A carrier substrate (1) for electrical components, in particular metal-ceramic substrate (1) for electrical components, comprising an insulation layer (10), the insulation layer (10) preferably having a material comprising a ceramic or a composite comprising at least one ceramic layer, a component metallization (20) which is formed on a component side (BS) and has a first primary structuring (21), and a cooling part metallization (30) which is formed on a cooling side (KS) opposite the component side (BS) and has a second primary structuring (31), wherein the insulation layer (10), the component metallization (20) and the cooling part metallization (30) are arranged one above the other along a stacking direction (S), and
wherein the first primary structuring (21) and the second primary structuring (31), as viewed in the stacking direction (S), run congruently at least in portions.

One aspect of the present disclosure provides a composite body including: a nitride sintered body having a porous structure; and a semi-cured product of a thermosetting composition impregnated into the above-described nitride sintered body, in which dielectric breakdown voltage is 4.5 kV or higher.

Methods of forming a metallic-ceramic brazed joint are disclosed herein. The method of forming the brazed joint includes deoxidizing the surface of metallic components, assembling the joint, heating the joint to fuse the joint components, and cooling the joint. In certain embodiments, the brazed joint includes a conformal layer. In further embodiments, the brazed joint has features in order to reduce stress concentrations within the joint.

Provided is a polycrystalline ceramic substrate to be bonded to a compound semiconductor substrate with a bonding layer interposed therebetween, wherein at least one of relational expression (1) 0.7<α.sub.1/α.sub.2<0.9 and relational expression (2) 0.7<α.sub.3/α.sub.4<0.9 holds, where α.sub.1 represents a linear expansion coefficient of the polycrystalline ceramic substrate at 30° C. to 300° C. and α.sub.2 represents a linear expansion coefficient of the compound semiconductor substrate at 30° C. to 300° C., and α.sub.3 represents a linear expansion coefficient of the polycrystalline ceramic substrate at 30° C. to 1000° C. and α.sub.4 represents a linear expansion coefficient of the compound semiconductor substrate at 30° C. to 1000° C.

A copper/ceramic bonded body is provided, including: a copper member made of copper or a copper alloy; and a ceramic member, the copper member and the ceramic member being bonded to each other, in which a total concentration of Al, Si, Zn, and Mn is 3 atom % or less when concentration measurement is performed by an energy dispersive X-ray analysis method at a position 1000 nm away from a bonded interface between the copper member and the ceramic member to a copper member side, assuming that a total value of Cu, Mg, Ti, Zr, Nb, Hf, Al, Si, Zn, and Mn is 100 atom %.

A method for brazing a first ceramic component and a second metal alloy component, to make a structural or external timepiece element, a zirconia-based ceramic is chosen for the first component and a titanium alloy for the second component, a first recess is made inside the first component, set back from a first surface in a junction area with a second surface of the second component, braze material is deposited on this first surface and inside each recess, the second surface is positioned in alignment with the first surface to form an assembly, this assembly is heated in a controlled atmosphere to above the melting temperature of the braze material, in order to form the braze in the junction area.

The ceramic joint body according to the present disclosure includes: a first member made of ceramic and including a first flow channel configured to feed fluid; and a second member made of ceramic and including a second flow channel connected to the first flow channel to feed the fluid. The ceramic includes zirconium oxide and aluminum oxide, and at least one of the zirconium oxide and the aluminum oxide is a primary constituent, and a first opposing surface of the first member, which faces the second member, and a second opposing surface of the second member, which faces the first member, are connected by diffusion bonding.

The invention relates to a method for annealing of at least two wafers bonded via low-temperature direct bonding comprising heating the bonded wafers up to a first annealing temperature in the range of 100° C. to 500° C., preferably 150° C. to 400° C., even more preferred 150° C. to 200° C., holding the first annealing temperature in a range of 1 to 4 hours, preferably 1 to 3 hours, cooling down the bonded wafers to room temperature, re-heating the bonded wafers to a second annealing temperature in the range of 100° C. to 500° C., preferably 150° C. to 400° C., even more preferred 150° C. to 200° C., and cooling down the bonded wafers to room temperature.

Disclosed are a multi-layer composite ceramic plate and a manufacturing method thereof. The composite ceramic plate includes at least one basic sandwich structure. The manufacturing method includes: preparing a sheet-like green body with ceramic powders; pre-sintering the green body at a pre-sintering temperature lower than the sintering temperature to obtain a pre-sintered ceramic member with certain strength; forming a metal electrode layer on an upper surface of the pre-sintered ceramic member; placing the pre-sintered ceramic member in a mold, with the upper surface coated with the metal electrode layer facing upwards; providing a ceramic precursor layer on the upper surface of the pre-sintered ceramic member; carrying out hot-pressing sintering in the axial direction of the pre-sintered ceramic member at the sintering temperature to form an integral structure, wherein by the hot-pressing sintering, a second ceramic layer is formed by the pre-sintered ceramic member, a first ceramic layer is formed by the ceramic precursor layer, and the metal electrode layer is located between the first ceramic layer and the second ceramic layer to from a basic sandwich structure together with the first ceramic layer and the second ceramic layer.

An example article may include a component, a substrate including a first ceramic, a joining layer between the component and the substrate, and a joint surface coating between the substrate and the joining layer. The joint surface coating may include a diffusion barrier layer including a second ceramic material, and a compliance layer including at least one of a metal or a metalloid. An example technique may include holding a first joining surface of a coated component adjacent a second joining surface of a second component. The example technique may further include heating at least one of the coated component, the second component, and a braze material, and brazing the coated component by allowing the braze material to flow in a region between the first joining surface and the second joining surface.