In accordance with the purpose(s) of the present disclosure, as embodied and broadly described herein, the disclosure, in one aspect, relates to compound Bi-poor perovskite crystals, methods for making the same, and ionizing and other electromagnetic radiation detectors constructed using the Bi-poor perovskite crystals. The Bi-poor perovskite crystals can be synthesized using melt-based growth methods and solution-based growth methods and contain no toxic heavy metals such as lead, cadmium, thallium, or mercury. Devices fabricated from the crystals maintain acceptable levels of performance over time. In some aspects, post-growth annealing can be used to improve the properties, including, but not limited to, room temperature resistivity and response to radiation.

A dielectric material, a method of manufacturing thereof, and a dielectric device and an electronic device including the same. A dielectric material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of the monolayer nanosheets, or a combination thereof, wherein the dielectric material includes a two-dimensional layered material having a two-dimensional crystal structure and the two-dimensional layered material is represented by Chemical Formula 1.

Methods of synthesizing Bi.sub.2S.sub.3-CdS particles in the form of spheres as well as properties of these Bi.sub.2S.sub.3-CdS particles are described. Methods of photocatalytic degradation of organic pollutants employing these Bi.sub.2S.sub.3-CdS particles and methods of preventing or reducing microbial growth on a surface by applying these Bi.sub.2S.sub.3-CdS particles in the form of a solution or an antimicrobial product onto the surface are also specified.

The present disclosure provides a thermoelectric conversion material having a composition represented by a chemical formula of Ba.sub.1-a-b-cSr.sub.bCa.sub.cK.sub.aMg.sub.2Bi.sub.2-dSb.sub.d. In the chemical formula, the following relationships are satisfied: 0.002≤a≤0.1, 0≤b, 0≤c, a+b+c≤1, and 0≤d≤2. In addition, the thermoelectric conversion material has a La.sub.2O.sub.3-type crystal structure.

The invention provides a process for the preparation of bismuth oxyhalide, comprising a precipitation of bismuth oxyhalide in an acidic aqueous medium in the presence of a reducing agent. Also provided are bismuth oxyhalide compounds doped with elemental bismuth Bi.sup.(0). The use of Bi.sup.(0)doped-bismuth oxyhalide as photocatalysts in water purification is also described.

The present invention provides a two-dimensional double perovskite nanomaterial represented by the formula Cs.sub.2ABX.sub.6 or L.sub.4[Cs.sub.2ABX.sub.6].sub.n-1ABX.sub.8, wherein A is a metal ion selected from Ag(I), Au(I), and Cu(I); B is a metal ion selected from In(III), Bi(III), Sb(III), Fe(III), and Tl(III); X is a halogen; L is a ligand; and n represents the number of metal-halide octahedral layers present in said nanomaterial. The invention further provides a light emitting material and electronic-, optic-, or optoelectronic device comprising said nanomaterial; as well as methods for the preparation of said nanomaterial.

The present disclosure relates to a method that includes treating a liquid that includes a first precursor at a concentration C.sub.1, a second precursor at a concentration C.sub.2, a third precursor at a concentration C.sub.3, and an additive at a concentration C.sub.4, where the treating results in a perovskite, each of C.sub.1, C.sub.2, and C.sub.3 are between 0.001 M and 100 M, inclusively, and at least one of C.sub.4/C.sub.1 or C.sub.4/C.sub.2 equals a ratio greater than or equal to zero

Provided is a solid electrolyte material represented by a composition formula Li.sub.3−3δY.sub.1+δ−aM.sub.aCl.sub.6−x−yBr.sub.xI.sub.y, where M is at least one element selected from the group consisting of Al, Sc, Ga, and Bi; −1<δ<1; 0<a<2; 0<(1+δ−a); 0≤x≤6; 0≤y≤6; and (x+y)≤6.

The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B.sup.I]; (iii) one or more trications [B.sup.III]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B.sup.I] selected from Cu.sup.+, Ag.sup.+ and Au.sup.+; (iii) one or more trications [B.sup.III]; and (iv) one or more halide anions [X].

The present invention relates to a method of preparing a buffer material composed of bentonite modified with a layered double hydroxide (LDH) as a buffer material used for deep geological disposal of radioactive waste, the method including a step (a) of producing a first mixture by adding a compound containing a divalent cationic material, aluminum nitrate (Al(NO.sub.3).sub.3), and bismuth nitrate (Bi(NO.sub.3).sub.3) to a reactor.