C04B2235/3224

METHODS AND APPARATUS FOR PLASMA SPRAYING SILICON CARBIDE COATINGS FOR SEMICONDUCTOR CHAMBER APPLICATIONS

Methods and apparatus for producing bulk silicon carbide and producing silicon carbide coatings are provided herein. The method includes feeding a mixture of silicon carbide and ceramic into a plasma sprayer. The plasma generates a stream towards a substrate forming a bulk material or optionally a coating on the substrate such as an article upon contact therewith. In embodiments, the substrate can be removed, leaving a component part fabricated from bulk silicon carbide.

PROCESS FOR THE PREPARATION OF A DENTAL RESTORATION

The invention relates to a process for the preparation of a dental restoration, in which an oxide ceramic material is (a) subjected to at least one heat treatment, and (b) cooled, wherein the cooling comprises (b1) a first cooling step with the cooling rate T1 and (b2) a second cooling step with the cooling rate T2 and wherein the absolute value of the cooling rate T2 is less than the absolute value of the cooling rate T1.

MULTILAYER CERAMIC CAPACITOR AND METHOD FOR PRODUCING THE SAME
20230046574 · 2023-02-16 ·

A multilayer ceramic capacitor includes a multilayer body including dielectric layers, inner-electrode layers, and outer electrodes coupled to the inner-electrode layers. The multilayer body includes Ba, Ti, Ca, Mg, Zr, and R, and when the Ti content is defined as 100 parts by mole, the relative amounts are as follows: Ca, 0.03 parts by mole or more and 0.15 parts by mole or less, Mg, 0.01 parts by mole or more and 0.09 parts by mole or less, R, 2.5 parts by mole or more and 8.4 parts by mole or less; Zr, 0.05 parts by mole or more and 3.00 parts by mole or less: Si, 0.5 parts by mole or more and 4.0 parts by mole or less; and P, 0.005 parts by mole or more and 0.500 parts by mole or less. Ca is in a vicinity of the center of crystal grains contained in the dielectric layers.

Ceramic electronic component comprising dielectric grains having a core-dual shell structure and method of manufacturing the same

A ceramic electronic component includes a body, including a dielectric layer and an internal electrode. The dielectric layer includes a plurality of dielectric grains, and at least one of the plurality of dielectric grains has a core-dual shell structure having a core and a dual shell. The dual shell includes a first shell, surrounding at least a portion of the core, and a second shell, surrounding at least a portion of the first shell. The dual shell includes different types of rare earth elements R1 and R2, and R2.sub.S1/R1.sub.S1 is 0.01 or less and R2.sub.S2/R1.sub.S1 is 0.5 to 3.0, where R1.sub.S1 and R1.sub.S2 denote concentrations of R1 included in the first shell and the second shell, respectively, and R2.sub.S1 and R2.sub.S2 denote concentrations of R2 included in the first shell and the second shell, respectively.

Multilayer ceramic capacitor and manufacturing method for same

A multilayer ceramic capacitor (10) has a laminate body (20) constituted by dielectric layers (17) and internal electrode layers (18) stacked alternately. The dielectric layers (17) contain (Ba.sub.(1-x-y)Ca.sub.xSr.sub.y).sub.m(Ti.sub.(1-z)Zr.sub.z)O.sub.3, where 0.03≤x≤0.16, 0≤y≤0.02, 0<z≤0.02, 0.99≤m≤1.02, as a primary component, and an R oxide (R is a rare earth element) by 1.0 to 4.0 mol in equivalent element, an Mg compound by 0.2 to 2.5 mol in equivalent element, an Mn compound by 0.1 to 1.0 mol in equivalent element, a Zr compound by 0.1 to 2.0 mol in equivalent element, a V compound by 0.05 to 0.3 mol in equivalent element, and an Si compound by 0.2 to 5.0 mol in equivalent element, per 100 mol of the primary component. The multilayer ceramic capacitor can offer excellent DC bias properties and ensure high reliability.

DIELECTRIC CERAMIC COMPOSITION AND CAPACITOR COMPONENT

A capacitor component includes: a body including a dielectric layer and an internal electrode layer; and an external electrode disposed on the body, and connected to the internal electrode layer. A surface color of the body is R≤30, G≤30, B≤40 based on R/G/B, and a dielectric constant of the dielectric layer is 2000 or more and 4000 or less.

Process for rapid processing of SiC and graphitic matrix triso-bearing pebble fuels
11557403 · 2023-01-17 · ·

A method for producing microencapsulated fuel pebble fuel more rapidly and with a matrix that engenders added safety attributes. The method includes coating fuel particles with ceramic powder; placing the coated fuel particles in a first die; applying a first current and a first pressure to the first die so as to form a fuel pebble by direct current sintering. The method may further include removing the fuel pebble from the first die and placing the fuel pebble within a bed of non-fueled matrix ceramic in a second die; and applying a second current and a second pressure to the second die so as to form a composite fuel pebble.

CERAMIC MATERIAL, METHOD FOR PRODUCING THE CERAMIC MATERIAL, AND ELECTROCERAMIC COMPONENT COMPRISING THE CERAMIC MATERIAL
20180006210 · 2018-01-04 ·

The invention relates to a ceramic material, comprising lead zirconate titanate, which additionally contains K and optionally Cu. The ceramic material can be used in an electroceramic component, for example a piezoelectric actuator. The invention also relates to methods for producing the ceramic material and the electronic component.

HIGH THERMAL CONDUCTIVE SILICON NITRIDE SINTERED BODY, AND SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD AND SEMICONDUCTOR APPARATUS USING THE SAME

The present invention provides a high thermal conductive silicon nitride sintered body having a thermal conductivity of 50 W/m.Math.K or more and a three-point bending strength of 600 MPa or more, wherein when an arbitrary cross section of the silicon nitride sintered body is subjected to XRD analysis and highest peak intensities detected at diffraction angles of 29.3±0.2°, 29.7±0.2°, 27.0±0.2°, and 36.1±0.2° are expressed as I.sub.29.3°, I.sub.29.7°, I.sub.27.0°, and I.sub.36.1°, a peak ratio (I.sub.29.3°)/(I.sub.27.0°+I.sub.36.1°) satisfies a range of 0.01 to 0.08, and a peak ratio (I.sub.29.7°)/(I.sub.27.0°+I.sub.36.1°) satisfies a range of 0.02 to 0.16. Due to above configuration, there can be provided a silicon nitride sintered body having a high thermal conductivity of 50 W/m.Math.K or more, and excellence in insulating properties and strength.

SCINTILLATION CRYSTAL, A RADIATION DETECTION SYSTEM INCLUDING THE SCINTILLATION CRYSTAL, AND A METHOD OF USING THE RADIATION DETECTION SYSTEM
20180010041 · 2018-01-11 ·

A scintillation crystal can include Ln.sub.(1-y)RE.sub.yX.sub.3, wherein Ln represents a rare earth element, RE represents a different rare earth element, y has a value in a range of 0 to 1, and X represents a halogen. In an embodiment, RE is Ce, and the scintillation crystal is doped with Sr, Ba, or a mixture thereof at a concentration of at least approximately 0.0002 wt. %. In another embodiment, the scintillation crystal can have unexpectedly improved linearity and unexpectedly improved energy resolution properties. In a further embodiment, a radiation detection system can include the scintillation crystal, a photosensor, and an electronics device. Such a radiation detection system can be useful in a variety of radiation imaging applications.