A binder for an injection moulding composition, the binder includes, in percentage by mass and for a total of 100%: 35% to 60% of a component (a), or polymer base, made of a polymer or a mixture of polymers, each of the polymer being non-amphiphilic and having a mass average molar mass greater than or equal to 5,000 g/mol, 30% to 55% of a component (b), or wax, made of a polymer or a mixture of polymers, each of the polymer being non-amphiphilic and having a mass average molar mass less than 5,000 g/mol, and less than 10% of an amphiphilic component (c), or surfactant, and less than 10% of other components (d). The polymer base comprising 2% to 15% of a styrene-ethylene-butylene-styrene copolymer (SEBS), in percentage by mass based on the mass of the binder.

It is an object to provide a ferroelectric thin film having much higher ferroelectric properties than conventional Sc-doped ferroelectric thin film constituted by aluminum nitride and also having stability when applied to practical use, and also to provide an electronic device using the same.

There are provided a ferroelectric thin film represented by a chemical formula M1.sub.1-XM2.sub.XN, wherein M1 is at least one element selected from Al and Ga, M2 is at least one element selected from Mg, Sc, Yb, and Nb, and X is within a range of 0 or more and 1 or less, and also an electronic device using the same.

A substrate support structure includes a substrate support structure body formed from a ceramic composite and having a first surface, a second surface spaced apart from the first surface, and a periphery spanning the first surface and the second surface of the substrate support structure body. The first surface, the second surface, and the periphery of the substrate support structure body are defined by the ceramic composite. The ceramic composite includes two or more of a (a) an aluminum nitride (AlN) constituent, (b) an aluminum oxynitride (Al.sub.2.81O.sub.3.56N.sub.0.44, AlON) constituent, (c) an alpha-alumina (α-Al.sub.2O.sub.3) constituent, (d) a yttrium alumina garnet (Y.sub.3Al.sub.5O.sub.12, YAG) constituent, (e) a yttrium alumina monoclinic (Y.sub.4Al.sub.2O.sub.9, YAM) constituent, (f) a yttrium alumina perovskite (YAlO.sub.3, YAP) constituent, and (g) a yttrium oxide (Y.sub.2O.sub.3) constituent. Semiconductor processing systems and methods of making substrate support structures are also described.

A substrate support structure includes a substrate support structure body formed from a ceramic composite and having a first surface, a second surface spaced apart from the first surface, and a periphery spanning the first surface and the second surface of the substrate support structure body. The first surface, the second surface, and the periphery of the substrate support structure body are defined by the ceramic composite. The ceramic composite includes two or more of a (a) an aluminum nitride (AlN) constituent, (b) an aluminum oxynitride (Al.sub.2.81O.sub.3.56N.sub.0.44, AlON) constituent, (c) an alpha-alumina (α-Al.sub.2O.sub.3) constituent, (d) a yttrium alumina garnet (Y.sub.3Al.sub.5O.sub.12, YAG) constituent, (e) a yttrium alumina monoclinic (Y.sub.4Al.sub.2O.sub.9, YAM) constituent, (f) a yttrium alumina perovskite (YAlO.sub.3, YAP) constituent, and (g) a yttrium oxide (Y.sub.2O.sub.3) constituent. Semiconductor processing systems and methods of making substrate support structures are also described.

Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

The present disclosure relates to a mold for glass forming, wherein the mold comprises a ceramic material, and wherein the ceramic material comprises aluminum nitride and hexagonal boron nitride, and wherein the ceramic material comprises from 50 to 80% by weight of aluminum nitride and from 20 to 50% by weight of hexagonal boron nitride, based on the total weight of the ceramic material. The present disclosure further relates to a process for using such molds to form curved glass plates.

The present disclosure relates to a mold for glass forming, wherein the mold comprises a ceramic material, and wherein the ceramic material comprises aluminum nitride and hexagonal boron nitride, and wherein the ceramic material comprises from 50 to 80% by weight of aluminum nitride and from 20 to 50% by weight of hexagonal boron nitride, based on the total weight of the ceramic material. The present disclosure further relates to a process for using such molds to form curved glass plates.

Disclosed herein is a chemical vapor infiltration method including flowing ceramic precursors through a preform and depositing a matrix material on the preform at a first gas infiltration pressure, increasing the gas filtration pressure to a second gas infiltration pressure, and lowering the gas infiltration pressure to a third gas infiltration pressure which is intermediate to the first and second gas infiltration pressures.

A ceramic composite and a method of preparing the same are provided. The method of preparing the ceramic composite includes mixing an aluminum slag and a carbon accelerator to obtain a mixture and reacting the mixture at a temperature equal to or greater than 1600° C. in a nitrogen atmosphere to obtain a ceramic composite. The aluminum slag includes aluminum, oxygen, nitrogen, and magnesium. The weight ratio of the oxygen to the aluminum is 0.6 to 2. The weight ratio of the nitrogen to the aluminum is 0.1 to 1.2. The weight ratio of the magnesium to the aluminum is 0.04 to 0.2. The ceramic composite includes aluminum nitride accounting for at least 90 wt % of the ceramic composite.