A conductive paste included in inner electrodes of a multilayer ceramic capacitor is fired and includes a conductive metal powder, a ceramic powder, an organic solvent, and an organic binder. The conductive metal powder includes copper, and at least a portion of the ceramic powder is a powder of at least one oxide of an ABO.sub.3 type with a specified ionic radius in which a ratio of a six-coordinate ionic radius of an A-site element in ABO.sub.3 to a six-coordinate ionic radius of copper is about 0.96 or greater and about 1.04 or less.

There are provided a phosphor which is a divalent europium-activated oxynitride phosphor substantially represented by General formula (A): Eu.sub.aSi.sub.bAl.sub.cO.sub.dN.sub.e, a divalent europium-activated oxynitride phosphor substantially represented by General formula (B): MI.sub.fEu.sub.gSi.sub.hAl.sub.kO.sub.mN.sub.n or a divalent europium-activated nitride phosphor substantially represented by General formula (C): (MII.sub.1-pEu.sub.p)MIIISiN.sub.3, having a reflectance of light emission in a longer wavelength region of visible light than a peak wavelength of 95% or larger, and a method of producing such phosphor; a nitride phosphor and an oxynitride phosphor which emit light efficiently and stably by the light having a wavelength ranging from 430 to 480 nm from a semiconductor light emitting device by means of a light emitting apparatus using such phosphor, and a producing method of such phosphor; and a light emitting apparatus having stable characteristics and realizing high efficiency.

A sintered molded article includes a ceramic of /-sialon having a grain boundary phase, the grain boundary phase containing at least one hard material formed in situ as an additional phase. A method for the production of the sintered molded article uses at least the following compounds as a starting material: Si.sub.3N.sub.4, AlN, and, if applicable, Al.sub.2O.sub.3, at least one oxide of the rare earths, and at least one oxide of the element titanium.

A method for producing a composite of cubic boron nitride dispersed in a SiAlON ceramic. This method involves mixing silicon nitride nanoparticles, aluminum nitride nanoparticles, silica nanoparticles, calcium oxide nanoparticles, and cubic boron nitride microparticles to produce a mixture. The cubic boron nitride may be coated with nickel. The mixture is sintered to produce the composite, and this sintering may involve spark plasma sintering and/or sintering at a relatively low temperature. The composite may comprise a mixture of Ca--SiAlON and -SiAlON ceramic reinforced by boron nitride in either or both cubic and hexagonal phases.

A method for producing a composite of cubic boron nitride dispersed in a SiAlON ceramic. This method involves mixing silicon nitride nanoparticles, aluminum nitride nanoparticles, silica nanoparticles, calcium oxide nanoparticles, and cubic boron nitride microparticles to produce a mixture. The cubic boron nitride may be coated with nickel. The mixture is sintered to produce the composite, and this sintering may involve spark plasma sintering and/or sintering at a relatively low temperature. The composite may comprise a mixture of Ca--SiAlON and -SiAlON ceramic reinforced by boron nitride in either or both cubic and hexagonal phases.

A SiAlON composite includes a SiAlON phase including -SiAlON phase, -SiAlON phase and grain boundary phase. The SiAlON composite is prepared from a starting powder mixture including a silicon nitride powder and at least one powder providing aluminum, oxygen, nitrogen, yttrium (Y) and erbium (Er) to the SiAlON composite. The SiAlON composite contains the SiAlON phase of at least 90 vol %, z-value of the -SiAlON phase ranges between 0.27 and 0.36 and thermal diffusivity of the SiAlON composite is equal to or greater than 2.4 (mm.sup.2/sec) and equal to or less than 5.2 (mm.sup.2/sec).

A dielectric ceramic composition includes a first inorganic component having a trigonal ditrigonal pyramidal crystal structure, a second inorganic component having a hexoctahedral crystal structure, and a solid solution portion of the trigonal ditrigonal pyramidal crystal structure and the hexoctahedral crystal structure is formed between the first inorganic component and the second inorganic component.

A method for producing a composite of cubic boron nitride dispersed in a SiAlON ceramic. This method involves mixing silicon nitride nanoparticles, aluminum nitride nanoparticles, silica nanoparticles, calcium oxide nanoparticles, and cubic boron nitride microparticles to produce a mixture. The cubic boron nitride may be coated with nickel. The mixture is sintered to produce the composite, and this sintering may involve spark plasma sintering and/or sintering at a relatively low temperature. The composite may comprise a mixture of Ca--SiAlON and -SiAlON ceramic reinforced by boron nitride in either or both cubic and hexagonal phases.

The present invention relates to a ceramic comprising (or consisting essentially of) a solid solution containing Bi, K, Ti and Fe (and optionally Pb) which exhibits piezoelectric behaviour.

A dielectric ceramic composition includes a first inorganic component having a trigonal ditrigonal pyramidal crystal structure, a second inorganic component having a hexoctahedral crystal structure, and a solid solution portion of the trigonal ditrigonal pyramidal crystal structure and the hexoctahedral crystal structure is formed between the first inorganic component and the second inorganic component.