Patent classifications
C04B2237/80
Semiconductor substrate support with multiple electrodes and method for making same
A method for manufacturing an electrostatic chuck with multiple chucking electrodes made of ceramic pieces using metallic aluminum as the joining. The aluminum may be placed between two pieces and the assembly may be heated in the range of 770 C to 1200 C. The joining atmosphere may be non-oxygenated. After joining the exclusions in the electrode pattern may be machined by also machining through one of the plate layers. The machined exclusion slots may then be filled with epoxy or other material. An electrostatic chuck or other structure manufactured according to such methods.
Bonded ceramic assembly
The bonded ceramic assembly of the present disclosure includes a first substrate made of ceramic, a second substrate made of ceramic, and a bonding layer positioned between the first substrate and the second substrate. The bonding layer contains aluminum, at least one of calcium and magnesium, a rare earth element, silicon, and oxygen. Out of a total 100 mass % of all of the components making up the bonding layer, the bonding layer contains from 33 mass % to 65 mass % aluminum in terms of oxide, a total of from 27 mass % to 60 mass % calcium and magnesium in terms of oxide, and from 2 mass % to 12 mass % rare earth element in terms of oxide. The silicon content, in terms of oxide, of the surface of the bonding layer is greater than the silicon content, in terms of oxide, of the interior of the bonding layer.
Multi-layer ceramic capacitor and method of producing the same
A multi-layer ceramic capacitor includes: a first region including a polycrystal including, as a main component, crystal grains free from intragranular pores; a second region that includes a polycrystal including, as a main component, crystal grains including intragranular pores and includes a higher content of silicon than a content of silicon in the first region; a capacitance forming unit including ceramic layers laminated along a first direction, and internal electrodes disposed between the ceramic layers; and a protective portion including a cover that covers the capacitance forming unit and constitutes a main surface facing in the first direction, a side margin constituting a side surface facing in a second direction orthogonal to the first direction, and a ridge constituting a connection portion, the connection portion connecting the main surface and the side surface to each other. The ceramic layers include the first region. The ridge includes the second region.
METHOD FOR MULTILAYER CERAMIC ELECTRONIC DEVICE WITH PUNCHED OUT SIDE MARGIN PARTS
A method for manufacturing a multilayer ceramic electronic device includes punching out a ceramic sheet by one of left and right side surfaces of a laminated body so as to form a side margin part on the one of the left and right side surfaces of said laminated body; and punching out another ceramic sheet by another of the left and right side surfaces of the laminated body so as to form a side margin part on the another of the left and right side surfaces of said laminated body, thereby forming a ceramic main body having the laminated body and the pair of side margin parts that respectively cover the left and right side surfaces of the laminated body. The width W is greater than the length L in the multilayer ceramic electronic device.
CERAMIC ELECTRONIC DEVICE AND MANUFACTURING METHOD OF THE SAME
A ceramic electronic device includes a multilayer structure in which a plurality of dielectric layers and a plurality of internal electrode layers are alternately stacked. Each of the plurality of dielectric layers includes ceramic grains of a main component thereof expressed by (Ba.sub.1−x−yCa.sub.xSr.sub.y)(Ti.sub.1−zZr.sub.z)O.sub.3 (0<x≤0.2, 0≤y≤0.1, 0≤z≤0.1). D3<D1<D2 is satisfied when an average grain diameter of the ceramic grains of the main component of the plurality of dielectric layers in a section in which each two internal electrode layers is D1, an average grain diameter of the ceramic grains of the main component of first dielectric layers which are located at different height positions from the internal electrode layers is D2, an average grain diameter of the ceramic grains of the main component of second dielectric layers which are located at same height positions of the internal electrode layers is D3.
Semiconductor processing equipment with high temperature resistant nickel alloy joints and methods for making same
A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The ceramic pieces may be aluminum nitride or other ceramics, and the pieces may be brazed with Nickel and an alloying element, under controlled atmosphere. The completed joint will be fully or substantially Nickel with another element in solution. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the interior of a heater or electrostatic chuck. Semiconductor processing equipment comprising ceramic and joined with a nickel alloy and adapted to withstand processing chemistries, such as fluorine chemistries, as well as high temperatures.
Multilayer electronic component having moisture-proof layer on body thereof
A multilayer electronic component includes a body including dielectric layers and first and second internal electrodes alternately laminated with respective dielectric layers interposed therebetween, and first and second surfaces opposing each other in a direction by which the internal electrodes are laminated, third and fourth surfaces connected to the first and second surfaces and opposing each other, and fifth and sixth surfaces connected to the first to fourth surfaces and opposing each other; a moisture-proof layer disposed on at least one surface of anyone of the first, second, fifth, or sixth surface and containing a rare-earth oxide; a first external electrode disposed on the third surface and connected to the first internal electrodes; and a second external electrode disposed on the fourth surface and connected to the second internal electrodes.
Method of manufacturing epitaxy substrate
A method of manufacturing an epitaxy substrate is provided. A handle substrate is provided. A beveling treatment is performed on an edge of a device substrate such that a bevel is formed at the edge of the device substrate, wherein a thickness of the device substrate is greater than 100 μm and less than 200 μm. An ion implantation process is performed on a first surface of the device substrate to form an implantation region within the first surface. A second surface of the device substrate is bonded to the handle substrate for forming the epitaxy substrate, wherein a bonding angle greater than 90° is provided between the bevel of the device substrate and the handle substrate, and a projection length of the bevel toward the handle substrate is between 600 μm and 800 μm.
ZIRCONIA SINTERED BODY
The present invention provides a zirconia sintered body that has less excess material to be removed when making a prosthesis by milling, providing a reduction of work time, more durability for a working tool, and a faster treatment for patients, and that undergoes little deformation during firing, and provides enhanced aesthetics. The present invention relates to a columnar zirconia sintered body having a base and a side face, the base having a surface shape that is neither square nor rectangular but has at least one straight portion.
METHOD FOR PRODUCING A CERAMIC COMPONENT COMPOSED OF A PLURALITY OF JOINED PREFORMS AND COMPONENT OBTAINED BY THE METHOD
A method for producing a component includes a) providing at least two preforms each made of a carbon composite material, b) joining the at least two preforms at least at one respective connecting surface to form a composite, in which a joining compound is introduced between the joining surfaces of the preforms and then cured and the joining compound contains silicon carbide and at least one polymer adhesive, and c) siliconizing the composite to form the component. A component, such as an optical component produced thereby, is also provided.