Provided is an inorganic structure including a plurality of zirconium silicate particles; and a binding part that covers a surface of each of the zirconium silicate particles and binds the zirconium silicate particles together. The binding part contains an amorphous compound containing silicon, a metallic element other than silicon, and oxygen, and contains substantially no alkali metal, B, V, Te, P, Bi, Pb and Zn. Also provided is a method for producing an inorganic structure including: a step for obtaining a mixture by mixing a plurality of zirconium silicate particles, a plurality of amorphous silicon dioxide particles, and an aqueous solution containing a metallic element other than silicon; and a step for pressurizing and heating the mixture under conditions of a pressure of 10 to 600 MPa and a temperature of 50 to 300° C.

Provided is an inorganic structure including a plurality of zirconium silicate particles; and a binding part that covers a surface of each of the zirconium silicate particles and binds the zirconium silicate particles together. The binding part contains an amorphous compound containing silicon, a metallic element other than silicon, and oxygen, and contains substantially no alkali metal, B, V, Te, P, Bi, Pb and Zn. Also provided is a method for producing an inorganic structure including: a step for obtaining a mixture by mixing a plurality of zirconium silicate particles, a plurality of amorphous silicon dioxide particles, and an aqueous solution containing a metallic element other than silicon; and a step for pressurizing and heating the mixture under conditions of a pressure of 10 to 600 MPa and a temperature of 50 to 300° C.

The present disclosure discloses an ion conductor with high room-temperature ionic conductivity and a preparation method thereof. This method employs solid-phase sintering and ion exchange technologies, and can prepare crystalline and amorphous transition metal silicate by adjusting the addition ratio of sodium source. The chemical formula of the prepared transition metal silicate is A.sub.2-2xMSiO.sub.4-x, wherein A is Na, Li, Mg, Ca, or Zn; M is a transition metal Fe, Cr, Mn, Co, V, or Ni, when 0<x≤0.5, the prepared transition metal silicate is crystalline, and the degree of crystallization decreases as x increases; and when 0.5<x<1, the transition metal silicate is amorphous.

The present disclosure discloses an ion conductor with high room-temperature ionic conductivity and a preparation method thereof. This method employs solid-phase sintering and ion exchange technologies, and can prepare crystalline and amorphous transition metal silicate by adjusting the addition ratio of sodium source. The chemical formula of the prepared transition metal silicate is A.sub.2-2xMSiO.sub.4-x, wherein A is Na, Li, Mg, Ca, or Zn; M is a transition metal Fe, Cr, Mn, Co, V, or Ni, when 0<x≤0.5, the prepared transition metal silicate is crystalline, and the degree of crystallization decreases as x increases; and when 0.5<x<1, the transition metal silicate is amorphous.

A method for preparing a porous inorganic material by at least: a) reaction of a mixture of one precursor of the oxide of a metal X in solution and a precursor of the oxide of a metal Y at a temperature of between 30 and 70 C., X and Y being, independently aluminum, cobalt, indium, molybdenum, nickel, silicon, titanium, zirconium, zinc, iron, copper, manganese, gallium, germanium, phosphorus, boron, vanadium, tin, lead, hafnium, niobium, yttrium, cerium, gadolinium, tantalum, tungsten, antimony, europium or neodymium; b) mixing of the mixture obtained at the end of a) at a temperature of between 80 and 150 C., the mixing period being adjusted so as to obtain a paste that exhibits a fire loss of between 20% by weight and 90% by weight; c) shaping of the porous inorganic material;
a) to c) being performed within an extruder.