Provided is a molybdenum oxychloride characterized in having a purity of 99.9995 wt % or higher. Additionally provided is a manufacturing method of a molybdenum oxychloride including the steps of reacting MoO.sub.3 and Cl.sub.2 and synthesizing the molybdenum oxychloride in a reaction chamber, and cooling the synthesized molybdenum oxychloride gas and precipitating the molybdenum oxychloride in a recovery chamber, wherein an impurity trap is provided between the reaction chamber and the recovery chamber, and impurities are removed with the impurity trap. An object of the present invention is to provide a high-purity molybdenum oxychloride and a manufacturing method therefor.

A treatment method according to the present invention includes bringing a metal oxyfluoride of the general formula: MO.sub.(6-x)/2F.sub.x (where 0<x<6; and M=W or Mo) into contact with a fluorine-containing gas at a reaction temperature higher than or equal to 0° C. and lower than 400° C., thereby converting the metal oxyfluoride to a metal hexafluoride of the general formula: MF.sub.6 (where M=W or Mo). This treatment method enables conversion of the metal oxyfluoride to the high vapor pressure compound without the use of a plasma generator and can be applied to cleaning of a metal fluoride production apparatus or cleaning of a film forming apparatus.

A treatment method according to the present invention includes bringing a metal oxyfluoride of the general formula: MO.sub.(6-x)/2F.sub.x (where 0<x<6; and M=W or Mo) into contact with a fluorine-containing gas at a reaction temperature higher than or equal to 0° C. and lower than 400° C., thereby converting the metal oxyfluoride to a metal hexafluoride of the general formula: MF.sub.6 (where M=W or Mo). This treatment method enables conversion of the metal oxyfluoride to the high vapor pressure compound without the use of a plasma generator and can be applied to cleaning of a metal fluoride production apparatus or cleaning of a film forming apparatus.

Provided is a process which allows uranium and molybdenum fluorides to be efficiently separated, said process comprising a step of providing a mixture containing MoF.sub.6 and UF.sub.6; a step of reducing the UF.sub.6 to UF.sub.5 in the gas phase or in a liquid phase; and a step of separating the UF.sub.5 and the MoF.sub.6 or a conversion product thereof which may be obtained by further converting the molybdenum fluoride to another molybdenum compound. In a further aspect, a process for the fluorination of metals or semimetals is provided.

Provided is a process which allows uranium and molybdenum fluorides to be efficiently separated, said process comprising a step of providing a mixture containing MoF.sub.6 and UF.sub.6; a step of reducing the UF.sub.6 to UF.sub.5 in the gas phase or in a liquid phase; and a step of separating the UF.sub.5 and the MoF.sub.6 or a conversion product thereof which may be obtained by further converting the molybdenum fluoride to another molybdenum compound. In a further aspect, a process for the fluorination of metals or semimetals is provided.

Aspects disclosed herein include a system for generating singlet oxygen in a gas, the system comprising: a substrate; and hexanuclear clusters operably immobilized on at least a portion of the substrate; wherein each hexanuclear cluster comprises a photosensitive octahedral core complex characterized by formula FX1a: M.sub.6X.sub.8 (FX1a); wherein each M is independently Mo, W, or Re; wherein each X is independently a halide anion ligand; wherein the clusters are exposed to the gas and the gas comprises O.sub.2 gas; wherein the clusters are exposed to a light; and wherein each hexanuclear cluster is a photosensitizer configured to generate the gaseous singlet oxygen when irradiated by the light in the presence of the O.sub.2 gas.

Provided are a method of producing high-purity molybdenum hexafluoride in good yield and a reaction apparatus therefor.

The method of producing molybdenum hexafluoride, in a production apparatus for molybdenum hexafluoride including a fixed bed that is for mounting metallic molybdenum and that extends inside a reactor from an upstream side to a downstream side of the reactor, a fluorine (F.sub.2) gas inlet provided on the upstream side of the reactor, and a reaction product gas outlet provided on the downstream side of the reactor, comprises bringing metallic molybdenum into contact with fluorine (F.sub.2) gas, where the fixed bed for mounting metallic molybdenum is tilted.

Provided are a method of producing high-purity molybdenum hexafluoride in good yield and a reaction apparatus therefor.

The method of producing molybdenum hexafluoride, in a production apparatus for molybdenum hexafluoride including a fixed bed that is for mounting metallic molybdenum and that extends inside a reactor from an upstream side to a downstream side of the reactor, a fluorine (F.sub.2) gas inlet provided on the upstream side of the reactor, and a reaction product gas outlet provided on the downstream side of the reactor, comprises bringing metallic molybdenum into contact with fluorine (F.sub.2) gas, where the fixed bed for mounting metallic molybdenum is tilted.

A treatment method for a metal oxyfluoride according to the present invention includes bringing a metal oxyfluoride of the general formula: MO.sub.(6-x)/2F.sub.x (where 0<x<6; and M=W or Mo) into contact with a fluorine-containing gas at a reaction temperature higher than or equal to 0° C. and lower than 400° C., thereby converting the metal oxyfluoride to a metal hexafluoride of the general formula: MF.sub.6 (where M=W or Mo). This treatment method enables conversion of the metal oxyfluoride to the high vapor pressure compound without the use of a plasma generator and can be applied to cleaning of a metal fluoride production apparatus or cleaning of a film forming apparatus.

A treatment method for a metal oxyfluoride according to the present invention includes bringing a metal oxyfluoride of the general formula: MO.sub.(6-x)/2F.sub.x (where 0<x<6; and M=W or Mo) into contact with a fluorine-containing gas at a reaction temperature higher than or equal to 0° C. and lower than 400° C., thereby converting the metal oxyfluoride to a metal hexafluoride of the general formula: MF.sub.6 (where M=W or Mo). This treatment method enables conversion of the metal oxyfluoride to the high vapor pressure compound without the use of a plasma generator and can be applied to cleaning of a metal fluoride production apparatus or cleaning of a film forming apparatus.