A ceramic circuit substrate having high bonding performance and excellent thermal cycling resistance properties, having a circuit pattern provided on a ceramic substrate with a braze material layer interposed therebetween, and a protruding portion formed by the braze material layer protruding from the outer edge of the circuit pattern, wherein: the braze material layer includes Ag, Cu, Ti, and Sn or In; and an Ag-rich phase is formed continuously for 300 μm or more, towards the inside, from an outer edge of the protruding portion, along a bonding interface between the ceramic substrate and the circuit pattern, and has a bonding void ratio of 1.0% or less.

An electronic device housing, and an electronic device including the same are provided. The electronic device housing includes a substrate including glass, an insert portion which is bonded to the substrate at a surface of the insert portion, and at which a functional component of an electronic device having the electronic device housing is disposed, and an elastic layer which is between the substrate and the insert portion and extends along the surface of the insert portion.

An example article may include a component, a substrate including a first ceramic, a joining layer between the component and the substrate, and a joint surface coating between the substrate and the joining layer. The joint surface coating may include a diffusion barrier layer including a second ceramic material, and a compliance layer including at least one of a metal or a metalloid. An example technique may include holding a first joining surface of a coated component adjacent a second joining surface of a second component. The example technique may further include heating at least one of the coated component, the second component, and a braze material, and brazing the coated component by allowing the braze material to flow in a region between the first joining surface and the second joining surface.

Electrical insulating properties between adjacent copper plates are improved while a defect of a bonded substrate which is caused by concentration of stress to end portions of the copper plates is prevented. A bonded substrate includes a silicon nitride ceramic substrate, a copper plate, and a bonding layer. The copper plate and the bonding layer are disposed on the silicon nitride ceramic substrate. The bonding layer bonds the copper plate to the silicon nitride ceramic substrate. The bonding layer includes: an interplate portion between the silicon nitride ceramic substrate and the copper plate; and a protruding portion protruding from between the silicon nitride ceramic substrate and the copper plate. Exposure of the silicon nitride ceramic substrate is prevented at a position where the protruding portion is disposed.

The present disclosure is directed to a composite material comprising a thermoplastic adhesive and nanotubes oriented in the in-plane orientation. In additional aspects, the disclosure includes a laminated armor material comprising the composite and armor materials.

The present disclosure relates to laminated armor materials for enhanced ballistic protection. In particular, the present disclosure relates to laminated armor materials comprising first and second armor materials and a laminated adhesive layer comprising nanomaterial fillers.

Ceramic welding methods and welded articles are disclosed. The present disclosure shows that transparent and diffuse ceramics can be successfully joined using lasers. The diffuse ceramic welding can be aided by introducing a small gap for optical penetration while no gap is necessary in the transparent ceramics case. Laser welding is more versatile on transparent ceramics since one can focus through the material allowing the joining of more complex geometries and over multiple interaction zones, increasing the ultimate weld volumes.

The bonded substrate includes the silicon nitride ceramic substrate, a copper plate, the bonding layer, and penetrating regions. The copper plate and the bonding layer are patterned into a predetermined shape, and are disposed over a main surface of the silicon nitride ceramic substrate. The bonding layer bonds the copper plate to the main surface of the silicon nitride ceramic substrate. The penetrating regions each include one or more penetrating portions penetrating continuously from the main surface of the substrate into the silicon nitride ceramic substrate to a depth of 3 μm or more and 20 μm or less, and contain silver, and the number of penetrating regions present per square millimeter of the main surface of the substrate is one or more and 30 or less.

A bonded substrate includes: a silicon nitride ceramic substrate; a copper plate; and a bonding layer bonding the copper plate to the silicon nitride ceramic substrate, wherein the bonding layer has a first interface in contact with the silicon nitride ceramic substrate and a second interface in contact with the copper plate, and contains a nitride and a silicide of an active metal as at least one metal selected from the group consisting of titanium and zirconium, an atomic fraction of nitrogen of the bonding layer is greatest at the first interface and is smallest at the second interface, and a sum of atomic fractions of the active metal and silicon of the bonding layer is smallest at the first interface and is greatest at the second interface.

An example article may include a component, a substrate including a first ceramic, a joining layer between the component and the substrate, and a joint surface coating between the substrate and the joining layer. The joint surface coating may include a diffusion barrier layer including a second ceramic material, and a compliance layer including at least one of a metal or a metalloid. An example technique may include holding a first joining surface of a coated component adjacent a second joining surface of a second component. The example technique may further include heating at least one of the coated component, the second component, and a braze material, and brazing the coated component by allowing the braze material to flow in a region between the first joining surface and the second joining surface.