A ceramic joined body (1) includes: a pair of ceramic plates (2,3) that include a conductive material; a conductive layer (4) and an insulating layer (5) that are interposed between the pair of ceramic plates (2, 3); and a pair of intermediate layers (6, 7) that are interposed between the pair of ceramic plates (2, 3) and the conductive layer (4) and are in contact with the pair of ceramic plates (2, 3) and the conductive layer (4).

A multilayer electronic component that includes a stacked body having therein a plurality of dielectric layers including a CZ-based perovskite phase and an element M1, a plurality of internal electrode layers including Cu, and an interface layer including the element M1 in at least a portion of an interface with the plurality of internal electrode layers. Element M1 is an element that has a binding energy between CZ and Cu via the element M1 of less than or equal to −9.8 eV by first-principles calculation using a pseudopotential method. When amounts of elements included in the dielectric layers are expressed as parts by mol, a ratio m1 of an amount of the element M1 to an amount of the Zr in the interface layer is 0.03≤m1≤0.25.

A first ceramic member and a second ceramic member are joined together at a lower joining temperature while reducing the loss of bond strength. A method for producing a semiconductor production device component includes a step of providing a first ceramic member including an AlN-based material, a step of providing a second ceramic member including an AlN-based material, and a step of joining the first ceramic member and the second ceramic member to each other by thermally pressing the first ceramic member and the second ceramic member to each other via a joint agent including Eu.sub.2O.sub.3, Gd.sub.2O.sub.3 and Al.sub.2O.sub.3 disposed between the first ceramic member and the second ceramic member.

The bonded ceramic assembly of the present disclosure includes a first substrate made of ceramic, a second substrate made of ceramic, and a bonding layer positioned between the first substrate and the second substrate. The bonding layer contains aluminum, at least one of calcium and magnesium, a rare earth element, silicon, and oxygen. Out of a total 100 mass % of all of the components making up the bonding layer, the bonding layer contains from 33 mass % to 65 mass % aluminum in terms of oxide, a total of from 27 mass % to 60 mass % calcium and magnesium in terms of oxide, and from 2 mass % to 12 mass % rare earth element in terms of oxide. The silicon content, in terms of oxide, of the surface of the bonding layer is greater than the silicon content, in terms of oxide, of the interior of the bonding layer.

Disclosed is a joined ceramic body comprising a first ceramic portion comprising a first ceramic, a second ceramic portion comprising a second ceramic, and a joining layer formed between the first ceramic portion and the second ceramic portion. The joining layer has a bond thickness of from 0.5 to 20 um and comprises silicon dioxide having a total impurity content of 20 ppm and less. A method of making the joined ceramic body and a joining material are also disclosed.

A pillar shaped honeycomb structure for induction heating, the honeycomb structure being made of ceramics and including: an outer peripheral wall; and a partition wall disposed on an inner side of the outer peripheral wall, the partition wall defining a plurality of cells, each of the cells penetrating from one end face to other end face to form a flow path, wherein a composite material containing a conductor and a non-conductor is provided in the cells in a region of 50% or less of the total length of the honeycomb structure from one end face, and wherein the conductor is a conductor that generates heat in response to a change in a magnetic field.

A ceramic joined body (1) includes: a pair of ceramic plates (2,3) that include a conductive material; and a conductive layer (4) and an insulating layer (5) that are interposed between the pair of ceramic plates (2, 3), a porosity at an interface between the pair of ceramic plates (2, 3) and the insulating layer (5) is 4% or less, and a ratio of an average primary particle diameter of an insulating material which forms the insulating layer (5) to an average primary particle diameter of an insulating material which forms the ceramic plates (2, 3) is more than 1.

An AlN joined body includes a first AlN member and a second AlN member that are joined together. The content of yttria in the first AlN member is equal to or below the detection limit. The second AlN member contains yttria.

A method for manufacturing an optical element is a method for manufacturing an optical element in which laser light is transmitted, reciprocated, or reflected, and the method includes a first step of obtaining a bonded element formed by subjecting a first element part and a second element part, both being transparent to laser light, to surface activated bonding with a non-crystalline layer interposed therebetween; and after the first step, a second step of crystallizing at least a portion of the non-crystalline layer by raising the temperature of the bonded element. In the second step, the temperature of the bonded element is raised to a predetermined temperature that is lower than the melting points of the first element part and the second element part.

A method for producing a ceramic conversion element and a light-emitting device are disclosed. In an embodiment the method includes providing at least four functional layers, each being a green body or a ceramic, wherein first functional layer is formed as a first luminous layer comprising an oxide and configured to at least partially convert light of a first wavelength range into light of a second wavelength range, wherein a second functional layer is formed as a second luminous layer comprising a nitride and configured to at least partially convert light of the first wavelength range into light of a third wavelength range, wherein a third functional layer is formed as a first intermediate layer, wherein the first intermediate layer comprises an oxide, wherein a fourth functional layer is formed as a second intermediate layer, and wherein the second intermediate layer comprises a nitride or an oxynitride.