The disclosure relates to embodiments of an explosive formulation comprising a detonable mixture of an oxidizing agent such as carbon dioxide, and a material that decomposes the oxidizing agent exothermically (a reducing agent), and additives that increase the mixture's shock sensitivity. The formulations may be used in a method to produce diamonds or nano oxides or in other applications that use traditional explosives such as, but not limited to: ammonium nitrate and fuel oil combinations (ANFO), watergel explosives, emulsion explosives and RDX.

The disclosure relates to embodiments of an explosive formulation comprising a detonable mixture of an oxidizing agent such as carbon dioxide, and a material that decomposes the oxidizing agent exothermically (a reducing agent), and additives that increase the mixture's shock sensitivity. The formulations may be used in a method to produce diamonds or nano oxides or in other applications that use traditional explosives such as, but not limited to: ammonium nitrate and fuel oil combinations (ANFO), watergel explosives, emulsion explosives and RDX.

A MgO layer is formed using a process flow wherein a Mg layer is deposited at a temperature <200° C. on a substrate, and then an anneal between 200° C. and 900° C., and preferably from 200° C. and 400° C., is performed so that a Mg vapor pressure >10.sup.−6 Torr is reached and a substantial portion of the Mg layer sublimes and leaves a Mg monolayer. After an oxidation between −223° C. and 900° C., a MgO monolayer is produced where the Mg:O ratio is exactly 1:1 thereby avoiding underoxidized or overoxidized states associated with film defects. The process flow may be repeated one or more times to yield a desired thickness and resistance×area value when the MgO is a tunnel barrier or Hk enhancing layer. Moreover, a doping element (M) may be added during Mg deposition to modify the conductivity and band structure in the resulting MgMO layer.

The present disclosure discloses a method for strengthening a biological manganese oxidation using a magnetic field and use thereof. The method includes steps of inoculating a manganese-oxidizing microorganism into a culture medium containing Mn.sup.2+, performing magnetization treatment in a culture process, and then collecting a biogenic manganese oxide. The method includes steps of performing a primary magnetic field treatment at a magnetic field intensity of 0.2-50 mT for 1-5 h when culturing is performed for 6-12 h, continuing culturing after the primary magnetization treatment, and performing magnetization treatment once every other 24 h for culture time of 72 h. A magnetic field is applied to accelerate an oxidation rate of a manganese-oxidizing microorganism to Mn.sup.2+and a biological manganese oxidation rate is respectively improved by 36.4% and 23.8% under an action of an alternating magnetic field or a constant magnetic field within 72 h.

The present disclosure discloses a method for strengthening a biological manganese oxidation using a magnetic field and use thereof. The method includes steps of inoculating a manganese-oxidizing microorganism into a culture medium containing Mn.sup.2+, performing magnetization treatment in a culture process, and then collecting a biogenic manganese oxide. The method includes steps of performing a primary magnetic field treatment at a magnetic field intensity of 0.2-50 mT for 1-5 h when culturing is performed for 6-12 h, continuing culturing after the primary magnetization treatment, and performing magnetization treatment once every other 24 h for culture time of 72 h. A magnetic field is applied to accelerate an oxidation rate of a manganese-oxidizing microorganism to Mn.sup.2+and a biological manganese oxidation rate is respectively improved by 36.4% and 23.8% under an action of an alternating magnetic field or a constant magnetic field within 72 h.

A lithium-ion battery includes: a cathode; an anode; and a non-aqueous electrolyte solution, in which the cathode includes a current collector and a cathode mixture applied on at least one side of the current collector, the cathode mixture includes a lithium transition metal oxide as a cathode active material, the anode includes a lithium titanium complex oxide as an anode active material, and the non-aqueous electrolyte solution includes a fluorine-containing boric acid ester.

The invention relates to a process and devices for reducing impurities in molten salts, a molten salt being purified in an electrochemical process by applying a voltage between two electrodes. According to the invention, the voltage is varied so that in different phases different electrodes act as cathode or anode.

A MgO layer is formed using a process flow wherein a Mg layer is deposited at a temperature <200° C. on a substrate, and then an anneal between 200° C. and 900° C., and preferably from 200° C. and 400° C., is performed so that a Mg vapor pressure >10.sup.−6 Torr is reached and a substantial portion of the Mg layer sublimes and leaves a Mg monolayer. After an oxidation between −223° C. and 900° C., a MgO monolayer is produced where the Mg:O ratio is exactly 1:1 thereby avoiding underoxidized or overoxidized states associated with film defects. The process flow may be repeated one or more times to yield a desired thickness and resistance×area value when the MgO is a tunnel barrier or Hk enhancing layer. Moreover, a doping element (M) may be added during Mg deposition to modify the conductivity and band structure in the resulting MgMO layer.

A MgO layer is formed using a process flow wherein a Mg layer is deposited at a temperature <200° C. on a substrate, and then an anneal between 200° C. and 900° C., and preferably from 200° C. and 400° C., is performed so that a Mg vapor pressure >10.sup.−6 Torr is reached and a substantial portion of the Mg layer sublimes and leaves a Mg monolayer. After an oxidation between −223° C. and 900° C., a MgO monolayer is produced where the Mg:O ratio is exactly 1:1 thereby avoiding underoxidized or overoxidized states associated with film defects. The process flow may be repeated one or more times to yield a desired thickness and resistance x area value when the MgO is a tunnel barrier or Hk enhancing layer. Moreover, a doping element (M) may be added during Mg deposition to modify the conductivity and band structure in the resulting MgMO layer.

The invention is a method for coproducing Hydrogen and certain metals by reducing a metal oxide(s) with MgH.sub.2 or with metal and water, wherein the non-water oxides used in the method include SiO.sub.2, Cr.sub.2O.sub.3, TiO.sub.2, SnO.sub.2, ZrO.sub.2, CuO, ZnO, WO.sub.3, Ta.sub.2O.sub.5, Cs.sub.2Cr.sub.2O.sub.7 or CsOH. The method reacts the MgH.sub.2 with a metal oxide or directly uses metal and water instead of a hydride, and initiates a reaction with the metal oxide. The reaction releases Hydrogen and reduces the subject oxide to metal.