Patent classifications
C04B35/522
Production method incorporating particles containing silicon
A production method is provided in which submicronic particles containing silicon are incorporated into a matrix, wherein, during the incorporation of the particles, the particles are in a compacted state with a bulk density of more than 0.10 grams per cubic centimeter, and the compacted particles have a specific surface area at least 70% of that of the particles considered separately without contact between each other.
Process for rapid processing of SiC and graphitic matrix triso-bearing pebble fuels
A method for producing microencapsulated fuel pebble fuel more rapidly and with a matrix that engenders added safety attributes. The method includes coating fuel particles with ceramic powder; placing the coated fuel particles in a first die; applying a first current and a first pressure to the first die so as to form a fuel pebble by direct current sintering. The method may further include removing the fuel pebble from the first die and placing the fuel pebble within a bed of non-fueled matrix ceramic in a second die; and applying a second current and a second pressure to the second die so as to form a composite fuel pebble.
Tantalum carbide coated carbon material, manufacturing method thereof, and member for apparatus for manufacturing semiconductor single crystal
A member for an apparatus for manufacturing a semiconductor single crystal having long product life and a tantalum carbide coated carbon material are provided. The tantalum carbide coated carbon material according to the present invention is a tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, in which in the tantalum carbide coated film, an intensity of an X-ray diffraction line corresponding to a plane with respect to an out-of-plane direction is larger than intensities of X-ray diffraction lines corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes.
Tantalum carbide coated carbon material, manufacturing method thereof, and member for apparatus for manufacturing semiconductor single crystal
A member for an apparatus for manufacturing a semiconductor single crystal having long product life and a tantalum carbide coated carbon material are provided. The tantalum carbide coated carbon material according to the present invention is a tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, in which in the tantalum carbide coated film, an intensity of an X-ray diffraction line corresponding to a plane with respect to an out-of-plane direction is larger than intensities of X-ray diffraction lines corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes.
Process for Making Densified Carbon Articles by Three Dimensional Printing
Methods for making densified carbon printed articles from carbon powder are described. Three-dimensional binder jet printing is used to make a printed article from the carbon powder. The printed articles are infiltrated with pitch and may be heated to graphitize at least a portion of the pitch to provide a near net shape densified carbon printed article.
SiC-COATED CARBON COMPOSITE MATERIAL
Provided is a SiC-coated carbon composite material including a graphite base material and a CVD-SiC coating covering the graphite base material. A porosity of a core part of the graphite base material is 12 to 20%, and a SiC-infiltrated layer extending from the CVD-SiC coating is included in a periphery of the core part of the graphite base material. The SiC-infiltrated layer is constituted of a plurality of regions arranged such that Si content becomes smaller stepwise in an order from a first surface on the CVD-SiC coating side toward a second surface on the graphite base material side.
SiC-COATED CARBON COMPOSITE MATERIAL
Provided is a SiC-coated carbon composite material including a graphite base material and a CVD-SiC coating covering the graphite base material. A porosity of a core part of the graphite base material is 12 to 20%, and a SiC-infiltrated layer extending from the CVD-SiC coating is included in a periphery of the core part of the graphite base material. The SiC-infiltrated layer is constituted of a plurality of regions arranged such that Si content becomes smaller stepwise in an order from a first surface on the CVD-SiC coating side toward a second surface on the graphite base material side.
ARTIFICIAL GRAPHITE FLAKE MANUFACTURING METHOD AND PRODUCT THEREOF
The present invention discloses an artificial graphite flake manufacturing method, which uses the PI (polyimide) films as the material; via a stacking step, a first heating step and a second heating step, the PI films are processed to form the artificial graphite flakes so as to increase the lubrication and the hardness, improve the heat conduction for balancing temperature increase and better the smoothness; in addition, via a perforation step, a hole structure is formed on the artificial graphite flakes so as to increase the heat diffusion area and the air permeability of the artificial graphite flakes, and then increase the defect-free rate and the smoothness thereof.
Tantalum carbide coated carbon material
The present invention relates to a tantalum carbide coated carbon material, and more particularly, to a tantalum carbide coated carbon material including a tantalum carbide film having a surface contact angle of 50° or more and low surface energy.
Tantalum carbide coated carbon material
The present invention relates to a tantalum carbide coated carbon material, and more particularly, to a tantalum carbide coated carbon material including a tantalum carbide film having a surface contact angle of 50° or more and low surface energy.