Disclosed are embodiments of high Q modified materials. In some embodiments, complex tungsten oxides and/or hexagonal perovskite crystal structures can be added to provide for advantageous properties. In some embodiments, no tin is used in the formation of the material.

Disclosed are embodiments of high Q modified materials. In some embodiments, complex tungsten oxides and/or hexagonal perovskite crystal structures can be added to provide for advantageous properties. In some embodiments, no tin is used in the formation of the material.

A ceramic substrate is formed of polycrystalline ceramic and has a supporting main surface. At the supporting main surface of the ceramic substrate, the mean of grain sizes of the polycrystalline ceramic is 15 μm or more and less than 40 μm and the standard deviation of the grain sizes is less than 1.5 times the mean.

Disclosed herein are embodiments of low temperature co-fireable dielectric materials which can be used in conjunction with high dielectric materials to form composite structures, in particular for isolators and circulators for radiofrequency components. Embodiments of the low temperature co-fireable dielectric materials can be scheelite or garnet structures, for example, bismuth vanadate. Adhesives and/or glue is not necessary for the formation of the isolators and circulators.

Disclosed herein are embodiments of low temperature co-fireable dielectric materials which can be used in conjunction with high dielectric materials to form composite structures, in particular for isolators and circulators for radiofrequency components. Embodiments of the low temperature co-fireable dielectric materials can be scheelite or garnet structures, for example, bismuth vanadate. Adhesives and/or glue is not necessary for the formation of the isolators and circulators.

A lanthanum molybdenum composite oxide is provided. The lanthanum molybdenum composite oxide has a primary crystal phase formed of La.sub.2Mo.sub.2O.sub.9. The lanthanum molybdenum composite oxide also has a secondary crystal phase formed of a lanthanum molybdenum composite oxide species other than La.sub.2Mo.sub.2O.sub.9. The secondary crystal phase may contain at least one species selected from a group consisting of La.sub.2Mo.sub.3O.sub.12, La.sub.6MoO.sub.12, La.sub.7Mo.sub.7O.sub.30, La.sub.2Mo.sub.4O.sub.15, La.sub.2MoO.sub.6, La.sub.4MoO.sub.9, and LaMo.sub.2O.sub.5.

A piezoelectric material composition, a method of manufacturing the same, a piezoelectric device, and apparatus including the piezoelectric device. The piezoelectric device may include a piezoelectric device layer including a first material and a second material surrounded by the first material, a first electrode portion disposed at a first surface of the piezoelectric device layer, and a second electrode portion disposed at a second surface of the piezoelectric device layer opposite to the first surface, wherein the piezoelectric device layer comprises a piezoelectric material composition represented by Chemical Formula 1: 0.96(Na.sub.aK.sub.1-a)(Nb.sub.b(T.sub.1-b))O.sub.3-(0.04-x)MZrO.sub.3-x(Bi.sub.cAg.sub.1-c)ZrO.sub.3+d mol % NaNbO.sub.3, wherein T is Sb or Ta, M is Sr, Ba or Ca, a is 0.4≤a≤0.6, b is 0.90≤b≤0.98, c is 0.4≤c≤0.6, d is 0≤d≤5.0, and x is 0≤x≤0.04 and wherein T is Sb or Ta and M is Sr, Ba, or Ca.

A piezoelectric material composition, a method of manufacturing the same, a piezoelectric device, and apparatus including the piezoelectric device. The piezoelectric device may include a piezoelectric device layer including a first material and a second material surrounded by the first material, a first electrode portion disposed at a first surface of the piezoelectric device layer, and a second electrode portion disposed at a second surface of the piezoelectric device layer opposite to the first surface, wherein the piezoelectric device layer comprises a piezoelectric material composition represented by Chemical Formula 1: 0.96(Na.sub.aK.sub.1-a)(Nb.sub.b(T.sub.1-b))O.sub.3-(0.04-x)MZrO.sub.3-x(Bi.sub.cAg.sub.1-c)ZrO.sub.3+d mol % NaNbO.sub.3, wherein T is Sb or Ta, M is Sr, Ba or Ca, a is 0.4≤a≤0.6, b is 0.90≤b≤0.98, c is 0.4≤c≤0.6, d is 0≤d≤5.0, and x is 0≤x≤0.04 and wherein T is Sb or Ta and M is Sr, Ba, or Ca.

A light-emitting ceramic that includes a pyrochlore type compound that contains 0.01 mol % or more of Bi with respect to 100 mol % of the general formula M1.sub.XM2.sub.YM3.sub.ZO.sub.W, wherein M1 is at least one of La, Y, Gd, Yb, and Lu, M2 is at least one of Zr, Sn, and Hf, M3 is at least one of Ta, Nb, and Sb, X, Y, Z, and W are positive numbers that maintain electrical neutrality, X+Y+Z=2.0, 0.005≤Z≤0.2, and 3X+4Y+5Z is 7.02 or less.

A light-emitting ceramic that includes a pyrochlore type compound that contains 0.01 mol % or more of Bi with respect to 100 mol % of the general formula M1.sub.XM2.sub.YM3.sub.ZO.sub.W, wherein M1 is at least one of La, Y, Gd, Yb, and Lu, M2 is at least one of Zr, Sn, and Hf, M3 is at least one of Ta, Nb, and Sb, X, Y, Z, and W are positive numbers that maintain electrical neutrality, X+Y+Z=2.0, 0.005≤Z≤0.2, and 3X+4Y+5Z is 7.02 or less.