Methods and apparatus for producing bulk silicon carbide and producing silicon carbide coatings are provided herein. The method includes feeding a mixture of silicon carbide and ceramic into a plasma sprayer. The plasma generates a stream towards a substrate forming a bulk material or optionally a coating on the substrate such as an article upon contact therewith. In embodiments, the substrate can be removed, leaving a component part fabricated from bulk silicon carbide.

There is provided a sulfide solid electrolyte containing elemental lithium (Li), elemental phosphorus (P), elemental sulfur (S), and an elemental halogen (X). The mole ratio of the elemental lithium (Li) to the elemental phosphorus (P), Li/P, satisfies 3.7<Li/P<5.4. The mole ratio of the elemental sulfur (S) to the elemental phosphorus (P), S/P, satisfies 3.9<S/P<4.1. The mole ratio of the elemental halogen (X) to the elemental phosphorus (P), X/P, satisfies 0.7<X/P<2.4. The sulfide solid electrolyte includes a crystalline phase having an argyrodite-type crystal structure.

The invention relates to the preparation of synthetic melted mica materials, and specifically relates to a stone casting process and to the composition of an initial feedstock, and may be used in the creation of novel types of stone casting in the metallurgical, mining/enrichment, refractory and construction industries. A method for producing melt-cast potassium fluorine-phlogopite includes preparing feedstock by mixing mica-containing and fluorine-containing components, melting the produced feedstock, pouring the melt into a mold, allowing to sit, removing the casting from the mold, and cooling; according to the claimed invention, the mica-containing component consists of vermiculite (60-90 wt % and the fluorine-containing component consists of potassium cryolite 10-40 wt %, wherein, the feedstock is melted via the sequential stepped heating thereof, and the feedstock is prepared by layering components, wherein the top layer of the feedstock consists of a mixture of components, and the melt is poured into a preheated mold. The use of the present invention allows for enhancing the chemical purity of the potassium fluorine-phlogopite, increasing the corrosion and erosion resistance of the material, and improving the accuracy of the chemical composition of the yielded product.

A molding material mixture for producing casting molds for metal processing, particularly for non-ferrous metals, such as aluminum or magnesium, is intended to reduce problems such as metal-mold reaction and/or shrinkage porosity defect. The free-flowing refractory molding material in the molding material mixture is coated with a mixture of inorganic salts exhibiting a eutectic melting point in the range of about 400 C to about 500 C, particularly in the range of about 420 C to about 460 C. Preferably this coating occurs by contacting the inorganic salt mixture with the molding material mixture at a temperature between 500 C and 700 C, in a manner that maintains the free-flowing nature of the coated product. One mixture of inorganic salts that is used is a mixture consisting of, by weight: 74% potassium fluoroborate; 15% potassium chloride; and 12% potassium fluoride. This mixture has a eutectic melting point of 420 C.

An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide film is selected from a group consisting of an Er—Y composition, an Er—Al—Y composition, an Er—Y—Zr composition, and an Er—Al composition.

An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide film consists essentially of 40 mol % to less than 100 mol % of Y.sub.2O.sub.3, over 0 mol % to 60 mol % of ZrO.sub.2, and 0 mol % to 9 mol % of Al.sub.2O.sub.3.

A sintered body includes a crystal grain containing silicon nitride, and a grain boundary phase. If dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value ε.sub.A of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value ε.sub.B of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |ε.sub.A−ε.sub.B|≤0.1.

Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

The invention relates to a method for producing a non-oxide ceramic powder comprising a nitride, a carbide, a boride or at least one MAX phase with the general composition Mn+1AXn, where M=at least one element from the group of transition elements (Sc, Ti, V, Cr, Zr, Nb, Mo, Hf and Ta), A=at least one A group element from the group (Si, Al, Ga, Ge, As, Cd, In, Sn, Tl and Pb), X=carbon (C) and/or nitrogen (N) and/or boron (B), and n=1, 2 or 3. According to the invention, corresponding quantities of elementary starting materials or other precursors are mixed with at least one metal halide salt (NZ), compressed (pellet), and heated for synthesis with a metal halide salt (NZ). The compressed pellet is first enveloped with another metal halide salt, compressed again, arranged in a salt bath and heated therewith until the melting temperature of the salt is exceeded. Optionally, melted silicate can be added, which prevents the salt from evaporating at high temperatures. Advantageously, the method can be carried out in the presence of air.

A solid electrolyte which contains a garnet-type composite metal oxide phase (L) and shows an excellent lithium ion conductivity is provided. The solid electrolyte contains a garnet-type composite metal oxide phase (L) and a phase (D) different from the phase (L). The phase (L) contains Li, La, Zr, O, and Ga, and an Li site in the phase (L) is substituted with the Ga. A lattice constant of the solid electrolyte is not smaller than 12.96 Å. The phase (D) contains at least one of LiF, BaZrO.sub.3, YF.sub.3, SrF.sub.2, and ScF.sub.3.