A method for separating zirconium oxide/hafnium oxide by pyrometallurgy. The mixture of zirconium oxide/hafnium oxide, carbon and pure bromine react one hour at 650? C., then added to molten salt mixture for rectifying separation, and then maintained two hours at rectifying tower bottom below 357? C., to get the non-target substance; and then maintained five hours at 357? C. to collect the target substance zirconium tetrabromide; the residue in the reactor is retained, then rectification separation is performed in the same device, heated to 400? C. to retain more than five hours, to get hafnium tetrabromide, then the zirconium tetrabromide and hafnium tetrabromide are substituted by magnesium to get the pure zirconium and pure hafnium.

A method for separating zirconium oxide/hafnium oxide by pyrometallurgy. The mixture of zirconium oxide/hafnium oxide, carbon and pure bromine react one hour at 650? C., then added to molten salt mixture for rectifying separation, and then maintained two hours at rectifying tower bottom below 357? C., to get the non-target substance; and then maintained five hours at 357? C. to collect the target substance zirconium tetrabromide; the residue in the reactor is retained, then rectification separation is performed in the same device, heated to 400? C. to retain more than five hours, to get hafnium tetrabromide, then the zirconium tetrabromide and hafnium tetrabromide are substituted by magnesium to get the pure zirconium and pure hafnium.

A precursor vessel comprises a hafnium halide precursor. The hafnium halide precursor comprises less than 1 ppm of at least one impurity. The at least one impurity comprises at least one of a titanium contaminant, a chromium contaminant, an aluminum contaminant, an iron contaminant, or any combination thereof. Related systems and related methods are also provided, including, for example and without limitation, systems for delivery of vapor precursors, methods for purifying a precursor, and the like.

A precursor vessel comprises a hafnium halide precursor. The hafnium halide precursor comprises less than 1 ppm of at least one impurity. The at least one impurity comprises at least one of a titanium contaminant, a chromium contaminant, an aluminum contaminant, an iron contaminant, or any combination thereof. Related systems and related methods are also provided, including, for example and without limitation, systems for delivery of vapor precursors, methods for purifying a precursor, and the like.