The present invention relates to a nitrogen-doped sulfide-based solid electrolyte for all-solid batteries. The a nitrogen-doped sulfide-based solid electrolyte for all-solid batteries includes a compound with an argyrodite-type crystal structure represented by the following Formula 1:
Li.sub.aPS.sub.bN.sub.cX.sub.d  [Formula 1] wherein 6≤a≤7, 3≤b≤6, 0≤c≤1, 0≤d≤2, and each X is the same or different halogen atom selected from the group consisting of chlorine (Cl), bromine (Br), and iodine (I).

A solid electrolyte, in which a part of an element contained in a mobile ion-containing material is substituted, and an occupied impurity level that is occupied by electrons or an unoccupied impurity level that is not occupied by electrons is provided between a valence electron band and a conduction band of the mobile ion-containing material, and a smaller energy difference out of an energy difference between a highest level of energy in the occupied impurity level and an energy and a LUMO level difference between a lowest level of energy in the unoccupied impurity level and a HOMO level is greater than 0.3 eV.

Disclosed is a sintered body comprising (a) a matrix material comprising at least one selected from ZnS and ZnSe, (b) an oxide that is present in a form of islands in the matrix material, comprising at least one metal selected from the group consisting of Ca, Sr and Ba, and (c) pores that are present in a form of islands in the matrix material. The sintered body has sufficient strength and an infrared stealth effect in an infrared region such as a MWIR and LWIR region.

The present invention relates to a nitrogen-doped sulfide-based solid electrolyte for all-solid batteries. The a nitrogen-doped sulfide-based solid electrolyte for all-solid batteries includes a compound with an argyrodite-type crystal structure represented by the following Formula 1:
Li.sub.aPS.sub.bN.sub.cX.sub.d  [Formula 1] wherein 6≤a≤7, 3<b<6, 0<c≤1, 0<d≤2, and each X is the same or different halogen atom selected from the group consisting of chlorine (Cl), bromine (Br), and iodine (I).

Embodiments of disclosure may provide a method for forming an aluminum-containing nitride ceramic matrix composite, comprising heating a green body, an aluminum-containing composition, ammonia and a mineralizer composition in a sealable container to a temperature between about 400 degrees Celsius and about 800 degrees Celsius and a pressure between about 10 MPa and about 1000 MPa, to form an aluminum-containing nitride ceramic matrix composite characterized by a phosphor-to-aluminum nitride (AlN) ratio, by volume, between about 1% and about 99%, by a porosity between about 1% and about 50%, and by a thermal conductivity between about 1 watt per meter-Kelvin and about 320 watts per meter-Kelvin. The green body comprises a phosphor powder comprising at least one phosphor composition, wherein the phosphor powder particles are characterized by a D50 diameter between about 100 nanometers and about 500 micrometers, and the green body has a porosity between about 10% and about 80%. The aluminum-containing composition has a purity, on a metals basis, between about 90% and about 99.9999%. The fraction of free volume within the sealable container contains between about 10% and about 95% of liquid ammonia prior to heating the green body, the aluminum-containing composition, ammonia and the mineralizer composition in the sealable container.

The present invention relates to a bismuth tungstate/bismuth sulfide/molybdenum disulfide heterojunction ternary composite material and a preparation method and application thereof. The composite material is composed of bismuth tungstate, bismuth sulfide and molybdenum disulfide in an ordered layered way, Bi.sub.2WO.sub.6 is an orthorhombic system, Bi.sub.2S.sub.3 is a p-type semiconductor located on a (130) crystal face, MoS.sub.2 is a layered transition metal sulfide located on a (002) crystal face, the whole composite material is of a spherical structure with an unsmooth surface, and a layer of nanosheets uniformly grow on an outer layer. The average particle size of composite materials is in the range of 2.4-2.6 μm. The spherical Bi.sub.2WO.sub.6/Bi.sub.2S.sub.3/MoS.sub.2 heterojunction ternary composite material prepared in the present invention has good adsorption of Cr(VI) and high catalytic reduction ability under visible light.

A complex composite particle is made of a coal dust and binder composite that is pyrolyzed. Constituent portions of the composite react together causing the particles to increase in density and reduce in size during pyrolyzation, yielding a particle suitable for use as a proppant or in a composite structure.

A method is for the production of a scintillator fiber. In an embodiment, the method includes provisioning a suspension of a binder dissolved in a solvent and a scintillator material; and pressing the suspension into a precipitation bath in which the binder is insoluble.

The present invention relates to a quantum dot and a preparation method therefor, and more specifically, to a novel quantum dot composite having high surface stability, and a preparation method therefor. The quantum dot composite according to the present invention constitutes a layered-structure ceramic composite in which the layered-structure ceramic comprises a polymer-quantum dot composite between the layers thereof.

The invention relates to a polycrystalline IR transparent material produced by sintering chalcogenide powder, e.g., ZnS powder, using hot uniaxial pressing followed by hot isostatic pressing. The microstructure of the material described in this disclosure is much finer than that found in material produced using the state of the art process. By using a powder with a particle size fine enough to improve sintering behavior but coarse enough to prevent a lowering of the wurtzite-sphalerite transition temperature, a highly transparent material with improved strength is created without degrading the optical properties. A high degree of transparency is achieved during hot pressing by applying pressure after the part has reached a desired temperature. This allows some degree of plastic deformation and prevents rapid grain growth which can entrap porosity. The crystallographic twins created during this process further inhibit grain growth during hot isostatic pressing.