Provided are a composite material that has lower volume resistivity in comparison with SiC, SiC—Si, and the like, which are materials for forming constituent elements of an EHC, has low temperature dependence of volume resistivity, and thus is able to form a constituent element of a high-performance EHC; an electrode film, an electrode terminal, and a honeycomb substrate that are constituent elements of an EHC formed with such composite material, and a method for producing them. The composite material contains MoSi.sub.2 and at least one of Si or SiC, and is a material for forming a constituent element of an electrically heated catalytic converter. An electrode film 2, an electrode terminal 3, and a substrate 1 are produced from such composite material.

Disclosed herein are compounds, methods, and tools which comprise tungsten borides and mixed transition metal borides.

Particles of a refractory metal or a refractory-metal compound capable of decomposing or reacting into refractory-metal nanoparticles, elemental silicon, and an organic compound having a char yield of at least 60% by weight are combined to form a precursor mixture. The mixture is heating, forming a thermoset and/or metal nanoparticles. Further heating form a composition having nanoparticles of a refractory-metal silicide and a carbonaceous matrix. The composition is not in the form of a powder

A process of manufacturing a chromium alloyed molybdenum silicide portion of a heating element comprising the steps of: forming a mixture of a chromium powder and a silicon powder; reacting the mixture to a reaction product in an inert atmosphere at a temperature of at least 1100° C. but not more than 1580° C.; converting the reaction product to a powder comprising CrSi.sub.2; forming a powder ceramic composition by mixing the powder comprising CrSi.sub.2 with a MoSi.sub.2 powder and optionally with an extrusion aid; forming the portion of the heating element; and sintering the portion of the heating element in a temperature of from about 1450° C. to about 1700° C.; characterized in that the chromium powder and the silicon powder are provided separately to the mixture.

electrically conductive honeycomb body that includes a porous honeycomb structure including a plurality of intersecting porous walls arranged to provide a matrix of cells, the porous walls including wall surfaces that define a plurality of channels extending from an inlet end to an outlet end of the structure. The porous walls include ceramic composite material that includes at least one carbide phase and at least one silicide phase, each carbide and silicide phase including one or more metals selected from the group consisting of Si, Mo, Ti, Zr and W.

electrically conductive honeycomb body that includes a porous honeycomb structure including a plurality of intersecting porous walls arranged to provide a matrix of cells, the porous walls including wall surfaces that define a plurality of channels extending from an inlet end to an outlet end of the structure. The porous walls include ceramic composite material that includes at least one carbide phase and at least one silicide phase, each carbide and silicide phase including one or more metals selected from the group consisting of Si, Mo, Ti, Zr and W.

Particles of a refractory metal or a refractory-metal compound capable of decomposing or reacting into refractory-metal nanoparticles, elemental silicon, and an organic compound having a char yield of at least 60% by weight are combined to form a precursor mixture. The mixture is heating, forming a thermoset and/or metal nanoparticles. Further heating form a composition having nanoparticles of a refractory-metal silicide and a carbonaceous matrix. The composition is not in the form of a powder

An object shaping method includes a step of forming a powder layer using first powder, a step of placing second powder having an average particle diameter smaller than an average particle diameter of the first powder at a part of a region of the powder layer, and a first heating step of heating the powder layer in which the second powder is placed. The average particle diameter is equal to or larger than 1 nm and equal to or smaller than 500 nm, and the first heating step performs heating the powder layer at a temperature at which particles contained in the second powder are sintered or melted.

The present application discloses a contact, which comprises a contact opening, and a Ti layer, a glue layer and a tungsten layer which completely fill the contact opening; the Ti layer is subjected to annealing treatment; the tungsten layer comprises a tungsten seed layer and a tungsten body layer; the glue layer consists of a TiN layer which is divided into a plurality of TiN sub-layers, all or part of the TiN sub-layers are subjected to the annealing treatment, and the size of grains of the TiN sub-layer subjected to the annealing treatment is limited by the thickness of the corresponding TiN sub-layer. The present application further discloses a method for making a contact. The present application can prevent the annealing treatment of the TiSi layer from producing large lattice grains in the glue layer, thus can make the tungsten seed layer be a continuous structure.

An object of the present invention is to provide a high-density Cr—Si—C-based sintered body including chromium (Cr), silicon (Si) and carbon (C) and is furthermore to provide at least one of the high-density Cr—Si—C-based sintered body, a sputtering target including the sintered body or a method for producing a film using the sputtering target. The present invention can provide a Cr—Si—C-based sintered body including chromium (Cr), silicon (Si) and carbon (C), wherein the sintered body has a relative density of 90% or more and a porosity of 13% or less.