Patent classifications
C04B2237/765
Semiconductor substrate support with multiple electrodes and method for making same
A method for manufacturing an electrostatic chuck with multiple chucking electrodes made of ceramic pieces using metallic aluminum as the joining. The aluminum may be placed between two pieces and the assembly may be heated in the range of 770 C to 1200 C. The joining atmosphere may be non-oxygenated. After joining the exclusions in the electrode pattern may be machined by also machining through one of the plate layers. The machined exclusion slots may then be filled with epoxy or other material. An electrostatic chuck or other structure manufactured according to such methods.
Method for producing semiconductor production device component, and semiconductor production device component
A first ceramic member and a second ceramic member are joined together at a lower joining temperature while reducing the loss of bond strength. A method for producing a semiconductor production device component includes a step of providing a first ceramic member including an AlN-based material, a step of providing a second ceramic member including an AlN-based material, and a step of joining the first ceramic member and the second ceramic member to each other by thermally pressing the first ceramic member and the second ceramic member to each other via a joint agent including Eu.sub.2O.sub.3, Gd.sub.2O.sub.3 and Al.sub.2O.sub.3 disposed between the first ceramic member and the second ceramic member.
Low firing temperature dielectric materials designed to be co-fired with high bismuth garnet ferrites for miniaturized isolators and circulators
Disclosed herein are embodiments of low temperature co-fireable dielectric materials which can be used in conjunction with high dielectric materials to form composite structures, in particular for isolators and circulators for radiofrequency components. Embodiments of the low temperature co-fireable dielectric materials can be scheelite or garnet structures, for example, bismuth vanadate. Adhesives and/or glue is not necessary for the formation of the isolators and circulators.
Ceramic matrix composite-based seal
A seal includes a ceramic matrix composite ply having woven ceramic-based fibers in a ceramic-based matrix. The ceramic matrix composite ply has at least one bend formed about a bend axis and defines at least one rounded portion. A sealed assembly and a method of making a seal are also disclosed.
CERAMIC MATRIX COMPOSITE-BASED SEAL
A seal includes a ceramic matrix composite ply having woven ceramic-based fibers in a ceramic-based matrix. The ceramic matrix composite ply has at least one bend formed about a bend axis and defines at least one rounded portion. A sealed assembly and a method of making a seal are also disclosed.
CERAMIC DISCS AND RODS, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME
Disclosed herein is a dual density disc comprising a dense outer tube comprising alumina having a purity of greater than 99%; and a porous core comprising alumina of a lower density than a density of the dense outer tube; wherein the porous core has an alumina purity of greater than 99%. Disclosed herein too is method comprising disposing in a dense outer tube a slurry comprising alumina powder and a pore former; heating the dense outer tube with the slurry disposed therein to a temperature of 300 to 600° C. to activate the pore former; creating a porous core in the dense outer tube; and sintering the dense outer tube with the porous core at a temperature of 800 to 2000° C. in one or more stages.
POROUS FLOW RESTRICTOR AND METHODS OF MANUFACTURE THEREOF
Disclosed herein is a dual density disc comprising a dense outer tube comprising a metal oxide having a purity of greater than 92%; and a porous core comprising a metal oxide of a lower density than a density of the dense outer tube; wherein the porous core has a metal oxide purity of greater than 99%; where the dense outer tube has an inner tapered surface.
Semiconductor processing equipment with high temperature resistant nickel alloy joints and methods for making same
A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The ceramic pieces may be aluminum nitride or other ceramics, and the pieces may be brazed with Nickel and an alloying element, under controlled atmosphere. The completed joint will be fully or substantially Nickel with another element in solution. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the interior of a heater or electrostatic chuck. Semiconductor processing equipment comprising ceramic and joined with a nickel alloy and adapted to withstand processing chemistries, such as fluorine chemistries, as well as high temperatures.
JOINING MATERIAL WITH SILICON CARBIDE PARTICLES AND REACTIVE ADDITIVES
In some examples, a method including forming a layer of a slurry composition between a first ceramic or CMC part and a second ceramic or CMC part. The slurry composition includes a carrier material; and a plurality of solid particles in the carrier material. The plurality of solid particles includes first silicon carbide (SiC) particles defining a first average particle size, second SiC particles defining a second average particles size that is less than the first average particles size, and reactive additive particles. The method includes heating the layer of slurry composition to react the plurality of reactive additive particles to fuse the plurality of first SiC particles and the plurality of second SiC particles together with the reactive additive particles, wherein the fused layer of the slurry composition forms a joint layer that joins the first ceramic or CMC part to the second ceramic or CMC part.
INTER-TURBINE DUCTS
An inter-turbine duct includes a first annular wall with a ceramic composite material and including a first plurality of layers and a second plurality of layers, the first plurality of layers including a slot extending therethrough; and a first vane with a material of a metal alloy or a ceramic material. The first vane has a first end and a flange extending through the slot with the flange extending away from the first end and being retained between the first plurality of layers and the second plurality of layers of the first annular wall.