Patent classifications
C04B35/575
Method for molding ceramic material, method for producing ceramic article, and ceramic article
A method for molding a ceramic material includes: mixing a ceramic powder, a resin, a curing agent and a solvent to obtain a raw material slurry for a ceramic material; injecting the raw material slurry into an elastic container; curing the resin in the raw material slurry injected into the elastic container to form a molded body having a desired shape; and demolding the molded body from the elastic container.
Method for molding ceramic material, method for producing ceramic article, and ceramic article
A method for molding a ceramic material includes: mixing a ceramic powder, a resin, a curing agent and a solvent to obtain a raw material slurry for a ceramic material; injecting the raw material slurry into an elastic container; curing the resin in the raw material slurry injected into the elastic container to form a molded body having a desired shape; and demolding the molded body from the elastic container.
PREPARATION METHOD FOR ALUMINA/TITANIUM SILICON CARBIDE COMPOSITE MATERIAL
An alumina/titanium silicon carbide composite material is prepared by making titanium aluminum carbide (Ti.sub.3AlC.sub.2) in uniform contact with silicon monoxide (SiO), and carrying out vacuum sintering. The composite material is obtained through mutual diffusion of aluminum and silicon and has high compactness and stable performance. In the composite material, the alumina is generated by means of a reaction between the titanium aluminum carbide and the silicon monoxide, and can be uniformly wrapped around surfaces of titanium silicon carbide crystals to form a relatively compact oxide film, such that substance exchange between a matrix and the outside is hindered, and overall antioxidation of the composite material is improved. Toughness of the composite material is enhanced by means of the titanium silicon carbide. The prepared composite material has relatively high purity, relatively low sintering temperature, and relatively high bending strength. The process is simple and convenient for industrial production.
PREPARATION METHOD FOR ALUMINA/TITANIUM SILICON CARBIDE COMPOSITE MATERIAL
An alumina/titanium silicon carbide composite material is prepared by making titanium aluminum carbide (Ti.sub.3AlC.sub.2) in uniform contact with silicon monoxide (SiO), and carrying out vacuum sintering. The composite material is obtained through mutual diffusion of aluminum and silicon and has high compactness and stable performance. In the composite material, the alumina is generated by means of a reaction between the titanium aluminum carbide and the silicon monoxide, and can be uniformly wrapped around surfaces of titanium silicon carbide crystals to form a relatively compact oxide film, such that substance exchange between a matrix and the outside is hindered, and overall antioxidation of the composite material is improved. Toughness of the composite material is enhanced by means of the titanium silicon carbide. The prepared composite material has relatively high purity, relatively low sintering temperature, and relatively high bending strength. The process is simple and convenient for industrial production.
Assembly for chemical vapor infiltration of a fiber preform and method of infiltrating a fiber preform
A method of infiltrating a fiber preform comprises positioning an assembly in a process chamber, where the assembly includes a tool comprising through-holes, a fiber preform constrained within the tool, and a sacrificial preform disposed between the fiber preform and the tool. The sacrificial preform is gas permeable. The process chamber is heated, and gaseous reactants are delivered into the process chamber during the heating. The gaseous reactants penetrate the through-holes of the tool and infiltrate the sacrificial preform and the fiber preform. Deposition of reaction products occurs on exposed surfaces of the fiber preform and the sacrificial preform, and a coating is formed thereon. In addition, the sacrificial preform accumulates excess coating material formed from increased reactions at short diffusion depths. Accordingly, the coating formed on the fiber preform exhibits a thickness variation of about 10% or less throughout a volume of the fiber preform.
Methods of extracting volatiles from ceramic green bodies
Methods of producing a ceramic article include heating the ceramic green body containing a quantity of one or more organic materials to extract only a fraction of the organic materials from the ceramic green body by exposing the ceramic green body to a process atmosphere which is heated to a hold temperature of from 225° C. to about 400° C. and has from 2% to 7% O.sub.2 by volume of the process atmosphere. The method further includes cooling the ceramic green body to a temperature of below 200° C., exposing the ceramic green body to a higher concentration of O.sub.2 than in the process atmosphere of the heating step, and firing the ceramic green body to form the ceramic article. Volatile extraction units for implementing the methods are also described.
INTEGRATED IN-VESSEL NEUTRON SHIELD
To reduce size and mass of a nuclear reactor system, an integrated in-vessel shield separates the role of a neutron reflector and a neutron shield. Nuclear reactor system includes a pressure vessel including an interior wall and a nuclear reactor core located within the interior wall of the pressure vessel. Nuclear reactor core includes a plurality of fuel elements and at least one moderator element. Nuclear reactor system includes a reflector located inside the pressure vessel that includes a plurality of reflector blocks laterally surrounding the plurality of fuel elements and the at least one moderator element. Nuclear reactor system includes the in-vessel shield located on the interior wall of the pressure vessel to surround the reflector blocks. In-vessel shield is formed of two or more neutron absorbing materials. The two more neutron absorbing materials include a near black neutron absorbing material and a gray neutron absorbing material.
INTEGRATED IN-VESSEL NEUTRON SHIELD
To reduce size and mass of a nuclear reactor system, an integrated in-vessel shield separates the role of a neutron reflector and a neutron shield. Nuclear reactor system includes a pressure vessel including an interior wall and a nuclear reactor core located within the interior wall of the pressure vessel. Nuclear reactor core includes a plurality of fuel elements and at least one moderator element. Nuclear reactor system includes a reflector located inside the pressure vessel that includes a plurality of reflector blocks laterally surrounding the plurality of fuel elements and the at least one moderator element. Nuclear reactor system includes the in-vessel shield located on the interior wall of the pressure vessel to surround the reflector blocks. In-vessel shield is formed of two or more neutron absorbing materials. The two more neutron absorbing materials include a near black neutron absorbing material and a gray neutron absorbing material.
METHODS OF FORMING SILICON CARBIDE BY SPARK PLASMA SINTERING, METHODS OF FORMING ARTICLES INCLUDING SILICON CARBIDE BY SPARK PLASMA SINTERING, AND RELATED STRUCTURES
A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50° C./min and about 200° C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.
METHODS OF FORMING SILICON CARBIDE BY SPARK PLASMA SINTERING, METHODS OF FORMING ARTICLES INCLUDING SILICON CARBIDE BY SPARK PLASMA SINTERING, AND RELATED STRUCTURES
A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50° C./min and about 200° C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.