The present invention provides a method of preparing bulk BSCCO-based material, the method comprising: mixing a first solution with a second solution at a pre-determined temperature to form a gel, wherein the first solution comprises salts of at least bismuth, strontium, calcium and copper and the second solution comprises a precipitating agent; drying the gel to form a xerogel; grinding the xerogel to form a homogeneous metalorganic precursor; and calcining the homogeneous metalorganic precursor to form bulk BSCCO-based materials. Further steps may enable preparation of 2D BSCCO flakes.

There are provided an oxide dielectric having excellent properties and a solid state electronic device (e.g., a capacitor, a semiconductor device, or a small electromechanical system) having such an oxide dielectric. An oxide layer 30 includes an oxide dielectric (possibly including inevitable impurities) including bismuth (Bi) and niobium (Nb) and having a first crystal phase of a pyrochlore-type crystal structure and a second crystal phase of a -BiNbO.sub.4-type crystal structure. The oxide layer 30 has a controlled content of the first crystal phase and a controlled content of the second crystal phase, in which the first crystal phase has a dielectric constant that decreases with increasing temperature of the oxide layer 30 in a temperature range of 25 C. or more and 120 C. or less, and the second crystal phase has a dielectric constant that increases with increasing temperature of the oxide layer 30 in the temperature range.

This disclosure relates to compounds of formula (I):

L.sub.nD.sub.m(B.sub.xB.sub.1-x).sub.r(Z.sub.tZ.sub.1-t).sub.qM.sub.pA.sub.y(I),

in which n, m, x, r, t, q, p, L, D, B, B, Z, Z, M, and A are defined in the specification. These compounds can exhibit superconductivity at a high temperature.

There are provided an oxide dielectric having excellent properties and a solid state electronic device (e.g., a capacitor, a semiconductor device, or a small electromechanical system) having such an oxide dielectric.

An oxide layer 30 includes an oxide dielectric (possibly including inevitable impurities) including bismuth (Bi) and niobium (Nb) and having a first crystal phase of a pyrochlore-type crystal structure and a second crystal phase of a -BiNbO.sub.4-type crystal structure. The oxide layer 30 has a controlled content of the first crystal phase and a controlled content of the second crystal phase, in which the first crystal phase has a dielectric constant that decreases with increasing temperature of the oxide layer 30 in a temperature range of 25 C. or more and 120 C. or less, and the second crystal phase has a dielectric constant that increases with increasing temperature of the oxide layer 30 in the temperature range.

This disclosure relates to compounds of formula (I):

L.sub.nD.sub.m(B.sub.xB.sub.1-x).sub.r(Z.sub.tZ.sub.1-t).sub.qM.sub.pA.sub.y(I)

in which n, m, x, r, t, q, p, L, D, B, B, Z, Z, M, and A are defined in the specification. These compounds can exhibit superconductivity at a high temperature.