A cerium-zirconium based mixed oxide composition have: (a) a Ce:Zr molar ratio of 1 or less, and (b) a cerium oxide content of 10-50% by weight. The composition has (i) a surface area of at least 18 m.sup.2/g, and a total pore volume as measured by N.sub.2 physisorption of at least 0.11 cm.sup.3/g, after ageing at 1100° C. in an air atmosphere for 6 hours, (ii) a surface area of at least 42 m.sup.2/g, and a total pore volume as measured by N.sub.2 physisorption of at least 0.31 cm.sup.3/g, after ageing at 1000° C. in an air atmosphere for 4 hours, and (iii) Dynamic Oxygen Storage Capacity (D-OSC) value as measured by H.sub.2-TIR of greater than 500 μmol/g at 600° C. after aging at 800° C. in an air atmosphere for 2 hours. A process contacts the exhaust gas with the composition Another process is for preparing the composition.

A cerium-zirconium based mixed oxide composition have: (a) a Ce:Zr molar ratio of 1 or less, and (b) a cerium oxide content of 10-50% by weight. The composition has (i) a surface area of at least 18 m.sup.2/g, and a total pore volume as measured by N.sub.2 physisorption of at least 0.11 cm.sup.3/g, after ageing at 1100° C. in an air atmosphere for 6 hours, (ii) a surface area of at least 42 m.sup.2/g, and a total pore volume as measured by N.sub.2 physisorption of at least 0.31 cm.sup.3/g, after ageing at 1000° C. in an air atmosphere for 4 hours, and (iii) Dynamic Oxygen Storage Capacity (D-OSC) value as measured by H.sub.2-TIR of greater than 500 μmol/g at 600° C. after aging at 800° C. in an air atmosphere for 2 hours. A process contacts the exhaust gas with the composition Another process is for preparing the composition.

The present invention relates to single crystalline RbUO.sub.3, hydrothermal growth processes of making such single crystals and methods of using such single crystals. In particular, Applicants disclose single crystalline RbUO.sub.3 single crystalline RbUO.sub.3 in the Pm-3m space group. Unlike other powdered RbUO.sub.3, Applicants' single crystalline RbUO.sub.3 has a sufficient crystal size to be characterized and used in the fields of neutron detection, radiation-hardened electronics, nuclear forensics, nuclear engineering photovoltaics, lasers, light-emitting diodes, photoelectrolysis and magnetic applications.

The present invention relates to single crystalline RbUO.sub.3, hydrothermal growth processes of making such single crystals and methods of using such single crystals. In particular, Applicants disclose single crystalline RbUO.sub.3 single crystalline RbUO.sub.3 in the Pm-3m space group. Unlike other powdered RbUO.sub.3, Applicants' single crystalline RbUO.sub.3 has a sufficient crystal size to be characterized and used in the fields of neutron detection, radiation-hardened electronics, nuclear forensics, nuclear engineering photovoltaics, lasers, light-emitting diodes, photoelectrolysis and magnetic applications.

Doped cerium oxide particles may comprise about 90 weight percent (wt. %) to about 99.9 wt. % cerium oxide (CeO.sub.2) and up to about 10 wt. % dopant. Exemplary doped cerium oxide particles may have a BET specific surface area of more than 150 m.sup.2/g after calcination at 500° C. for 8 hours. Exemplary doped cerium oxide particles may have an oxygen storage capacity (OSC) of more than 900 μmol.Math.O.sub.2/g after calcination at 500° C. for 8 hours.

The present invention relates to single crystalline RbUO.sub.3, hydrothermal growth processes of making such single crystals and methods of using such single crystals. In particular, Applicants disclose single crystalline RbUO.sub.3 single crystalline RbUO.sub.3 in the Pm-3m space group. Unlike other powdered RbUO.sub.3, Applicants' single crystalline RbUO.sub.3 has a sufficient crystal size to be characterized and used in the fields of neutron detection, radiation-hardened electronics, nuclear forensics, nuclear engineering photovoltaics, lasers, light-emitting diodes, photoelectrolysis and magnetic applications.

The present invention relates to single crystalline RbUO.sub.3, hydrothermal growth processes of making such single crystals and methods of using such single crystals. In particular, Applicants disclose single crystalline RbUO.sub.3 single crystalline RbUO.sub.3 in the Pm-3m space group. Unlike other powdered RbUO.sub.3, Applicants' single crystalline RbUO.sub.3 has a sufficient crystal size to be characterized and used in the fields of neutron detection, radiation-hardened electronics, nuclear forensics, nuclear engineering photovoltaics, lasers, light-emitting diodes, photoelectrolysis and magnetic applications.

A Li ion conductor having a composition different from a conventional composition is provided. The Li ion conductor contains at least one selected from a group Q consisting of Ga, V, and Al, Li, La and O. A part of an Li site is optionally substituted with a metal element D, a part of an La site is optionally substituted with a metal element E, and parts of Ga, V and Al sites are optionally substituted with a metal element J. A mole ratio of an amount of Li to a total amount of La, the element E, Ga, V, Al, and the element J is not lower than 8.1/5 and not higher than 9.5/5. A mole ratio of a total amount of Ga, V, and Al to a total amount of La and the element E is not lower than 1.1/3 and not higher than 2/3.

A Li ion conductor having a composition different from a conventional composition is provided. The Li ion conductor contains at least one selected from a group Q consisting of Ga, V, and Al, Li, La and O. A part of an Li site is optionally substituted with a metal element D, a part of an La site is optionally substituted with a metal element E, and parts of Ga, V and Al sites are optionally substituted with a metal element J. A mole ratio of an amount of Li to a total amount of La, the element E, Ga, V, Al, and the element J is not lower than 8.1/5 and not higher than 9.5/5. A mole ratio of a total amount of Ga, V, and Al to a total amount of La and the element E is not lower than 1.1/3 and not higher than 2/3.

A superconducting wire includes a multilayer stack and a covering layer (stabilizing layer or protective layer). The multilayer stack includes a substrate having a main surface and a superconducting material layer formed on the main surface. The covering layer (stabilizing layer or protective layer) is disposed on at least the superconducting material layer. A front surface portion of the covering layer (stabilizing layer or protective layer) located on the superconducting material layer (front surface portion of the stabilizing layer or upper surface of the protective layer) has a concave shape.