Disclosed is a method for synthesizing two-dimensional (2D) silicon carbide and other materials. The method includes the use of hexagonal SiC precursor in a wet exfoliation technique. The method may also include synthesizing two-dimensional (2D) silicon carbide by a chemical vapor deposition method, or a combination of a liquid exfoliation technique and a chemical vapor deposition method.

A porous membrane comprising stacked layers of nanosheets, each nanosheet comprising one to three atomic layers of a 2D material comprising or consisting of one or more transition metal dichalcogenides is provided. The nanosheets have pores and the membrane comprises a network of water permeation pathways including through-pathways formed by the pores, horizontal pathways formed by gaps between the layers, and vertical pathways formed by gaps between adjacent nanosheets and stacking defects between the layers. Also provided is a method for making the membrane.

The present embodiments relate to a method for manufacturing a two-dimensional material using a top-down method, the method includes the steps of preparing a bulk crystal, forming a metal layer on the bulk crystal, and then attaching a thermal release tape on the metal layer, exfoliating a two-dimensional material to which the metal layer and the thermal release tape have been attached from the bulk crystal, transferring the two-dimensional material to which the metal layer and the thermal release tape have been attached onto a substrate, and removing the thermal release tape and the metal layer from the substrate onto which the two-dimensional material has been transferred.

A method for preparing a γ-Ga.sub.2O.sub.3 nanomaterial, comprising a step of treating a mixture comprising a gallium element, water, and an organic solvent with ultrasound. The preparation process and equipment requirements are simple, the cost of materials is low, there are fewer experimental parameters, and experimental conditions are mild, with no additional heat source and/or pressure being applied. The γ-Ga.sub.2O.sub.3 nanomaterial can be prepared, in kilograms or above, quickly at an ambient temperature and pressure.

The present invention relates to the field of electrode material of a low temperature resistant supercapacitor, and in particular to a nickel foam-supported defective tricobalt tetroxide nanomaterial, a low temperature resistant supercapacitor and a preparation method thereof. The method includes the following steps: dissolving cobalt acetate in an ethylene glycol solution and stirring uniformly to obtain a pink transparent solution; adding hexadecyl trimethyl ammonium bromide to the pink transparent solution, and stirring until the hexadecyl trimethyl ammonium bromide dissolves to obtain a mixed solution; putting the mixed solution into a teflon-lined reactor, adding pretreated nickel foam for hydrothermal reaction, taking out the nickel foam after the reaction is completed, and ultrasonic cleaning the nickel foam repeatedly before drying; and heat-treating the nickel foam obtained after drying. The defective tricobalt tetroxide (D-Co.sub.3O.sub.4) grown on the nickel foam prepared by the present invention still has a high specific capacity at a low temperature, and the assembled supercapacitor can withstand low temperature, and thus has great application prospects.

A method for increasing the specific surface area of titanium phosphate plate-shaped particles of this invention includes: obtaining a liquid in a state where a powder containing titanium phosphate plate-shaped particles is dispersed in an aqueous alkaline solution.

A process for producing a material in the form of nanosheets by ball milling of crystals of the material, wherein the ball milling takes place in the presence of a reactive gas.

The present invention provides a two-dimensional material nanosheets with a large area and a controllable thickness and a general preparation method therefor. As an intralayer heat transfer coefficient of a two-dimensional material is much higher than an interlayer heat transfer coefficient thereof, the two-dimensional material is uniformly heated and sublimated layer by layer by controlling the energy of the laser pulses, a thinning thickness is controlled by adjusting the action time of the laser pulses, and finally, a two-dimensional material film with a controllable thickness is obtained. At the same time, a sample displacement stage moving freely in a two-dimensional plane space can realize preparation of the two-dimensional material film with a large area. Compared with traditional methods, the present invention can control a sample thickness of the two-dimensional material film, has a high generality, and is suitable for all kinds two-dimensional materials.

A water-based graphene dispersion is made by shear stabilization. The method of preparing the water-based graphene dispersion using shear stabilization includes adding a composition containing a graphene powder, a super wetter surfactant and a water dispersible rheology agent into water to form an aqueous mixture; and shearing the aqueous mixture under high pressures to break down the thick layers of the graphene powder to thin layers of graphene platelet particles and to form the water-based graphene dispersion with the graphene platelet particles dispersed in the water-based graphene dispersion. The water-based graphene dispersion is stable without visible phase separation after storage at room temperature for at least one year or even more than one year.

Methods for making nanocomposites are provided. In an embodiment, such a method comprises combining a first type of nanostructure with a bulk material in water or an aqueous solution, the first type of nanostructure functionalized with a functional group capable of undergoing van der Waals interactions with the bulk material, whereby the first type of nanostructure induces exfoliation of the bulk material to provide a second, different type of nanostructure while inducing association between the first and second types of nanostructures to form the nanocomposite.