It is an object to provide a ferroelectric thin film having much higher ferroelectric properties than conventional Sc-doped ferroelectric thin film constituted by aluminum nitride and also having stability when applied to practical use, and also to provide an electronic device using the same.

There are provided a ferroelectric thin film represented by a chemical formula M1.sub.1-XM2.sub.XN, wherein M1 is at least one element selected from Al and Ga, M2 is at least one element selected from Mg, Sc, Yb, and Nb, and X is within a range of 0 or more and 1 or less, and also an electronic device using the same.

A cubic boron nitride sintered material includes: to 98 volume % of cubic boron nitride grains; and a binder phase, wherein the binder phase includes at least one selected from a group consisting of one or more first compounds and a solid solution originated from the first compounds, the cubic boron nitride grains include, on number basis, more than or equal to 50% of cubic boron nitride grains each having an equivalent circle diameter of more than 0.5 μm, and includes, on number basis, less than or equal to 50% of cubic boron nitride grains each having an equivalent circle diameter of more than 2 μm, and when a mass of the cubic boron nitride grains is assumed as 100 mass %, a total content of lithium, magnesium, calcium, strontium, beryllium, and barium in the cubic boron nitride grains is less than 0.001 mass %.

A substrate support structure includes a substrate support structure body formed from a ceramic composite and having a first surface, a second surface spaced apart from the first surface, and a periphery spanning the first surface and the second surface of the substrate support structure body. The first surface, the second surface, and the periphery of the substrate support structure body are defined by the ceramic composite. The ceramic composite includes two or more of a (a) an aluminum nitride (AlN) constituent, (b) an aluminum oxynitride (Al.sub.2.81O.sub.3.56N.sub.0.44, AlON) constituent, (c) an alpha-alumina (α-Al.sub.2O.sub.3) constituent, (d) a yttrium alumina garnet (Y.sub.3Al.sub.5O.sub.12, YAG) constituent, (e) a yttrium alumina monoclinic (Y.sub.4Al.sub.2O.sub.9, YAM) constituent, (f) a yttrium alumina perovskite (YAlO.sub.3, YAP) constituent, and (g) a yttrium oxide (Y.sub.2O.sub.3) constituent. Semiconductor processing systems and methods of making substrate support structures are also described.

Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

The present disclosure relates to a mold for glass forming, wherein the mold comprises a ceramic material, and wherein the ceramic material comprises aluminum nitride and hexagonal boron nitride, and wherein the ceramic material comprises from 50 to 80% by weight of aluminum nitride and from 20 to 50% by weight of hexagonal boron nitride, based on the total weight of the ceramic material. The present disclosure further relates to a process for using such molds to form curved glass plates.

Polycrystalline cubic boron nitride, PCBN, material and methods of making PCBN. A method includes providing a matrix precursor powder comprising particles having an average particle size no greater than 250 nm, providing a cubic boron nitride, cBN, powder comprising particles of cBN having an average particle size of at least 0.2 intimately mixing the matrix precursor powder and the cBN powder, and sintering the intimately mixed powders at a temperature of at least 1100° C. and a pressure of at least 3.5 GPa to form the PCBN material comprising particles of cubic boron nitride, cBN dispersed in a matrix material.

An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide (Y.sub.2O.sub.3), 10 to 100 ppm by weight of titanium (Ti), and the balance being aluminum nitride (AlN). Accordingly, a volume resistance value and thermal conductivity at a high temperature are improved, and the generation of impurities during a semiconductor manufacturing process can be suppressed.

Described are molds that include a ceramic material at a surface, as well as methods of forming the molds, and methods of using the molds; the ceramic material is constituted substantially, mostly, or entirely of three elemental components designated M, A, and X; the “M” component is at least one transition metal; the “A” component is one or a combination of Si, Al, Ge, Pb, Sn, Ga, P, S, In, As, Tl, and Cd; and the “X” component is carbon, nitrogen, or a combination thereof.

This disclosure relates to polycrystalline cubic boron nitride material with cBN particles in a metal matrix comprising zirconium nitride and/or vanadium nitride precipitates or grains.

Polycrystalline cubic boron nitride, PCBN, material and methods of making PCBN. A method includes providing a matrix precursor powder comprising particles having an average particle size no greater than 250 nm, providing a cubic boron nitride, cBN, powder comprising particles of cBN having an average particle size of at least 0.2 μm, intimately mixing the matrix precursor powder and the cBN powder, and sintering the intimately mixed powders at a temperature of at least 1100° C. and a pressure of at least 3.5 GPa to form the PCBN material comprising particles of cubic boron nitride, cBN dispersed in a matrix material.