This present disclosure provides a core-shell quantum dot, a preparation method thereof, and a light-emitting device containing the same. The core of the core-shell quantum dot is CdSe.sub.XS.sub.(1-X), and the quantum dot shells include a first shell and a second shell, the first shell being selected from one or more of ZnSe, ZnSe.sub.YS.sub.(1-Y) and Cd.sub.(Z)Zn.sub.(1-Z)S, the second shell covering the first shell being one of Cd.sub.(Z)Zn.sub.(1-Z)S and ZnS, the maximum emission peak of the core-shell quantum dot is less than or equal to 480 nm, 0<X<1, 0<Y<1, 0<Z<1. The CdSe.sub.XS.sub.(1-X) core has a smaller bandgap and a shallower HOMO energy level, making hole injection easier.

A luminescent composite material and a preparation method therefor. The luminescent composite material is prepared by mixing a precursor of a quantum dot and an oxide or a precursor thereof followed by high-temperature calcination. Compared with traditional methods, the method provided herein is a simple and low-cost synthesis process without using solvents, and is suitable for large-scale production. The luminescent composite material has high quantum efficiency, luminous intensity and luminous color purity and good photothermal stability, which can provide basis for theoretical research and applications of the luminescent composite material in high-performance photoluminescence devices, lasers and nonlinear optical devices.

Disclosed is an ink including at least one particle including a first material; and at least one liquid vehicle; wherein the particle includes at least one particle including a second material and at least one nanoparticle dispersed in the second material; wherein the first material and the second material have an extinction coefficient less or equal to 1510.sup.5 at 460 nm. The invention also relates to inks, light emitting materials including at least one ink, patterns including at least one ink, particles deposited on a support, optoelectronic devices including at least one ink and method for depositing an ink on a support.

A process for preparing a mesoporous material, e.g., transition metal oxide, sulfide, selenide or telluride, Lanthanide metal oxide, sulfide, selenide or telluride, a post-transition metal oxide, sulfide, selenide or telluride, and metalloid oxide, sulfide, selenide or telluride. The process comprises providing a micellar solution comprising a metal precursor, an interface modifier, a hydrotropic or lyotropic ion precursor, and a surfactant; and heating the micellar solution at a temperature and for a period of time sufficient to form the mesoporous material. A mesoporous material prepared by the above process. A method of controlling nano-sized wall crystallinity and mesoporosity in mesoporous materials. The method comprises providing a micellar solution comprising a metal precursor, an interface modifier, a hydrotropic or lyotropic ion precursor, and a surfactant; and heating the micellar solution at a temperature and for a period of time sufficient to control nano-sized wall crystallinity and mesoporosity in the mesoporous materials. Mesoporous materials and a method of tuning structural properties of mesoporous materials.

A process for preparing alloy products powders is described using a self-sustaining or self-propagating SHS-type combustion process. Binary, ternary and quaternary alloy having cadmium, selenium and optionally a third element X or Y selected from Group VIA (such as S or Te) or from group IIB (such as Zn or Hg). The alloy products may be doped or not with a wide variety of other elements. The process involves heating to ignition, maintaining an elevated temperature less than melting for homogenization, followed by cooling and crushing. An optional de-oxidation process may follow to further purify the alloy and balance the stoichiometry.

A process for preparing alloy products powders is described using a self-sustaining or self-propagating SHS-type combustion process. Binary, ternary and quaternary alloy having cadmium, selenium and optionally a third element X or Y selected from Group VIA (such as S or Te) or from group IIB (such as Zn or Hg). The alloy products may be doped or not with a wide variety of other elements. The process involves heating to ignition, maintaining an elevated temperature less than melting for homogenization, followed by cooling and crushing. An optional de-oxidation process may follow to further purify the alloy and balance the stoichiometry.