The invention relates to a film comprising an interpenetrating network, its uses and processes for making the same. The film produced displays good durability, chemical resistance and transparency. The film is produced from an interpenetrating network formed as a colloidal suspension in an organic solvent and a particulate solid.

A mixed composition of a compound (A1) represented by formula (a1), an organosilicon compound (B) represented by formula (b1), and an organosilicon compound (C) represented by formula (c1), wherein the mass ratio [A1/(B+C)] of the compound (A1) to the total amount of the organosilicon compound (B) and the organosilicon compound (C) is 0.060 or more.

Provided is a surface treatment agent including an alkoxysilane compound having a cyclic silazane structure represented by the following general formula (1): ##STR00001##
wherein R.sup.1 represents an unsubstituted linear alkyl group having 6 to 20 carbon atoms, R.sup.2 represents a substituted or unsubstituted alkylene group having 3 to 6 carbon atoms that may include a heteroatom, R.sup.3 and R.sup.4 each independently represent a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, and n represents an integer of 0 or 1.

A property-enhanced cover sheet, and methods for forming a property-enhanced cover sheet, for a portable electronic device are disclosed. A property-enhanced cover sheet is formed by thermoforming a glass sheet into a specified contour shape while modifying one or more properties of the glass. Other property-enhanced sheets can be formed by layering two or more glass sheets having different material properties, and then thermoforming the layered sheets into a required contour shape. Property enhancement for a cover sheet includes, hardness, scratch resistance, strength, elasticity, texture and the like.

A surface coating material includes a plurality of fluorine-containing silicon compounds and an additive. The fluorine-containing silicon compounds include a fluorine-containing (poly)ether moiety, a hydrolytic silane moiety, and a linking group between the fluorine-containing (poly)ether moiety and the hydrolytic silane moiety. The linking group is configured to form a non-covalence interaction between adjacent molecules.

Due to the increased glazed area of modern vehicles, especially the large panoramic glass roofs, we have seen a substantial growth in the use of anti-reflective coatings. Unfortunately, these types of coatings accentuate fingerprints and smudges. The invention provides an automotive glazing which is substantially resistant to fingerprints, and a method of manufacture thereof through the application of an anti-fingerprint coating based on low surface energy silanes.

A system includes a processor and a memory storing instructions executable by the processor to actuate a component upon determining that a hydrophobic coating of a surface is degraded based on a comparison of a characteristic of a liquid droplet with a threshold value.

A silicone coating is provided for glass and other surfaces with improved glass clarity and maintenance requirements. In addition, a process for preparing a film with improved glass clarity and maintenance requirements. Further a method is provided for adhering an improved coating to a glass (or other) surface. Also a silicone coating is provided for granite, cement, and lexan/plastic.

A cover member according to the present invention includes a transparent substrate that has a first main surface and a second main surface and a transparent first functional layer that is layered on the first main surface of the substrate.

In an embodiment, a method of forming a semiconductor device includes forming a hydrophobic coating on an inner surface of an exhaust line, connecting the exhaust line to a semiconductor processing chamber, introducing a first precursor into the semiconductor processing chamber, introducing a second precursor into the semiconductor processing chamber, wherein the first precursor reacts with the second precursor to form a layer of oxide material, and pumping the first precursor and the second precursor from the semiconductor processing chamber and through the exhaust line.