Patent classifications
C04B2235/9607
HEAT-RESISTANT MEMBER
A heat-resistant member (1) according to the present disclosure contains alumina as a main component, and magnesium aluminate and boron. The content percentage of the magnesium aluminate at the surface is higher than the content percentage of the magnesium aluminate in a surface layer section located directly below the surface.
Coating material, outer periphery-coated silicon carbide-based honeycomb structure, and method for coating outer periphery of silicon carbide-based honeycomb structure
A coating material for a silicon carbide-based honeycomb structure, the coating material including from 20 to 75% by mass of ceramic powder (A), the ceramic powder (A) including from 55 to 95% by mass of silicon carbide and from 5 to 30% by mass of silicon dioxide as chemical components.
INORGANIC FIBER MOLDED BODY, HEATING FURNACE, STRUCTURE, AND METHOD FOR MANUFACTURING INORGANIC FIBER MOLDED BODY
An inorganic fiber molded body includes an alumina fiber, an inorganic porous filler, and a colloidal silica, in which a ratio of crystalline minerals in the alumina fiber is 30% by mass or more and 80% by mass or less, the inorganic porous filler contains CaO.Math.6Al.sub.2O.sub.3 in which a particle diameter D95, which has a cumulative value of 95% in a volume frequency particle size distribution, is 300 μm or less, and in 100% by mass of the inorganic fiber molded body, a content of the alumina fiber is 15% by mass or more and 70% by mass or less, a content of the inorganic porous filler is 20% by mass or more and 79% by mass or less, and a content of the colloidal silica is 2% by mass or more and 8% by mass or less.
THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC CONVERSION ELEMENT, AND THERMOELECTRIC CONVERSION MODULE
A thermoelectric conversion material includes Mg.sub.2Si.sub.xSn.sub.1−x (where 0.3≤X≤1) and a boride containing one or two or more metals selected from titanium, zirconium, and hafnium. Further, it is preferable that the boride is one or two or more selected from TiB.sub.2, ZrB.sub.2, and HfB.sub.2.
Dense composite material, method for producing the same, joined body, and member for semiconductor manufacturing device
According to the present invention, a dense composite material includes titanium silicide in an amount of 43 to 63 mass %; silicon carbide in an amount less than the mass percentage of the titanium silicide; and titanium carbide in an amount less than the mass percentage of the titanium silicide. In the dense composite material, a maximum value of interparticle distances of the silicon carbide is 40 μm or less, a standard deviation of the interparticle distances is 10 or less, and an open porosity of the dense composite material is 1% or less.
Ceramic thermal insulation
A heat resistant electronic component is disclosed, comprising an electronic component covered by a layer of ceramic thermal insulation material containing lithium molybdate Li.sub.2MoO.sub.4. A process for manufacturing the heat resistant electronic component comprises obtaining ceramic thermal insulation material containing lithium molybdate Li.sub.2MoO.sub.4 in a mouldable form, optionally mixing the ceramic thermal insulation material with at least one additive, covering an electronic component with the material, shaping the material covering the electronic component into a desired form, and drying the desired form at a temperature of from 20° C. to 120° C.
HIGH THERMAL CONDUCTIVE SILICON NITRIDE SINTERED BODY, AND SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD AND SEMICONDUCTOR APPARATUS USING THE SAME
The present invention provides a high thermal conductive silicon nitride sintered body having a thermal conductivity of 50 W/m.Math.K or more and a three-point bending strength of 600 MPa or more, wherein when an arbitrary cross section of the silicon nitride sintered body is subjected to XRD analysis and highest peak intensities detected at diffraction angles of 29.3±0.2°, 29.7±0.2°, 27.0±0.2°, and 36.1±0.2° are expressed as I.sub.29.3°, I.sub.29.7°, I.sub.27.0°, and I.sub.36.1°, a peak ratio (I.sub.29.3°)/(I.sub.27.0°+I.sub.36.1°) satisfies a range of 0.01 to 0.08, and a peak ratio (I.sub.29.7°)/(I.sub.27.0°+I.sub.36.1°) satisfies a range of 0.02 to 0.16. Due to above configuration, there can be provided a silicon nitride sintered body having a high thermal conductivity of 50 W/m.Math.K or more, and excellence in insulating properties and strength.
CIRCUIT SUBSTRATE AND SEMICONDUCTOR DEVICE
To improve a TCT characteristic of a circuit substrate. The circuit substrate comprises a ceramic substrate including a first and second surfaces, and first and second metal plates respectively bonded to the first and second surfaces via first and second bonding layers. A three-point bending strength of the ceramic substrate is 500 MPa or more. At least one of L1/H1 of a first protruding portion of the first bonding layer and L2/H2 of a second protruding portion of the second bonding layer is 0.5 or more and 3.0 or less. At least one of an average value of first Vickers hardnesses of 10 places of the first protruding portion and an average value of second Vickers hardnesses of 10 places of the second protruding portion is 250 or less.
CERAMIC MATRIX COMPOSITE ARTICLES HAVING DIFFERENT LOCALIZED PROPERTIES AND METHODS FOR FORMING SAME
Ceramic matrix composite articles include, for example a first plurality of plies of ceramic fibers in a ceramic matrix defining a first extent, and a local at least one second ply in said ceramic matrix defining a second extent on and/or in said first plurality of plies with the second extent being less than said first extent. The first plurality of plies has a first property, the at least one second ply has at least one second property, and said first property being different from said at least one second property. The different properties may include one or more different mechanical (stress/strain) properties, one or more different thermal conductivity properties, one or more different electrical conductivity properties, one or more different other properties, and combinations thereof.
INORGANIC STRUCTURE AND METHOD FOR PRODUCING SAME
Provided is an inorganic structure including a plurality of zirconium silicate particles; and a binding part that covers a surface of each of the zirconium silicate particles and binds the zirconium silicate particles together. The binding part contains an amorphous compound containing silicon, a metallic element other than silicon, and oxygen, and contains substantially no alkali metal, B, V, Te, P, Bi, Pb and Zn. Also provided is a method for producing an inorganic structure including: a step for obtaining a mixture by mixing a plurality of zirconium silicate particles, a plurality of amorphous silicon dioxide particles, and an aqueous solution containing a metallic element other than silicon; and a step for pressurizing and heating the mixture under conditions of a pressure of 10 to 600 MPa and a temperature of 50 to 300° C.