C03C8/24

Sealed devices comprising transparent laser weld regions

Disclosed herein are sealed devices comprising a first substrate, a second substrate, an inorganic film between the first and second substrates, and at least one weld region comprising a bond between the first and second substrates. The weld region can comprise a chemical composition different from that of the inorganic film and the first or second substrates. The sealed devices may further comprise a stress region encompassing at least the weld region, in which a portion of the device is under a greater stress than the remaining portion of the device. Also disclosed herein are display and electronic components comprising such sealed devices.

Sealed devices comprising transparent laser weld regions

Disclosed herein are sealed devices comprising a first substrate, a second substrate, an inorganic film between the first and second substrates, and at least one weld region comprising a bond between the first and second substrates. The weld region can comprise a chemical composition different from that of the inorganic film and the first or second substrates. The sealed devices may further comprise a stress region encompassing at least the weld region, in which a portion of the device is under a greater stress than the remaining portion of the device. Also disclosed herein are display and electronic components comprising such sealed devices.

FUEL CELL STACKS INCLUDING IMPROVED DIELECTRIC LAYERS

A fuel cell stack includes stacked solid oxide fuel cells, interconnects disposed between the fuel cells, and dielectric layers disposed on the interconnects and including a first glass-containing component and a corrosion barrier material. Optionally, the dielectric layers may cover only a portion of the interconnect riser seal surfaces which are covered by riser seals. Additionally or alternatively, the fuel cell stack may include an electrolyte reinforcement layer on the electrolyte of the solid oxide fuel cells.

Ultra low melting glass frit and fibers

Disclosed herein are methods for forming low melting point glass fibers comprising providing a glass feedstock comprising a low melting point glass and melt-spinning the glass feedstock to produce glass fibers, wherein the glass transition temperature of the glass fibers is less than or equal to about 120% of the glass transition temperature of the glass feedstock. The disclosure also relates to method for forming low melting point glass frit further comprising jet-milling the glass fibers. Low melting point glass frit and fibers produced by the methods described above are also disclosed herein.

Ultra low melting glass frit and fibers

Disclosed herein are methods for forming low melting point glass fibers comprising providing a glass feedstock comprising a low melting point glass and melt-spinning the glass feedstock to produce glass fibers, wherein the glass transition temperature of the glass fibers is less than or equal to about 120% of the glass transition temperature of the glass feedstock. The disclosure also relates to method for forming low melting point glass frit further comprising jet-milling the glass fibers. Low melting point glass frit and fibers produced by the methods described above are also disclosed herein.

TRIPLE PANE VACUUM INSULATED GLASS UNIT

Method for the production of a vacuum insulated glazing unit with more than two panes and a vacuum insulated glazing unit with more than two panes. In one example a triple pane vacuum insulated glazing assembly is fused and the cavity is backfilled during cooling whereby the centre pane temperature may be lowered. This has the advantage of keeping the stresses below the failure boundaries and enabling faster production.

TRIPLE PANE VACUUM INSULATED GLASS UNIT

Method for the production of a vacuum insulated glazing unit with more than two panes and a vacuum insulated glazing unit with more than two panes. In one example a triple pane vacuum insulated glazing assembly is fused and the cavity is backfilled during cooling whereby the centre pane temperature may be lowered. This has the advantage of keeping the stresses below the failure boundaries and enabling faster production.

Sealing material and multilayered glass panel using same

The present invention provides a highly reliable multilayered glass panel and an encapsulating material for achieving the highly reliable multilayered glass panel. The encapsulating material includes lead-free low melting glass particles containing vanadium oxide and tellurium oxide, low thermal expansion filler particles, and glass beads as a solid content. A volume fraction of the glass beads in the solid content is not less than 10% to not more than 35%, and a volume fraction of the lead-free low melting glass particles in the solid content is larger than a volume fraction of the low thermal expansion filler in the solid content.

Sealing material and multilayered glass panel using same

The present invention provides a highly reliable multilayered glass panel and an encapsulating material for achieving the highly reliable multilayered glass panel. The encapsulating material includes lead-free low melting glass particles containing vanadium oxide and tellurium oxide, low thermal expansion filler particles, and glass beads as a solid content. A volume fraction of the glass beads in the solid content is not less than 10% to not more than 35%, and a volume fraction of the lead-free low melting glass particles in the solid content is larger than a volume fraction of the low thermal expansion filler in the solid content.

COMPOSITION, PASTE AND METHODS

Disclosed is a composition for sealing inorganic substrates. The composition includes a glass frit and optionally a filler material, wherein the glass frit contains: 30 to 65 wt % V.sub.2O.sub.5; 5 to 35 wt % P.sub.2O.sub.5; 0 to 30 wt % TeO.sub.2; 0 to 30 wt % Bi.sub.2O.sub.3; 0 to 15 wt % ZnO; 0 to 10 wt % MnO; 0 to 5 wt % B.sub.2O.sub.3; 0 to 5 wt % total alkali metal oxides; 0 to 2 wt % Nb.sub.2O.sub.5; 0 to 2 wt % WO.sub.3; 0 to 2 wt % MoO.sub.3; 0 to 2 wt % SiO.sub.2; and 0 to 2 wt % Al.sub.2O.sub.3.