A ceramic electronic device includes a dielectric layer and an internal electrode layer that are alternately stacked, wherein the dielectric layer contains yttria-stabilized zirconia and (Ca.sub.x1Ba.sub.x2Sr.sub.1-x1-x2)(Ti.sub.yZr.sub.1-y)O.sub.3 (0.6≤x1≤0.9, 0≤x2≤0.1, 0≤y≤0.1) as a main component, and wherein, in the dielectric layer, a concentration of the yttria-stabilized zirconia when a total amount of Ti and Zr is 100 mol % is 0.5 mol % or more and 5.0 mol % or less.

Sintered product having a relative density of greater than 90%, with, to more than 80% of the volume thereof, a stack of flat ceramic platelets, the assembly of the platelets having a mean thickness of less than 3 μm, having a width of greater than 50 mm, and including more than 20% of alumina, as a percentage on the basis of the weight of the product. The width of the product is the largest dimension measured in the plane in which the length of the product is measured, along a direction perpendicular to the direction of the length. The length of the product is the largest dimension thereof in a plane parallel to the general plane in which the platelets extend.

Methods and apparatus for depositing material on a continuous substrate are provided herein. In some embodiments, an apparatus for processing a continuous substrate includes: a first chamber having a first volume; a second chamber having a second volume fluidly coupled to the first volume; and a plurality of process chambers, each having a process volume defining a processing path between the first chamber and the second chamber, wherein the process volume of each process chamber is fluidly coupled to each other, to the first volume, and to the second volume, and wherein the first chamber, the second chamber, and the plurality of process chambers are configured to process a continuous substrate that extends from the first chamber, through the plurality of process chambers, and to the second chamber.

A cubic boron nitride sintered material includes: more than or equal to 50 volume % and less than 80 volume % of cubic boron nitride grains; and more than 20 volume % and less than or equal to 50 volume % of a binder phase, and when an oxygen content is measured in a direction perpendicular to an interface between cubic boron nitride grains using TEM-EDX, a first region having an oxygen content larger than an average value of an oxygen content of a cubic boron nitride grain exists, the interface exists in the first region, and a length of the first region along the direction perpendicular to the interface is more than or equal to 0.1 nm and less than or equal to 10 nm.

Ceramic-bonded diamond composite particle includes a plurality of diamond grains and silicon carbide reaction bonded to the diamond grains having a composition of 60-90 wt. % diamond, 10-40 wt. % silicon carbide, ≦2 wt. % silicon. Particles are formed by processes that forms granules in a pre-consolidation process, forms a densified compact including ceramic-bonded diamond composite material in a consolidation process or forms ceramic-bonded diamond composite material directly, and a post-consolidation process in which the densified compact or ceramic-bonded diamond composite material is mechanically broken to form a plurality of the particles. Inert or active material can be incorporated into the densified compact or coated on granules to reduce the number and extent of diamond to silicon carbide bonding occurring in the consolidation process and make the ceramic-bonded diamond composite material more friable and easily breakable into composite particles.

A polycrystalline super hard construction has a first region having a body of thermally stable polycrystalline super hard material having a plurality of intergrown grains of super hard material; a second region forming a substrate having a hard phase and a binder phase; and a third region interposed between the first and second regions. The third region includes a composite material having a first phase comprising a plurality of non-intergrown grains of super hard material, and a matrix material. A fourth region interposed between the second and third region has a major proportion having one or more components of the binder material of the second region, and one or more reaction products between the binder material of the second region and one or more components of the third region.

A cubic boron nitride sintered material includes: 0 to 85 volume % of cubic boron nitride grains; and a binder phase, wherein the binder phase includes at least one selected from a group consisting of one or more first compounds and a solid solution originated from the first compounds, the cubic boron nitride grains include, on number basis, more than or equal to 50% of cubic boron nitride grains each having an equivalent circle diameter of more than 0.5 μm, and includes, on number basis, less than or equal to 50% of cubic boron nitride grains each having an equivalent circle diameter of more than 2 μm, and when a mass of the cubic boron nitride grains is assumed as 100 mass %, a total content of lithium, magnesium, calcium, strontium, beryllium, and barium in the cubic boron nitride grains is less than 0.001 mass %.

A cubic boron nitride sintered material includes: to 98 volume % of cubic boron nitride grains; and a binder phase, wherein the binder phase includes at least one selected from a group consisting of one or more first compounds and a solid solution originated from the first compounds, the cubic boron nitride grains include, on number basis, more than or equal to 50% of cubic boron nitride grains each having an equivalent circle diameter of more than 0.5 μm, and includes, on number basis, less than or equal to 50% of cubic boron nitride grains each having an equivalent circle diameter of more than 2 μm, and when a mass of the cubic boron nitride grains is assumed as 100 mass %, a total content of lithium, magnesium, calcium, strontium, beryllium, and barium in the cubic boron nitride grains is less than 0.001 mass %.

A cubic boron nitride sintered material tool contains a plurality of cBN grains. cBN grains located on a surface of the cutting edge contain a cubic boron nitride phase, and a hexagonal boron nitride phase. When a ratio I.sub.π*/I.sub.σ* between an intensity of a π* peak derived from a π bond of hBN in the hexagonal boron nitride phase and an intensity of a σ* peak derived from a σ bond of hBN in the hexagonal boron nitride phase and a σ bond of cBN in the cubic boron nitride phase is determined by measuring an energy loss associated with excitation of K-shell electrons of boron, the ratio I.sub.π*/I.sub.σ* of the cBN grain on the surface of the cutting edge is 0.1 to 2, and the ratio I.sub.π*/I.sub.σ* of the cBN grain at a depth position of 5 μm from the surface of the cutting edge is 0.001 to 0.1.

Systems and methods for forming an oxidation protection system on a composite structure are provided. In various embodiments, the oxidation protection system comprises a boron-glass layer formed on the composite substrate and a silicon-glass layer formed over the boron-glass layer. Each of the boron-glass layer and the silicon-glass layer includes a glass former.