Patent classifications
C01F3/02
Explosive formulations of mixture of carbon dioxide and a reducing agent and methods of using same
The disclosure relates to embodiments of an explosive formulation comprising a detonable mixture of an oxidizing agent such as carbon dioxide, and a material that decomposes the oxidizing agent exothermically (a reducing agent), and additives that increase the mixture's shock sensitivity. The formulations may be used in a method to produce diamonds or nano oxides or in other applications that use traditional explosives such as, but not limited to: ammonium nitrate and fuel oil combinations (ANFO), watergel explosives, emulsion explosives and RDX.
Explosive formulations of mixture of carbon dioxide and a reducing agent and methods of using same
The disclosure relates to embodiments of an explosive formulation comprising a detonable mixture of an oxidizing agent such as carbon dioxide, and a material that decomposes the oxidizing agent exothermically (a reducing agent), and additives that increase the mixture's shock sensitivity. The formulations may be used in a method to produce diamonds or nano oxides or in other applications that use traditional explosives such as, but not limited to: ammonium nitrate and fuel oil combinations (ANFO), watergel explosives, emulsion explosives and RDX.
BERYLLIUM SOLUTION PRODUCTION METHOD, BERYLLIUM PRODUCTION METHOD, BERYLLIUM HYDROXIDE PRODUCTION METHOD, BERYLLIUM OXIDE PRODUCTION METHOD, SOLUTION PRODUCTION DEVICE, BERYLLIUM PRODUCTION SYSTEM, AND BERYLLIUM
This invention has an object to provide a method for producing a beryllium solution, the method being novel and having high energy efficiency. The method (M10) for producing a beryllium solution includes a main heating step (S13) of dielectrically heating an acidic solution containing a starting material so as to generate a beryllium solution, the starting material being beryllium or a substance containing beryllium.
BERYLLIUM SOLUTION PRODUCTION METHOD, BERYLLIUM PRODUCTION METHOD, BERYLLIUM HYDROXIDE PRODUCTION METHOD, BERYLLIUM OXIDE PRODUCTION METHOD, SOLUTION PRODUCTION DEVICE, BERYLLIUM PRODUCTION SYSTEM, AND BERYLLIUM
This invention has an object to provide a method for producing a beryllium solution, the method being novel and having high energy efficiency. The method (M10) for producing a beryllium solution includes a main heating step (S13) of dielectrically heating an acidic solution containing a starting material so as to generate a beryllium solution, the starting material being beryllium or a substance containing beryllium.
METHOD FOR PRODUCING BERYLLIUM SOLUTION, METHOD FOR PRODUCING BERYLLIUM, METHOD FOR PRODUCING BERYLLIUM HYDROXIDE, METHOD FOR PRODUCING BERYLLIUM OXIDE, AND BERYLLIUM OXIDE
This invention has an object to provide a method for producing a beryllium solution by dissolving beryllium oxide, the method being novel and having high energy efficiency. A production method (M10) for producing a beryllium solution includes a main heating step (S13) of dielectrically heating an acidic solution containing beryllium oxide to generate a beryllium solution.
METHOD FOR PRODUCING BERYLLIUM SOLUTION, METHOD FOR PRODUCING BERYLLIUM, METHOD FOR PRODUCING BERYLLIUM HYDROXIDE, METHOD FOR PRODUCING BERYLLIUM OXIDE, AND BERYLLIUM OXIDE
This invention has an object to provide a method for producing a beryllium solution by dissolving beryllium oxide, the method being novel and having high energy efficiency. A production method (M10) for producing a beryllium solution includes a main heating step (S13) of dielectrically heating an acidic solution containing beryllium oxide to generate a beryllium solution.
Dielectric layer and a semiconductor memory device including the dielectric layer as a capacitor dielectric layer
Provided is a dielectric layer that has a rock salt structure in a room temperature stable phase. The dielectric layer is made of a compound having a chemical formula of Be.sub.xM.sub.1-xO, where M includes one of alkaline earth metals and x has a value greater than 0 and not greater than 0.19. A semiconductor memory device also is provided that includes a capacitor composed of a lower electrode; a dielectric layer disposed on the lower electrode; and an upper electrode disposed on the dielectric layer, wherein the dielectric layer has a rocksalt structure in a room temperature stable phase and is made of a compound having a chemical formula shown below,
Be.sub.xM.sub.1-xO, where M comprises an alkaline earth metal and x has a value greater than 0 and not greater than 0.19.
Dielectric layer and a semiconductor memory device including the dielectric layer as a capacitor dielectric layer
Provided is a dielectric layer that has a rock salt structure in a room temperature stable phase. The dielectric layer is made of a compound having a chemical formula of Be.sub.xM.sub.1-xO, where M includes one of alkaline earth metals and x has a value greater than 0 and not greater than 0.19. A semiconductor memory device also is provided that includes a capacitor composed of a lower electrode; a dielectric layer disposed on the lower electrode; and an upper electrode disposed on the dielectric layer, wherein the dielectric layer has a rocksalt structure in a room temperature stable phase and is made of a compound having a chemical formula shown below,
Be.sub.xM.sub.1-xO, where M comprises an alkaline earth metal and x has a value greater than 0 and not greater than 0.19.
DOPED BEO COMPOUNDS FOR OPTICALLY STIMULATED LUMINESCENCE (OSL) AND THERMOLUMINESCENCE (TL) RADIATION DOSIMETRY
The present invention relates generally in part to BeO-based compounds that are capable of storing at least part of the energy of incident ionizing radiation and releasing at least part of the stored energy upon optical stimulation and heating. BeO-based compounds dosimetry was also developed in instrumentation, application and fundamental investigations. The present disclosure further relates the to the investigation of a BeO-based optically stimulated luminescence (OSL) dosimeter together with an OSL reader, and discusses the design and operation of an OSL reader, suitable to measure OSL emission of BeO-based dosimeters, for example beryllium oxide doped with sodium, dysprosium and erbium. The present disclosure further relates to the use of BeO-based compounds comprising BeO and at least one dopant selected from the group consisting of sodium, dysprosium and erbium as a fiber-coupled OSL dosimeter.
DOPED BEO COMPOUNDS FOR OPTICALLY STIMULATED LUMINESCENCE (OSL) AND THERMOLUMINESCENCE (TL) RADIATION DOSIMETRY
The present invention relates generally in part to BeO-based compounds that are capable of storing at least part of the energy of incident ionizing radiation and releasing at least part of the stored energy upon optical stimulation and heating. BeO-based compounds dosimetry was also developed in instrumentation, application and fundamental investigations. The present disclosure further relates the to the investigation of a BeO-based optically stimulated luminescence (OSL) dosimeter together with an OSL reader, and discusses the design and operation of an OSL reader, suitable to measure OSL emission of BeO-based dosimeters, for example beryllium oxide doped with sodium, dysprosium and erbium. The present disclosure further relates to the use of BeO-based compounds comprising BeO and at least one dopant selected from the group consisting of sodium, dysprosium and erbium as a fiber-coupled OSL dosimeter.