Patent classifications
C04B2235/85
DIELECTRIC COMPOSITION AND MULTILAYER CERAMIC CAPACITOR
A dielectric composition that contains a first complex oxide represented by (Bi.sub.xNa.sub.1−x)TiO.sub.3—CaTiO.sub.3 and having a perovskite structure as a main component; and at least one second complex oxide having a perovskite structure selected from the group consisting of BaZrO.sub.3, SrZrO.sub.3, CaZrO.sub.3, NaNbO.sub.3, and NaTaO.sub.3 as an auxiliary component. A tolerance factor t when the at least one second complex oxide is BaZrO.sub.3, NaNbO.sub.3, or NaTaO.sub.3 is 0.9016≤t≤0.9035, a tolerance factor t when the at least one second complex oxide is SrZrO.sub.3 is 0.9005≤t≤0.9025, and a tolerance factor t when the at least one second complex oxide is CaZrO.sub.3 is 0.9000 t<0.9020.
HIGH THERMAL CONDUCTIVE SILICON NITRIDE SINTERED BODY, AND SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD AND SEMICONDUCTOR APPARATUS USING THE SAME
The present invention provides a high thermal conductive silicon nitride sintered body having a thermal conductivity of 50 W/m.Math.K or more and a three-point bending strength of 600 MPa or more, wherein when an arbitrary cross section of the silicon nitride sintered body is subjected to XRD analysis and highest peak intensities detected at diffraction angles of 29.3±0.2°, 29.7±0.2°, 27.0±0.2°, and 36.1±0.2° are expressed as I.sub.29.3°, I.sub.29.7°, I.sub.27.0°, and I.sub.36.1°, a peak ratio (I.sub.29.3°)/(I.sub.27.0°+I.sub.36.1°) satisfies a range of 0.01 to 0.08, and a peak ratio (I.sub.29.7°)/(I.sub.27.0°+I.sub.36.1°) satisfies a range of 0.02 to 0.16. Due to above configuration, there can be provided a silicon nitride sintered body having a high thermal conductivity of 50 W/m.Math.K or more, and excellence in insulating properties and strength.
Sintered body, substrate, circuit board, and manufacturing method of sintered body
A sintered body includes a crystal grain containing silicon nitride, and a grain boundary phase. If dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value ε.sub.A of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value ε.sub.B of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |ε.sub.A−ε.sub.B|≤0.1.
Magnesium aluminate spinel reinforced magnesium oxide-based foam ceramic filter synthesized in situ from magnesium oxide whisker, and preparation method therefor
The present invention provides A magnesium oxide whisker in-situ formed MA spinel-reinforced magnesium oxide-based ceramic foam filter and a method for preparing the same. The method comprising: 1) preparing a ceramic slurry having a solid content of 60%-70% by dosing 15%-25% by mass of a nanometer alumina sol, 0.8%-1.5% by mass of a rheological agent, and the balance magnesium oxide ceramic powder comprising magnesium oxide whiskers, and then adding deionized water and ball milling to mix until uniform, and then vacuum degassing the mixture; 2) soaking a polyurethane foam template into the ceramic slurry, squeezing by a roller press the polyurethane foam template to remove redundant slurry therein to make a biscuit, and drying the biscuit by heating it to 80° C.-1200° C.; 3) putting the dried biscuit into a sintering furnace, elevating the temperature to 1400° C.-1600° C. and performing a high temperature sintering, cooling to the room temperature with the furnace to obtain the magnesium oxide-based ceramic foam filter.
CUTTING TOOL
A cutting tool (1) formed of a silicon nitride-based sintered body (2) including a matrix phase (3), a hard phase (4), and a grain boundary phase (10) in which a glass phase (11) and a crystal phase (12) exist. The sintered body (2) contains yttrium in an amount of 5.0 wt % to 15.0 wt % in terms of an oxide, and contains titanium nitride as the hard phase (4) in an amount of 5.0 wt % to 25.0 wt %. In an X-ray diffraction peak, a halo pattern appears at 2θ ranging from 25° to 35° in an internal region of the sintered body (2). A ratio B/A of a maximum peak intensity B to a maximum peak intensity A satisfies 0.11≤B/A≤0.40 . . . Expression (1) in a surface region of the sintered body (2), and satisfies 0.00≤B/A≤0.10 . . . Expression (2) in the internal region of the sintered body (2).
LITHIUM-ION-CONDUCTIVE OXIDE SINTERED BODY AND USE THEREOF
The present invention aims to provide a lithium-ion-conducting oxide sintered body capable of providing a solid electrolyte with an excellent ion conductivity, and a solid electrolyte, an electrode and an all-solid-state battery using the same. The lithium-ion-conducting oxide sintered body including at least lithium, tantalum, phosphorus, silicon, and oxygen as constituent elements, and having a polycrystalline structure consisting of crystal grains and grain interfaces formed between the crystal grains.
Bonded ceramic assembly
The bonded ceramic assembly of the present disclosure includes a first substrate made of ceramic, a second substrate made of ceramic, and a bonding layer positioned between the first substrate and the second substrate. The bonding layer contains aluminum, at least one of calcium and magnesium, a rare earth element, silicon, and oxygen. Out of a total 100 mass % of all of the components making up the bonding layer, the bonding layer contains from 33 mass % to 65 mass % aluminum in terms of oxide, a total of from 27 mass % to 60 mass % calcium and magnesium in terms of oxide, and from 2 mass % to 12 mass % rare earth element in terms of oxide. The silicon content, in terms of oxide, of the surface of the bonding layer is greater than the silicon content, in terms of oxide, of the interior of the bonding layer.
PIEZOELECTRIC MATERIAL COMPOSITION, METHOD OF MANUFACTURING THE SAME, PIEZOELECTRIC DEVICE, AND APPARATUS INCLUDING THE PIEZOELECTRIC DEVICE
A piezoelectric material composition, a method of manufacturing the same, a piezoelectric device, and apparatus including the piezoelectric device. The piezoelectric device may include a piezoelectric device layer including a first material and a second material surrounded by the first material, a first electrode portion disposed at a first surface of the piezoelectric device layer, and a second electrode portion disposed at a second surface of the piezoelectric device layer opposite to the first surface, wherein the piezoelectric device layer comprises a piezoelectric material composition represented by Chemical Formula 1: 0.96(Na.sub.aK.sub.1-a)(Nb.sub.b(T.sub.1-b))O.sub.3-(0.04-x)MZrO.sub.3-x(Bi.sub.cAg.sub.1-c)ZrO.sub.3+d mol % NaNbO.sub.3, wherein T is Sb or Ta, M is Sr, Ba or Ca, a is 0.4≤a≤0.6, b is 0.90≤b≤0.98, c is 0.4≤c≤0.6, d is 0≤d≤5.0, and x is 0≤x≤0.04 and wherein T is Sb or Ta and M is Sr, Ba, or Ca.
DIELECTRIC COMPOSITION AND MULTILAYER CAPACITOR
A dielectric composition and a multilayer capacitor including the same are disclosed. The dielectric composition including: a BaTiO.sub.3-based main ingredient; a first auxiliary ingredient including rare earth elements; and a second auxiliary ingredient including at least one of Ba and Ca but essentially including Ba, wherein the rare earth elements include Tb and Dy, and the first auxiliary ingredient and the second auxiliary ingredient satisfy a molar content condition of 0.40<(Tb/T_RE)*(Ba+Ca)<0.93, where T_RE is a total molar content of the rare earth elements in the first auxiliary ingredient.
DENSE ENERGY STORAGE ELEMENT WITH MULTILAYER ELECTRODES
An energy storage element and method of fabrication thereof are disclosed. An energy storage element includes a set of electrodes where one or more electrodes have extended conductive paths through nano-channel electric interconnections with ceramic particles in one or more dielectric layers. The electrode's electric field is extended into the dielectric material providing increased capacitance. The set of electrodes can include a pair of electrode layers respectively attached directly to opposing sides of one dielectric layer. The set of electrodes, which can also be referred to as multi-layer electrodes, can include a plurality of electrode layers interleaved between, and directly attached to, a plurality of stacked dielectric layers.