C04B2235/3225

Ceramic material, varistor, and method for producing the ceramic material and the varistor

In an embodiment a ceramic material includes ZnO as main constituent, Y as a first additive, second additives including at least one compound containing a metal element, wherein the metal element is selected from the group consisting of Bi, Cr, Co, Mn, Ni and Sb, Si.sup.4+ as a first dopant and second dopants having at least one compound containing a metal cation from Al.sup.3+, B.sup.3+, or Ba.sup.2+, wherein a corresponds to a molar proportion of Bi calculated as Bi.sub.2O.sub.3, b corresponds to a molar proportion of Y calculated as Y.sub.2O.sub.3, c corresponds to a molar proportion of Al calculated as Al.sub.2O.sub.3, d corresponds to a molar proportion of Ba calculated as BaO, e corresponds to a molar proportion of B calculated as B.sub.2O.sub.3, f corresponds to a molar proportion of Si calculated as SiO.sub.2, g corresponds to a molar proportion of Ni calculated as NiO, h corresponds to a molar proportion of Co calculated as Co.sub.3O.sub.4, i corresponds to a molar proportion of Cr calculated as Cr.sub.2O.sub.3, j corresponds to a molar proportion of Sb calculated as Sb.sub.2O.sub.3, and k corresponds to a molar proportion of Mn calculated as Mn.sub.3O.sub.4.

ZIRCONIA COMPOSITION, ZIRCONIA SEMI-SINTERED BODY AND ZIRCONIA SINTERED BODY, AS WELL AS DENTAL PRODUCT
20180002235 · 2018-01-04 · ·

There are provided zirconia composition, zirconia semi-sintered body and zirconia sintered body, and dental product in which defect-generation is suppressed and transparency varies. The zirconia sintered body contains 4 mol % to 7 mol % of yttria as stabilizer. The zirconia sintered body contains shielding material. The zirconia sintered body comprises first region and second region having a higher content ratio of the shielding material than the first region. Difference between content ratio of yttria in the first region and that of yttria in the second region is 1 mol % or less.

HIGH THERMAL CONDUCTIVE SILICON NITRIDE SINTERED BODY, AND SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD AND SEMICONDUCTOR APPARATUS USING THE SAME

The present invention provides a high thermal conductive silicon nitride sintered body having a thermal conductivity of 50 W/m.Math.K or more and a three-point bending strength of 600 MPa or more, wherein when an arbitrary cross section of the silicon nitride sintered body is subjected to XRD analysis and highest peak intensities detected at diffraction angles of 29.3±0.2°, 29.7±0.2°, 27.0±0.2°, and 36.1±0.2° are expressed as I.sub.29.3°, I.sub.29.7°, I.sub.27.0°, and I.sub.36.1°, a peak ratio (I.sub.29.3°)/(I.sub.27.0°+I.sub.36.1°) satisfies a range of 0.01 to 0.08, and a peak ratio (I.sub.29.7°)/(I.sub.27.0°+I.sub.36.1°) satisfies a range of 0.02 to 0.16. Due to above configuration, there can be provided a silicon nitride sintered body having a high thermal conductivity of 50 W/m.Math.K or more, and excellence in insulating properties and strength.

POWDER MATERIAL FOR FORMING THREE-DIMENSIONAL OBJECT, MATERIAL SET FOR FORMING THREE-DIMENSIONAL OBJECT, METHOD FOR PRODUCING THREE-DIMENSIONAL OBJECT, THREE-DIMENSIONAL OBJECT PRODUCING APPARATUS, AND THREE-DIMENSIONAL OBJECT
20180000571 · 2018-01-04 ·

Provided is a powder material for forming a three-dimensional object, the powder material containing granulated particles containing: a resin; and inorganic particles of which primary particles have a volume average particle diameter of 1 micrometer or less, wherein the granulated particles have a volume average particle diameter of 10 micrometers or greater but 70 micrometers or less and a BET specific surface area of 6 m.sup.2/g or greater but 8 m.sup.2/g or less.

ION BEAM SPUTTERING WITH ION ASSISTED DEPOSITION FOR COATINGS ON CHAMBER COMPONENTS

An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide film is selected from a group consisting of an Er—Y composition, an Er—Al—Y composition, an Er—Y—Zr composition, and an Er—Al composition.

METHOD OF PRODUCING DIELECTRIC MATERIAL
20180009714 · 2018-01-11 ·

A method of producing a dielectric material by preparing a slurry by mixing a dielectric powder, water, one of an organic-acid metal salt and an inorganic metal salt, and an organic silicon compound, causing the slurry to come into contact with an anion exchange resin to remove an anion derived from the one of the organic-acid metal salt and the inorganic metal salt from the slurry, and drying the slurry to obtain the dielectric material.

ALUMINIUM AND ZIRCONIUM-BASED MIXED OXIDE

The present invention relates to a mixed oxide of aluminium, of zirconium, of cerium, of lanthanum and optionally of at least one rare-earth metal other than cerium and lanthanum that makes it possible to repair a catalyst that retains, after severe ageing, a good thermal stability and a good catalytic activity. The invention also relates to the process for preparing this mixed oxide and also to a process for treating exhaust gases from internal combustion engines using a catalyst prepared from this mixed oxide.

BINDER FOR INJECTION MOULDING COMPOSITION

A binder for an injection moulding composition, the binder includes, in percentage by mass and for a total of 100%: 35% to 60% of a component (a), or polymer base, made of a polymer or a mixture of polymers, each of the polymer being non-amphiphilic and having a mass average molar mass greater than or equal to 5,000 g/mol, 30% to 55% of a component (b), or wax, made of a polymer or a mixture of polymers, each of the polymer being non-amphiphilic and having a mass average molar mass less than 5,000 g/mol, and less than 10% of an amphiphilic component (c), or surfactant, and less than 10% of other components (d). The polymer base comprising 2% to 15% of a styrene-ethylene-butylene-styrene copolymer (SEBS), in percentage by mass based on the mass of the binder.

PROTON CONDUCTOR, ELECTROLYTE MEMBRANE, MEMBRANE ELECTRODE ASSEMBLY, ELECTROCHEMICAL CELL AND FUEL CELL STACK

A proton conductor of the present disclosure includes a compound represented by the chemical formula BaZr.sub.(1-x-y)Yb.sub.xSc.sub.yO.sub.3-δ. The chemical formula satisfies 0<x<0.5, 0 <y<0.5, (x+y)<0.5, and 0<δ<0.5.

Ion beam sputtering with ion assisted deposition for coatings on chamber components

An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide film consists essentially of 40 mol % to less than 100 mol % of Y.sub.2O.sub.3, over 0 mol % to 60 mol % of ZrO.sub.2, and 0 mol % to 9 mol % of Al.sub.2O.sub.3.