C04B35/584

Silicon compositions containing boron and methods of forming the same
11578008 · 2023-02-14 · ·

A composition is generally provided that includes a silicon-containing material (e.g., silicon metal and/or a silicide) and a boron-doped refractory compound, such as about 0.001% to about 85% by volume of the boron-doped refractory compound (e.g., about 1% to about 60% by volume). In one embodiment, a bond coating on a surface of a ceramic component is generally provided with the bond coating including such a composition, with the silicon-containing material is silicon metal.

Silicon compositions containing boron and methods of forming the same
11578008 · 2023-02-14 · ·

A composition is generally provided that includes a silicon-containing material (e.g., silicon metal and/or a silicide) and a boron-doped refractory compound, such as about 0.001% to about 85% by volume of the boron-doped refractory compound (e.g., about 1% to about 60% by volume). In one embodiment, a bond coating on a surface of a ceramic component is generally provided with the bond coating including such a composition, with the silicon-containing material is silicon metal.

MULTI-ENVIRONMENTAL BARRIER COATING, PROCESSES FOR COATING ARTICLES, AND THEIR COATED ARTICLES

A coated article including an article having a surface; an oxidation resistant bond coat layer deposited on the surface, the oxidation resistant bond coat layer comprising a metal silicide phase, a crystalline ceramic phase and an amorphous ceramic phase, wherein the metal silicide phase has an aspect ratio greater than 1:1 but less than 50:1.

MULTI-ENVIRONMENTAL BARRIER COATING, PROCESSES FOR COATING ARTICLES, AND THEIR COATED ARTICLES

A coated article including an article having a surface; an oxidation resistant bond coat layer deposited on the surface, the oxidation resistant bond coat layer comprising a metal silicide phase, a crystalline ceramic phase and an amorphous ceramic phase, wherein the metal silicide phase has an aspect ratio greater than 1:1 but less than 50:1.

HIGH THERMAL CONDUCTIVE SILICON NITRIDE SINTERED BODY, AND SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD AND SEMICONDUCTOR APPARATUS USING THE SAME

The present invention provides a high thermal conductive silicon nitride sintered body having a thermal conductivity of 50 W/m.Math.K or more and a three-point bending strength of 600 MPa or more, wherein when an arbitrary cross section of the silicon nitride sintered body is subjected to XRD analysis and highest peak intensities detected at diffraction angles of 29.3±0.2°, 29.7±0.2°, 27.0±0.2°, and 36.1±0.2° are expressed as I.sub.29.3°, I.sub.29.7°, I.sub.27.0°, and I.sub.36.1°, a peak ratio (I.sub.29.3°)/(I.sub.27.0°+I.sub.36.1°) satisfies a range of 0.01 to 0.08, and a peak ratio (I.sub.29.7°)/(I.sub.27.0°+I.sub.36.1°) satisfies a range of 0.02 to 0.16. Due to above configuration, there can be provided a silicon nitride sintered body having a high thermal conductivity of 50 W/m.Math.K or more, and excellence in insulating properties and strength.

HIGH THERMAL CONDUCTIVE SILICON NITRIDE SINTERED BODY, AND SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD AND SEMICONDUCTOR APPARATUS USING THE SAME

The present invention provides a high thermal conductive silicon nitride sintered body having a thermal conductivity of 50 W/m.Math.K or more and a three-point bending strength of 600 MPa or more, wherein when an arbitrary cross section of the silicon nitride sintered body is subjected to XRD analysis and highest peak intensities detected at diffraction angles of 29.3±0.2°, 29.7±0.2°, 27.0±0.2°, and 36.1±0.2° are expressed as I.sub.29.3°, I.sub.29.7°, I.sub.27.0°, and I.sub.36.1°, a peak ratio (I.sub.29.3°)/(I.sub.27.0°+I.sub.36.1°) satisfies a range of 0.01 to 0.08, and a peak ratio (I.sub.29.7°)/(I.sub.27.0°+I.sub.36.1°) satisfies a range of 0.02 to 0.16. Due to above configuration, there can be provided a silicon nitride sintered body having a high thermal conductivity of 50 W/m.Math.K or more, and excellence in insulating properties and strength.

ION BEAM SPUTTERING WITH ION ASSISTED DEPOSITION FOR COATINGS ON CHAMBER COMPONENTS

An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide film is selected from a group consisting of an Er—Y composition, an Er—Al—Y composition, an Er—Y—Zr composition, and an Er—Al composition.

ION BEAM SPUTTERING WITH ION ASSISTED DEPOSITION FOR COATINGS ON CHAMBER COMPONENTS

An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide film is selected from a group consisting of an Er—Y composition, an Er—Al—Y composition, an Er—Y—Zr composition, and an Er—Al composition.

BINDER FOR INJECTION MOULDING COMPOSITION

A binder for an injection moulding composition, the binder includes, in percentage by mass and for a total of 100%: 35% to 60% of a component (a), or polymer base, made of a polymer or a mixture of polymers, each of the polymer being non-amphiphilic and having a mass average molar mass greater than or equal to 5,000 g/mol, 30% to 55% of a component (b), or wax, made of a polymer or a mixture of polymers, each of the polymer being non-amphiphilic and having a mass average molar mass less than 5,000 g/mol, and less than 10% of an amphiphilic component (c), or surfactant, and less than 10% of other components (d). The polymer base comprising 2% to 15% of a styrene-ethylene-butylene-styrene copolymer (SEBS), in percentage by mass based on the mass of the binder.

Ion beam sputtering with ion assisted deposition for coatings on chamber components

An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide film consists essentially of 40 mol % to less than 100 mol % of Y.sub.2O.sub.3, over 0 mol % to 60 mol % of ZrO.sub.2, and 0 mol % to 9 mol % of Al.sub.2O.sub.3.