Patent classifications
C01G41/006
ELECTROMAGNETIC WAVE ABSORBING PARTICLES, ELECTROMAGNETIC WAVE ABSORBING PARTICLE DISPERSION LIQUID, AND METHOD FOR MANUFACTURING ELECTROMAGNETIC WAVE ABSORBING PARTICLES
Electromagnetic Electromagnetic wave absorbing particles including cesium tungsten oxide represented by a general formula Cs.sub.xW.sub.1-yO.sub.3-z (0.2≤x≤0.4, 0<y≤0.4, and 0<z≤0.46) and having an orthorhombic crystal structure or a hexagonal crystal structure are provided.
Polyoxometalates Comprising Noble Metals and Metal Cluster Units Thereof
The invention relates to polyoxometalates represented by the formula (A.sub.n)m.sup.+[(MR′.sub.t).sub.sO.sub.yH.sub.qR.sub.z(X.sub.8W.sub.48+rO.sub.184+4r)].sup.m− or solvates thereof, corresponding supported polyoxometalates, and processes for their preparation, as well as corresponding metal cluster units, optionally in the form of a dispersion in a liquid carrier medium or immobilized on a solid support, and processes for their preparation, as well as their use in conversion of organic substrate.
High Q modified barium-based materials for high frequency applications
Disclosed are embodiments of high Q modified materials. In some embodiments, complex tungsten oxides and/or hexagonal perovskite crystal structures can be added to provide for advantageous properties. In some embodiments, no tin is used in the formation of the material.
LITHIUM ION CONDUCTIVE SOLID ELECTROLYTE AND PRODUCTION METHOD FOR LITHIUM ION CONDUCTIVE SOLID ELECTROLYTE
A lithium ion conductive solid electrolyte contains a lithium ion conductive powder having a garnet-type crystal structure including at least Li, La, Zr, and O, and a lithium ion conductive polymer. The lithium ion conductive solid electrolyte can maintain its shape without use of an additional polymer different from the lithium ion conductive polymer. The lithium ion conductive solid electrolyte exhibits an activation energy of 30 kJ/mol or less at 20° C. to 80° C.
LI/NA-ION BATTERY ANODE MATERIALS
The invention relates to active electrode materials and to methods for the manufacture of active electrode materials. Such materials are of interest as active electrode materials in lithium-ion or sodium-ion batteries. The invention provides an active electrode material expressed by the general formula [M1].sub.x[M2].sub.(1−x)[Nb]y[O].sub.z, wherein: M1 and M2 are different; M1 represents one or more of Ti, Mg, V, Cr, W, Zr, Mo, Cu, Fe, Ga, Ge, Ca, K, Ni, Co, Al, Sn, Mn, Ce, Te, Se, Si, Sb, Y, La, Hf, Ta, Re, Zn, In, or Cd; M2 represents one or more of Mg, V, Cr, W, Zr, Mo, Cu, Ga, Ge, Ca, K, Ni, Co, Al, Sn, Mn, Ce, Sb, Y, La, Hf, Ta, Zn, In, or Cd; and wherein x satisfies 0<x<0.5; y satisfies 0.5≤y≤49 z satisfies 4≤z≤124.
Control of oxygen fugacity in a high pressure solid media assembly using a double capsule
A double capsule assembly includes an outer capsule and an inner capsule configured to be positioned within the outer capsule. The inner capsule is configured to have a sample positioned therein. The double capsule assembly is configured to be placed in a solid media assembly to analyze or synthesize the sample.
Oxide sintered material, method of producing oxide sintered material, sputtering target, and method of producing semiconductor device
The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.
TUNGSTEN OXIDE MATERIAL, TUNGSTEN OXIDE POWDER MASS FOR ELECTROCHROMIC DEVICE, AND SLURRY FOR PRODUCING ELECTROCHROMIC DEVICE
According to one embodiment, a tungsten oxide material containing potassium is provided. The tungsten oxide material has a shape of particles including a central section and a peripheral section adjacent to the central section, and having an average particle size of 100 nm or less. A periodicity of a crystal varies between the central section and the peripheral section. In addition, a tungsten oxide powder mass for an electrochromic device including 80% by mass to 100% by mass of the tungsten oxide material is provided. Moreover, a slurry for producing an electrochromic device containing the above tungsten oxide material is provided.
Near-infrared absorbing material fine particle dispersion, near-infrared absorber, near-infrared absorber laminate, and laminated structure for near-infrared absorption
A near-infrared absorbing material fine particle dispersion, a near-infrared absorber laminate, and a laminated structure for near-infrared absorption can exhibit higher near-infrared absorption property, compared to near-infrared fine particle dispersions, near-infrared absorber laminates, and laminated structures for near-infrared absorption, containing tungsten oxides or composite tungsten oxides according to the conventional art. Also, a near-infrared absorbing material fine particle dispersion in which composite tungsten oxide fine particles, each particle containing a hexagonal crystal structure, and a polymer compound with maleic anhydride introduced therein are contained in the polypropylene resin, and the near-infrared absorber laminate and the laminated structure for near-infrared absorption using the dispersion.
Tungsten oxide-based material
A material of Formula (I) is provided
M.sub.yT.sub.xQ.sub.vW.sub.1-vO.sub.z-tJ.sub.t (I)
where:
T represents one of tin, lead, antimony and germanium, T being present in the interstitial spaces or voids of the lattice,
M represents one or more species, each selected from the group consisting of (i) metals other than T, and (ii) polyatomic ionic species, said polyatomic species having an ionic radius of no more than 2 Å, M being present in the interstitial spaces or voids of the lattice,
W is tungsten,
O is oxygen,
Q represents one or more element having an oxidation state of at least +4, Q, if present, occupying a lattice point of W,
J represents one or more non-metallic element anion of chemical valence −1, J, if present, occupying a lattice point of O,
v is from 0 to 1.0, t is from 0 to 3.0, y is non-zero and up to and including 0.32, x is non-zero and up to and including 0.32, and z is from 2.5 to 4, provided that x+y≤0.33.