Strengthened glass articles formed from a glass composition comprising less than 1.0 mol % R.sub.2O, where R is an alkali ion, are disclosed. In various embodiments, the glass articles have a dielectric constant of less than 6.25 and a dielectric loss tangent of less than 0.01 at 30 GHz. Electronic devices, such as consumer electronic products, including the strengthened glass articles, as well as methods of making the strengthened glass articles are also disclosed.

Strengthened glass articles formed from a glass composition comprising less than 1.0 mol % R.sub.2O, where R is an alkali ion, are disclosed. In various embodiments, the glass articles have a dielectric constant of less than 6.25 and a dielectric loss tangent of less than 0.01 at 30 GHz. Electronic devices, such as consumer electronic products, including the strengthened glass articles, as well as methods of making the strengthened glass articles are also disclosed.

A glass substrate for a high-frequency device, which contains SiO.sub.2 as a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by Na.sub.2O/(Na.sub.2O+K.sub.2O) in the range of 0.01-0.99, and the glass substrate having a total content of alkaline earth metal oxides in the range of 0.1-13% in terms of mole percent on the basis of oxides, wherein at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

A glass substrate for a high-frequency device, which contains SiO.sub.2 as a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by Na.sub.2O/(Na.sub.2O+K.sub.2O) in the range of 0.01-0.99, and the glass substrate having a total content of alkaline earth metal oxides in the range of 0.1-13% in terms of mole percent on the basis of oxides, wherein at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

The present invention relates to a silica glass including bublles in the number of 1×10.sup.7/cm.sup.3 to 1×10.sup.15/cm.sup.3 and having a density of 0.5 g/cm.sup.3 to 1.95 g/cm.sup.3. The present invention also relates to a method for producing a silica glass, including: a step of depositing SiO.sub.2 fine particles generated by flame hydrolysis of a silicon compound, to obtain a silica glass porous body; a step of heating and sintering the silica glass porous body in an inert gas atmosphere, to obtain a silica glass dense body; and a step of performing a foaming treatment to heat the silica glass dense body under a reduced pressure condition.

ZrO.sub.2-toughened glass ceramics having high molar fractions of tetragonal ZrO.sub.2 and fracture toughness value of greater than 1.8 MPa.Math.m.sup.1/2. The glass ceramic may also include also contain other secondary phases, including lithium silicates, that may be beneficial for toughening or for strengthening through an ion exchange process. Additional second phases may also decrease the coefficient of thermal expansion of the glass ceramic. A method of making such glass ceramics is also provided.

ZrO.sub.2-toughened glass ceramics having high molar fractions of tetragonal ZrO.sub.2 and fracture toughness value of greater than 1.8 MPa.Math.m.sup.1/2. The glass ceramic may also include also contain other secondary phases, including lithium silicates, that may be beneficial for toughening or for strengthening through an ion exchange process. Additional second phases may also decrease the coefficient of thermal expansion of the glass ceramic. A method of making such glass ceramics is also provided.

Provided is a glass substrate with which it is possible to reduce dielectric loss in high-frequency signals, and which also has excellent thermal shock resistance. This invention satisfies the relation {Young's modulus (GPa)×average thermal expansion coefficient (ppm/° C.) at 50-350° C.}≤300 (GPa.Math.ppm/° C.), wherein the relative dielectric constant at 20° C. and 35 GHz does not exceed 10, and the dielectric dissipation factor at 20° C. and 35 GHz does not exceed 0.006.

It is demanded that a LTCC substrate composition capable of maintaining low relative permittivity k and high Q value without having a reactivity with a silver which is an electrode material and causing migration of the silver during a co-firing operation at a low temperature. Provided with a low temperature co-fired substrate composition containing 83 to 91 wt. % of CaO-B.sub.2O.sub.3-SiO.sub.2 based glass powder, 7.5 to 14 wt. % of two or more kinds of nanometer-sized SiO.sub.2 powders having different ranges of particle diameter and 1.5 to 3 wt. % of β-wollastonite powder as a crystallization agent wherein the glass powder contains 40.0 to 45.0 wt. % of CaO, 9.0 to 20.0 wt. % of B.sub.2O.sub.3 and 40.0 to 46.0 wt. % of SiO.sub.2.

It is demanded that a LTCC substrate composition capable of maintaining low relative permittivity k and high Q value without having a reactivity with a silver which is an electrode material and causing migration of the silver during a co-firing operation at a low temperature. Provided with a low temperature co-fired substrate composition containing 83 to 91 wt. % of CaO-B.sub.2O.sub.3-SiO.sub.2 based glass powder, 7.5 to 14 wt. % of two or more kinds of nanometer-sized SiO.sub.2 powders having different ranges of particle diameter and 1.5 to 3 wt. % of β-wollastonite powder as a crystallization agent wherein the glass powder contains 40.0 to 45.0 wt. % of CaO, 9.0 to 20.0 wt. % of B.sub.2O.sub.3 and 40.0 to 46.0 wt. % of SiO.sub.2.