A method of forming an optical fiber preform includes the steps: igniting a burner having a fume tube assembly to produce a first spray size of silicon dioxide particles; depositing the silicon dioxide particles on a core cane to produce a soot blank; and adjusting an effective diameter of an aperture of the fume tube assembly to produce a second spray size of the silicon dioxide particles. The second spray size is larger than the first spray size.

A glass substrate for a high-frequency device, which contains SiO.sub.2 as a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by Na.sub.2O/(Na.sub.2O+K.sub.2O) in the range of 0.01-0.99, and the glass substrate having a total content of alkaline earth metal oxides in the range of 0.1-13% in terms of mole percent on the basis of oxides, wherein at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

There is provided a method of processing an oxygen-containing workpiece. The method of processing an oxygen-containing workpiece includes controlling a fluorine concentration in the oxygen-containing workpiece based on at least one of a kind of a fluorine-containing processing gas, a processing temperature and a processing pressure used for processing the oxygen-containing workpiece.

A method for preparing quartz glass with low content of hydroxyl and high purity, includes providing silica powders including hydroxyl groups. The silica powders are dehydroxylated, which includes drying the silica powders at a first temperature, heating the silica powders up to a second temperature and introducing a first oxidizing gas including halogen gas, thereby obtaining first dehydroxylated powders, and heating the first dehydroxylated powders up to a third temperature and introducing a second oxidizing gas including oxygen or ozone, thereby obtaining second dehydroxylated powders. The second dehydroxylated powders are heated up to a fourth temperature to obtain a vitrified body. The vitrified body is cooled to obtain the quartz glass with low content of hydroxyl and high purity. The quartz glass prepared by the above method has low content of hydroxyl and high purity. A quartz glass with low content of hydroxyl and high purity is also provided.

A method for preparing quartz glass with low content of hydroxyl and high purity, includes providing silica powders including hydroxyl groups. The silica powders are dehydroxylated, which includes drying the silica powders at a first temperature, heating the silica powders up to a second temperature and introducing a first oxidizing gas including halogen gas, thereby obtaining first dehydroxylated powders, and heating the first dehydroxylated powders up to a third temperature and introducing a second oxidizing gas including oxygen or ozone, thereby obtaining second dehydroxylated powders. The second dehydroxylated powders are heated up to a fourth temperature to obtain a vitrified body. The vitrified body is cooled to obtain the quartz glass with low content of hydroxyl and high purity. The quartz glass prepared by the above method has low content of hydroxyl and high purity. A quartz glass with low content of hydroxyl and high purity is also provided.

A method of manufacturing synthetic quartz glass through an outside vapor deposition (OVD) process with improved deposition efficiency. When a hollow cylindrical synthetic quartz glass product is manufactured through an OVD method or the like, it is environmentally friendly in view of using a smaller amount of chlorine and is economical in view of requiring no separate treatment equipment, as compared to a conventional technique using silicon chloride (SiCl.sub.4). Also, the method, in which octamethylcyclotetrasiloxane is supplied to a deposition burner while being sprayed in the form of a droplet along with a high-pressure carrier gas and vaporized by the deposition burner, can effectively address the high-temperature heating and slow decomposition involved when octamethylcyclotetrasiloxane ([(CH.sub.3).sub.2SiO].sub.4) is used as a source for depositing silicon dioxide particles.

A method of forming an optical element is provided. The method includes producing silica-based soot particles using chemical vapor deposition, the silica-based soot particles having an average particle size of between about 0.05 μm and about 0.25 μm. The method also includes forming a soot compact from the silica-based soot particles and doping the soot compact with a halogen in a closed system by contacting the silica-based soot compact with a halogencontaining gas in the closed system at a temperature of less than about 1200° C.

An optical component made of synthetic quartz glass includes a glass structure substantially free of oxygen defect sites and having a hydrogen content of 0.1×10.sup.16 to 1.0×10.sup.18 molecules/cm.sup.3, an SiH group content of less than 2×10.sup.17 molecules/cm.sup.3, a hydroxyl group content of 0.1 to 100 wt. ppm, and an Active temperature of less than 1070° C. The optical component undergoes a laser-induced change in the refractive index in response to irradiation by a radiation with a wavelength of 193 nm using 5×10.sup.9 pulses with a pulse width of 125 ns and a respective energy density of 500 μJ/cm.sup.2 at a pulse repetition frequency of 2000 Hz. The change totals a first measured value M.sub.193 nm when measured using the applied wavelength of 193 nm and a second measured value M.sub.633 nm when measured using a measured wavelength of 633 nm. The ratio M.sub.193 nm/M.sub.633 nm is less than 1.7.

A method for the production of synthetic quartz glass using a special cleaning device is provided. The method includes (a) evaporating a production material containing a polymerizable polyalkylsiloxane compound while forming a production material vapor, (b) passing the production material vapor resulting from step (a) through a cleaning device to purify the production material vapor, (c) supplying the purified production material vapor resulting from step (b) to a reaction zone in which the purified production material vapor is converted to SiO.sub.2 particles through oxidation and/or through hydrolysis, (d) depositing the SiO.sub.2 particles resulting from step (c) on a deposition surface, and optionally drying and vitrifying the deposited SiO.sub.2 particles resulting from step (d) to form synthetic quartz glass. The cleaning device includes a bulk of porous silica particles which have a BET specific surface area of at least 2 m.sup.2/g. A device for carrying out the method is also provided.

An apparatus for the continuous production of hollow quartz-glass ingots, comprising a) a crucible or refractory tank for providing a softened quartz-glass mass having a dieorifice in the bottom of the crucible or refractory tank; b) a mandrel vertically drawing off the softened quartz-glass mass through a die toprovide a hollow quartz-glass ingot; and c) a cutting section for on-line cutting of the hollow quartz-glass ingot to a specificlength, characterized in that the apparatus comprises active means for cooling the internalsurface of the hollow quartz-glass ingot prior to the cutting station.