A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.

Herein is disclosed a method of producing a ceramic support suitable for a catalyst, the method comprising providing a porous ceramic structure, comprising a body portion with a monomodal macropore structure, wherein the macropores comprises a first mean pore size; washcoating the porous ceramic structure using a suspension comprising oxide and/or hydroxide nanoparticles and drying and calcinating the washcoated porous ceramic structure at a temperature below the melting point of the nanoparticles. In addition, the ceramic support and its structure is disclosed.

A solid electrolyte, in which a part of an element contained in a mobile ion-containing material is substituted, and an occupied impurity level that is occupied by electrons or an unoccupied impurity level that is not occupied by electrons is provided between a valence electron band and a conduction band of the mobile ion-containing material, and a smaller energy difference out of an energy difference between a highest level of energy in the occupied impurity level and an energy and a LUMO level difference between a lowest level of energy in the unoccupied impurity level and a HOMO level is greater than 0.3 eV.

The present invention relates to a ceramic solid electrolyte, which is a key component of an all-solid-state lithium secondary battery, for improving safety, and a method for synthesizing the same. The present invention relates to an oxide-based conductive ceramic of a new NASICON structure of the chemical formula Li.sub.1+xAl.sub.xX.sub.2−xP.sub.3O.sub.12 (X is Zr, Si, Sn, or Y, 0<x<2) or Li.sub.1+xZr.sub.2X.sub.xP.sub.3−xO.sub.12 (X=Si, Sn, Ge, or Y, 1.5≤x≤2.3). The present invention relates to a method for manufacturing an oxide-based conductive ceramic having the above novel NASICON structure.

Provided is a dielectric ceramic composition including a first component and a second component, wherein the first component comprises an oxide of Ca of 0.00 mol % to 35.85 mol % an oxide of Sr of 0.00 mol % to 47.12 mol %, an oxide of Ba of 0.00 mol % to 51.22 mol %, an oxide of Ti of 0.00 mol % to 17.36 mol %, an oxide of Zr of 0.00 mol % to 17.36 mol %, an oxide of Sn of 0.00 mol % to 2.60 mol %, an oxide of Nb of 0.00 mol % to 35.32 mol %, an oxide of Ta of 0.00 mol % to 35.32 mol %, and an oxide of V of 0.00 mol % to 2.65 mol %, and the second component includes at least (a) an oxide of Mn of 0.005% by mass to 3.500% by mass and (b) an oxide of Cu and/or an oxide of Ru.

A ceramic composition contains Fe, Cu, Ni, Zn, Co, and Cr. When Fe, Cu, Ni, and Zn are converted to Fe.sub.2O.sub.3, CuO, NiO, and ZnO, respectively, and when a total amount of Fe.sub.2O.sub.3, CuO, NiO, and ZnO is 100 parts by mole, the ceramic composition contains 45.00 to 49.70 parts by mole Fe in terms of Fe.sub.2O.sub.3, 2.00 to 8.00 parts by mole Cu in terms of CuO, 19.40 to 45.40 parts by mole Ni in terms of NiO, and 1.00 to 27.00 parts by mole Zn in terms of ZnO. When Fe, Cu, Ni, and Zn are converted to Fe.sub.2O.sub.3, CuO, NiO, and ZnO, respectively, and when a total amount of Fe.sub.2O.sub.3, CuO, NiO, and ZnO is 100 parts by weight, the ceramic composition contains 5 to 100 ppm Co in terms of CoO and 10 to 400 ppm Cr in terms of Cr.sub.2O.sub.3.

A ceramic composition contains Fe, Cu, Ni, Zn, Co, and Cr. When Fe, Cu, Ni, and Zn are converted to Fe.sub.2O.sub.3, CuO, NiO, and ZnO, respectively, and a total amount of Fe.sub.2O.sub.3, CuO, NiO, and ZnO is 100 parts by mole, the ceramic composition contains from 48.20 to 49.85 parts by mole Fe in terms of Fe.sub.2O.sub.3, from 2.00 parts to 8.00 parts by mole Cu in terms of CuO, from 11.90 to 18.70 parts by mole Ni in terms of NiO, and from 27.00 to 33.50 parts by mole Zn in terms of ZnO. When Fe, Cu, Ni, and Zn are converted to Fe.sub.2O.sub.3, CuO, NiO, and ZnO, respectively, and a total amount of Fe.sub.2O.sub.3, CuO, NiO, and ZnO is 100 parts by weight, the ceramic composition contains from 5 to 100 ppm Co in terms of CoO and from 10 to 400 ppm in terms of Cr.sub.2O.sub.3.

A hard lead zirconate titanate (PZT) ceramic has an ABO.sub.3 structure with A sites and B sites. The PZT ceramic is doped with Mn and with Nb on the B sites and the ratio Nb/Mn is <2. A piezoelectric multilayer component having such a PZT ceramic and also a method for producing a piezoelectric multilayer component are also disclosed.

A superconducting composition of matter including overlapping first and second regions. The regions comprise unit cells of a solid, the first region comprises an electrical insulator or semiconductor, and the second region comprises a metallic electrical conductor. The second region extends through the solid and a subset of said second region comprise surface metal unit cells that are adjacent to at least one unit cell from the first region. The ratio of the number of said surface metal unit cells to the total number of unit cells in the second region being at least 20 percent.

An oxide ion conductor has a X.sub.3Z.sub.2(TO.sub.4).sub.3 structure, where X is a divalent metal element, Z is a trivalent metal element, and T is a tetravalent metal element, and has a composition expressed by (X.sub.1-xA.sub.x).sub.3(Z.sub.1-yB.sub.y).sub.2(T.sub.1-zC.sub.z).sub.3O.sub.12+δ where the element X is Ca, Fe, Gd, Ba, Sr, Mn, and/or Mg, the element Z is Al, Cr, Fe, Mn, V, Ga, Co, Ni, Ru, Rh, and/or Ir, the element T is Si and/or Ge, an element A is La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and/or Sr, an element B is Zn, Mn, Co, Ru, and/or Rh, and an element C is Si, Al, Ga, and/or Sn, 0≤x≤0.2, 0≤y≤0.2, and 0≤z≤0.2 are satisfied, and δ is a value securing electrical neutrality.