Patent classifications
C04B2235/3208
TILES OR SLABS OF COMPACTED CERAMIC MATERIAL
The disclosure relates to tiles or slabs comprising a fired ceramic material which has a chemical composition with a particular combination of oxides; to a method for the manufacture of said tiles or slabs; and to the use thereof for construction or decoration applications.
HEAT-RESISTANT MEMBER
A heat-resistant member (1) according to the present disclosure contains alumina as a main component, and magnesium aluminate and boron. The content percentage of the magnesium aluminate at the surface is higher than the content percentage of the magnesium aluminate in a surface layer section located directly below the surface.
PROCESS FOR THE PREPARATION OF A DENTAL RESTORATION
The invention relates to a process for the preparation of a dental restoration, in which an oxide ceramic material is (a) subjected to at least one heat treatment, and (b) cooled, wherein the cooling comprises (b1) a first cooling step with the cooling rate T1 and (b2) a second cooling step with the cooling rate T2 and wherein the absolute value of the cooling rate T2 is less than the absolute value of the cooling rate T1.
DIELECTRIC COMPOSITION AND MULTILAYER CERAMIC CAPACITOR
A dielectric composition that contains a first complex oxide represented by (Bi.sub.xNa.sub.1−x)TiO.sub.3—CaTiO.sub.3 and having a perovskite structure as a main component; and at least one second complex oxide having a perovskite structure selected from the group consisting of BaZrO.sub.3, SrZrO.sub.3, CaZrO.sub.3, NaNbO.sub.3, and NaTaO.sub.3 as an auxiliary component. A tolerance factor t when the at least one second complex oxide is BaZrO.sub.3, NaNbO.sub.3, or NaTaO.sub.3 is 0.9016≤t≤0.9035, a tolerance factor t when the at least one second complex oxide is SrZrO.sub.3 is 0.9005≤t≤0.9025, and a tolerance factor t when the at least one second complex oxide is CaZrO.sub.3 is 0.9000 t<0.9020.
CERAMIC ELECTRONIC DEVICE, DIELECTRIC MATERIAL, AND MANUFACTURING METHOD OF CERAMIC ELECTRONIC DEVICE
A ceramic electronic device includes a dielectric layer and an internal electrode layer that are alternately stacked, wherein the dielectric layer contains yttria-stabilized zirconia and (Ca.sub.x1Ba.sub.x2Sr.sub.1-x1-x2)(Ti.sub.yZr.sub.1-y)O.sub.3 (0.6≤x1≤0.9, 0≤x2≤0.1, 0≤y≤0.1) as a main component, and wherein, in the dielectric layer, a concentration of the yttria-stabilized zirconia when a total amount of Ti and Zr is 100 mol % is 0.5 mol % or more and 5.0 mol % or less.
MULTILAYER CERAMIC CAPACITOR AND METHOD FOR PRODUCING THE SAME
A multilayer ceramic capacitor includes a multilayer body including dielectric layers, inner-electrode layers, and outer electrodes coupled to the inner-electrode layers. The multilayer body includes Ba, Ti, Ca, Mg, Zr, and R, and when the Ti content is defined as 100 parts by mole, the relative amounts are as follows: Ca, 0.03 parts by mole or more and 0.15 parts by mole or less, Mg, 0.01 parts by mole or more and 0.09 parts by mole or less, R, 2.5 parts by mole or more and 8.4 parts by mole or less; Zr, 0.05 parts by mole or more and 3.00 parts by mole or less: Si, 0.5 parts by mole or more and 4.0 parts by mole or less; and P, 0.005 parts by mole or more and 0.500 parts by mole or less. Ca is in a vicinity of the center of crystal grains contained in the dielectric layers.
Ceramic electronic component comprising dielectric grains having a core-dual shell structure and method of manufacturing the same
A ceramic electronic component includes a body, including a dielectric layer and an internal electrode. The dielectric layer includes a plurality of dielectric grains, and at least one of the plurality of dielectric grains has a core-dual shell structure having a core and a dual shell. The dual shell includes a first shell, surrounding at least a portion of the core, and a second shell, surrounding at least a portion of the first shell. The dual shell includes different types of rare earth elements R1 and R2, and R2.sub.S1/R1.sub.S1 is 0.01 or less and R2.sub.S2/R1.sub.S1 is 0.5 to 3.0, where R1.sub.S1 and R1.sub.S2 denote concentrations of R1 included in the first shell and the second shell, respectively, and R2.sub.S1 and R2.sub.S2 denote concentrations of R2 included in the first shell and the second shell, respectively.
Dense sintered product
Sintered product having a relative density of greater than 90%, with, to more than 80% of the volume thereof, a stack of flat ceramic platelets, the assembly of the platelets having a mean thickness of less than 3 μm, having a width of greater than 50 mm, and including more than 20% of alumina, as a percentage on the basis of the weight of the product. The width of the product is the largest dimension measured in the plane in which the length of the product is measured, along a direction perpendicular to the direction of the length. The length of the product is the largest dimension thereof in a plane parallel to the general plane in which the platelets extend.
Proppants and methods of making and use thereof
The present disclosure includes proppants and methods of making the proppants. The proppants herein may contain titanium dioxide, silicon dioxide, and/or aluminum dioxide. Also included in the present disclosure are methods of using the proppants to treat a reservoir.
Manganese-zinc Ferrite with High Magnetic Permeability at Negative Temperature and Low Loss at High Temperature and Method for Preparing Same
A manganese-zinc ferrite with a high magnetic permeability at negative temperature and low loss at high temperature consists of Fe.sub.2O.sub.3, MnO and ZnO, and additives consisting of CaCO.sub.3, ZrO.sub.2, Co.sub.2O.sub.3 and SnO.sub.2 are also added. A method for preparing the manganese-zinc ferrite is further provided. According to the method, by reasonably adjusting a ratio of Mn to Zn to Fe and appropriately increasing the content of Co in the additives, a manganese-zinc ferrite material with both a high magnetic permeability and low loss at about −20° C. and low loss at 120-140° C. is obtained. The manganese-zinc ferrite material has two loss valleys at about −20° C. and about 100° C. in a temperature range of −30° C. to 140° C., which expands the application range of the manganese-zinc ferrite material.