Patent classifications
C01G3/05
Purification process for the preparation of non-carrier added copper-64
Compositions comprising high levels of high specific activity copper-64, and process for preparing said compositions. The compositions comprise from about 2 Ci to about 15 Ci of copper-64 and have specific activities up to about 3800 mCi copper-64 per microgram of copper. The processes for preparing said compositions comprise bombarding a nickel-64 target with a low energy, high current proton beam, and purifying the copper-64 from other metals by a process comprising ion exchange chromatography or a process comprising a combination of extraction chromatography and ion exchange chromatography.
COPPER HALIDE LAYERS
Articles are described including a substrate and a copper halide layer on the substrate, where the interfacial free energy between the substrate and the copper halide layer allows the copper halide layer to form continuously, wherein the copper halide layer conforms to the shape of the substrate. The articles may further include an adhesion layer disposed in-between the substrate and the copper halide layer, where the surface free energy between the adhesion layer and the copper halide layer allows the copper halide layer to form continuously, wherein the copper halide layer or the adhesion layer conform to the shape of the substrate. Also described are methods of forming an article using chemical vapor deposition.
COPPER HALIDE LAYERS
Articles are described including a substrate and a copper halide layer on the substrate, where the interfacial free energy between the substrate and the copper halide layer allows the copper halide layer to form continuously, wherein the copper halide layer conforms to the shape of the substrate. The articles may further include an adhesion layer disposed in-between the substrate and the copper halide layer, where the surface free energy between the adhesion layer and the copper halide layer allows the copper halide layer to form continuously, wherein the copper halide layer or the adhesion layer conform to the shape of the substrate. Also described are methods of forming an article using chemical vapor deposition.
PURIFICATION PROCESS FOR THE PREPARATION OF NON-CARRIER ADDED COPPER-64
Compositions comprising high levels of high specific activity copper-64, and process for preparing said compositions. The compositions comprise from about 2 Ci to about 15 Ci of copper-64 and have specific activities up to about 3800 mCi copper-64 per microgram of copper. The processes for preparing said compositions comprise bombarding a nickel-64 target with a low energy, high current proton beam, and purifying the copper-64 from other metals by a process comprising ion exchange chromatography or a process comprising a combination of extraction chromatography and ion exchange chromatography.
PREPARATION METHOD FOR ELECTRONIC-GRADE COPPER CHLORIDE DIHYDRATE
The present disclosure relates to the technical field of preparation of copper chloride, and in particular to a method of preparing an electronic-grade copper chloride dihydrate, which mainly includes the following steps: dissolving a copper salt in a first hydrochloric acid solution to obtain a copper salt solution; performing two solid-liquid separations for the copper salt solution to obtain a filtrate; wherein, the two solid-liquid separations do not have sequence and include an adhesive separation and a co-precipitation separation; the adhesive separation is a solid-liquid separation performed by adding a waste PCB board powder and continuously stirring; the co-precipitation separation is a solid-liquid separation performed by adding tin chloride compound and continuously stirring; adding a second hydrochloric acid into the filtrate and adjusting pH and then performing evaporation concentration to a supersaturated solution, adding copper chloride seed crystal and then performing cooling crystallization and centrifugal separation.
PREPARATION METHOD FOR ELECTRONIC-GRADE COPPER CHLORIDE DIHYDRATE
The present disclosure relates to the technical field of preparation of copper chloride, and in particular to a method of preparing an electronic-grade copper chloride dihydrate, which mainly includes the following steps: dissolving a copper salt in a first hydrochloric acid solution to obtain a copper salt solution; performing two solid-liquid separations for the copper salt solution to obtain a filtrate; wherein, the two solid-liquid separations do not have sequence and include an adhesive separation and a co-precipitation separation; the adhesive separation is a solid-liquid separation performed by adding a waste PCB board powder and continuously stirring; the co-precipitation separation is a solid-liquid separation performed by adding tin chloride compound and continuously stirring; adding a second hydrochloric acid into the filtrate and adjusting pH and then performing evaporation concentration to a supersaturated solution, adding copper chloride seed crystal and then performing cooling crystallization and centrifugal separation.
Basic copper chloride particulate matter and preparation method therefor
Disclosed are basic copper chloride particulate matter and a preparation method therefor. The basic copper chloride particulate matter is mainly composed of basic copper chloride particles, and the basic copper chloride particles, with a particle size of 60-250 μm, in the basic copper chloride particulate matter comprise 97% or more of the total mass of the basic copper chloride particulate matter.
Basic copper chloride particulate matter and preparation method therefor
Disclosed are basic copper chloride particulate matter and a preparation method therefor. The basic copper chloride particulate matter is mainly composed of basic copper chloride particles, and the basic copper chloride particles, with a particle size of 60-250 μm, in the basic copper chloride particulate matter comprise 97% or more of the total mass of the basic copper chloride particulate matter.
Method for Preparing Cuprous Chloride by High-value Utilization of Chloride Ion-containing Wasterwater
The disclosure discloses a method for preparing cuprous chloride by high-value utilization of chloride ion-containing wastewater, belonging to the field of wastewater treatment. According to the disclosure, wastewater containing chloride ions is taken, and the pH is maintained at 2 to 3.5. Cuprous oxide is added by 50 to 80% of a theoretical amount of the cuprous oxide according to a Cl.sup.− concentration for reaction 8 to 15 min. Centrifugation is performed to obtain crude cuprous chloride and supernatant. Cuprous oxide is added to the resulting supernatant for reaction 8 to 15 min, and a total of cuprous oxide added in two reactions accounts for 90 to 100% of the theoretical amount. Centrifugation is performed after the reaction to obtain crude cuprous chloride. According to the method of the disclosure, the amount of cuprous oxide used is greatly reduced, and the purity of the cuprous chloride is improved.
Method for Preparing Cuprous Chloride by High-value Utilization of Chloride Ion-containing Wasterwater
The disclosure discloses a method for preparing cuprous chloride by high-value utilization of chloride ion-containing wastewater, belonging to the field of wastewater treatment. According to the disclosure, wastewater containing chloride ions is taken, and the pH is maintained at 2 to 3.5. Cuprous oxide is added by 50 to 80% of a theoretical amount of the cuprous oxide according to a Cl.sup.− concentration for reaction 8 to 15 min. Centrifugation is performed to obtain crude cuprous chloride and supernatant. Cuprous oxide is added to the resulting supernatant for reaction 8 to 15 min, and a total of cuprous oxide added in two reactions accounts for 90 to 100% of the theoretical amount. Centrifugation is performed after the reaction to obtain crude cuprous chloride. According to the method of the disclosure, the amount of cuprous oxide used is greatly reduced, and the purity of the cuprous chloride is improved.