with an unfunctionalized organic polymer having pores with an average pore diameter of less than 50 Å, the average pore diameter being determined in accordance with DIN ISO 66134, and optionally removing the unfunctionalized organic polymer.

To prevent solidified aluminum chloride from adhering to and accumulating on a pipe and also prevent stress-corrosion cracking in the pipe, a method for producing trichlorosilane includes a cooling step of cooling a discharge gas that is discharged from a fluidized-bed reactor and that contains the trichlorosilane, the cooling step involving causing a fluid to flow through a space (4) inside a side wall (3) of a pipe (10), the pipe being a pipe for discharging the discharge gas from the fluidized-bed reactor, in such a manner that the side wall (3) has a surface (1a) having a temperature of not lower than 110° C.

A SiH-free vinyldisilane compound, which is free of (lacks) a silicon-bonded hydrogen atom. The use of the SiH-free vinyldisilane compound, or a collection of such compounds, as a starting material or precursor for synthesizing or making silicon-heteroatom compounds. The silicon-heteroatom compounds synthesized therefrom; films of and devices containing the silicon-heteroatom compounds; methods of making the SiH-free vinyldisilane compound, silicon-heteroatom compounds, films, and devices; and uses of the SiH-free vinyldisilanes, silicon-heteroatom compounds, films, and devices.

A SiH-free vinyldisilane compound, which is free of (lacks) a silicon-bonded hydrogen atom. The use of the SiH-free vinyldisilane compound, or a collection of such compounds, as a starting material or precursor for synthesizing or making silicon-heteroatom compounds. The silicon-heteroatom compounds synthesized therefrom; films of and devices containing the silicon-heteroatom compounds; methods of making the SiH-free vinyldisilane compound, silicon-heteroatom compounds, films, and devices; and uses of the SiH-free vinyldisilanes, silicon-heteroatom compounds, films, and devices.

Provided is a method for purification of iodosilanes, such as diiodosilane. In this method, trace amounts of certain metal ion contaminants are removed, thus providing certain liquid compositions comprising the iodosilanes, which can be used advantageously in the deposition of silicon-containing films onto microelectronic device substrates.

Chlorosilanes are produced in exalted yield in a fluidized bed process when the reactor hydraulic diameter, Sauter particle diameter, and superficial gas velocity are used to define a parameter space as a function of Reynolds number and Archimedes number.

Chlorosilanes are produced in exalted yield in a fluidized bed process when the reactor hydraulic diameter, Sauter particle diameter, and superficial gas velocity are used to define a parameter space as a function of Reynolds number and Archimedes number.