An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. An arc chamber forms a plasma from the aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A hydrogen co-gas source further introduces a hydrogen co-gas to react residual aluminum iodide and iodide, where the reacted residual aluminum iodide and iodide is evacuated from the system.

An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. The ion source has a solid-state material source having aluminum iodide in a solid form. A solid source vaporizer vaporizes the aluminum iodide, defining gaseous aluminum iodide. An arc chamber forms a plasma from the gaseous aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A water vapor source further introduces water to react residual aluminum iodide to form hydroiodic acid, where the residual aluminum iodide and hydroiodic acid is evacuated from the system.

A method includes injecting a feed stream including a hydrogen halide and water into a vapor liquid separator. The feed stream has a liquid phase and a vapor phase. The method further includes separating the liquid phase and the vapor phase in the vapor liquid separator to form condensate and vapor, and discharging the condensate from the vapor liquid separator in a liquid stream. The method also includes discharging the vapor from the vapor liquid separator in a vapor stream.

The present invention provides a process for producing hydrogen iodide. The process includes providing a vapor-phase reactant stream comprising hydrogen and iodine and reacting the reactant stream in the presence of a catalyst to produce a product stream comprising hydrogen iodide. The catalyst includes at least one selected from the group of nickel, cobalt, cobalt halides, iron, nickel oxide, nickel halides, copper, copper oxide, copper halides, cobalt oxide, ferrous chloride, ferric chloride, iron oxide, zinc, zinc oxide, zinc halides, molybdenum, tungsten, magnesium, magnesium oxide, and magnesium halides. The catalyst is supported on a support.

An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. The ion source has a solid-state material source having aluminum iodide in a solid form. A solid source vaporizer vaporizes the aluminum iodide, defining gaseous aluminum iodide. An arc chamber forms a plasma from the gaseous aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A water vapor source further introduces water to react residual aluminum iodide to form hydroiodic acid, where the residual aluminum iodide and hydroiodic acid is evacuated from the system.

The disclosure relates to a novel plant process for purifying hydrogen halide solutions. The process includes halogenating the organic compounds, particularly phenolic compounds, in the hydrogen halide solution to precipitate the halogenated compounds. The halogenated compounds can be filter, the hydrogen halide solution further purified on an adsorbent bed, and the clean hydrogen halide solution can be recycled or used in other processes.