Implementations of semiconductor packages may include a metallic baseplate, a first insulative layer coupled to the metallic baseplate, a first plurality of metallic traces, each metallic trace of the first plurality of metallic traces coupled to the electrically insulative, one or more semiconductor devices coupled to each one of the first plurality of metallic traces, a second plurality of metallic traces coupled to the one or more semiconductor devices, and a second insulative layer coupled to the metallic traces of the second plurality of metallic traces.

A power electronic substrate includes a metallic baseplate having a first and second surface opposing each other. An electrically insulative layer also has first and second surfaces opposing each other, its first surface coupled to the second surface of the metallic baseplate. A plurality of metallic traces each include first and second surfaces opposing each other, their first surfaces coupled to the second surface of the electrically insulative layer. At least one of the metallic traces has a thickness measured along a direction perpendicular to the second surface of the metallic baseplate that is greater than a thickness of another one of the metallic traces also measured along a direction perpendicular to the second surface of the metallic baseplate. In implementations the electrically insulative layer is an epoxy or a ceramic material. In implementations the metallic traces are copper and are plated with a nickel layer at their second surfaces.

A method is described for assembling at least two parts made of silicon carbide based materials by non-reactive brazing in an oxidizing atmosphere, each of the parts comprising a surface to be assembled, wherein the parts are placed in contact with a non-reactive brazing composition, the assembly formed by the parts and the brazing composition is heated to a brazing temperature sufficient for completely or at least partially melting the brazing composition, or rendering the brazing composition viscous, and the parts and the brazing composition are cooled so as to form, after cooling the latter to ambient temperature, a moderately refractory joint. The non-reactive brazing composition is a composition A consisting of silica (SiO.sub.2), alumina (Al.sub.2O.sub.3), and calcium oxide (CaO), or a composition B consisting of alumina (Al.sub.2O.sub.3), calcium oxide (CaO), and magnesium oxide (MgO), and, before heating the assembly formed by the parts and the brazing composition to the brazing temperature, a supply of silicon in a non-oxidized form is carried out on the surfaces to be assembled of the parts to be assembled, and/or on the surface layers comprising the surfaces to be assembled of the parts to be assembled, and/or in the brazing composition.

A method for producing a component includes a) providing at least two preforms each made of a carbon composite material, b) joining the at least two preforms at least at one respective connecting surface to form a composite, in which a joining compound is introduced between the joining surfaces of the preforms and then cured and the joining compound contains silicon carbide and at least one polymer adhesive, and c) siliconizing the composite to form the component. A component, such as an optical component produced thereby, is also provided.

Provided herein are energy storage devices. In some cases, the energy storage devices are capable of being transported on a vehicle and storing a large amount of energy. An energy storage device is provided comprising at least one liquid metal electrode, an energy storage capacity of at least about 1 MWh and a response time less than or equal to about 100 milliseconds (ms).

Implementations of semiconductor packages may include a metallic baseplate, a first insulative layer coupled to the metallic baseplate, a first plurality of metallic traces, each metallic trace of the first plurality of metallic traces coupled to the electrically insulative, one or more semiconductor devices coupled to each one of the first plurality of metallic traces, a second plurality of metallic traces coupled to the one or more semiconductor devices, and a second insulative layer coupled to the metallic traces of the second plurality of metallic traces.

Ceramic welding methods and welded articles are disclosed. The present disclosure shows that transparent and diffuse ceramics can be successfully joined using lasers. The diffuse ceramic welding can be aided by introducing a small gap for optical penetration while no gap is necessary in the transparent ceramics case. Laser welding is more versatile on transparent ceramics since one can focus through the material allowing the joining of more complex geometries and over multiple interaction zones, increasing the ultimate weld volumes.

A power electronic substrate includes a metallic baseplate having a first and second surface opposing each other. An electrically insulative layer also has first and second surfaces opposing each other, its first surface coupled to the second surface of the metallic baseplate. A plurality of metallic traces each include first and second surfaces opposing each other, their first surfaces coupled to the second surface of the electrically insulative layer. At least one of the metallic traces has a thickness measured along a direction perpendicular to the second surface of the metallic baseplate that is greater than a thickness of another one of the metallic traces also measured along a direction perpendicular to the second surface of the metallic baseplate. In implementations the electrically insulative layer is an epoxy or a ceramic material. In implementations the metallic traces are copper and are plated with a nickel layer at their second surfaces.

A combination of a component and a composite, the composite having a) a PMC layer, and b) a tile layer comprising a plurality of Ox/Ox CMC tiles, each tile having: i) a central portion, ii) an outer portion and iii) one or more overlap joints formed by the overlapping of the outer portions of adjoining tiles so that hot gases entering a smooth top surface of the tile layer between abutting outer and central periphery segments must travel laterally between the overlapping outer portions of adjoining tiles to reach a top surface of the PMC layer. A method of heat shielding a component with a heat shielding composite comprising a) providing the composite and b) applying the composite to a surface of the component.

A combination of a component and a composite, the composite having a) a PMC layer, and b) a tile layer comprising a plurality of Ox/Ox CMC tiles, each tile having: i) a central portion, ii) an outer portion and iii) one or more overlap joints formed by the overlapping of the outer portions of adjoining tiles so that hot gases entering a smooth top surface of the tile layer between abutting outer and central periphery segments must travel laterally between the overlapping outer portions of adjoining tiles to reach a top surface of the PMC layer. A method of heat shielding a component with a heat shielding composite comprising a) providing the composite and b) applying the composite to a surface of the component.