A sintered body includes a crystal grain containing silicon nitride, and a grain boundary phase. If dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value ε.sub.A of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value ε.sub.B of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |ε.sub.A−ε.sub.B|≤0.1.

A sintered body includes a crystal grain containing silicon nitride, and a grain boundary phase. If dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value ε.sub.A of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value ε.sub.B of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |ε.sub.A−ε.sub.B|≤0.1.

Provided is a method for producing a β-sialon fluorescent material, comprising preparing a composition containing a silicon nitride that contains aluminium, oxygen, and europium; heat-treating the composition at a temperature in a range of 1300° C. or more and 1600° C. or less to obtain a heat-treated product; subjecting the heat-treated product to a temperature-decrease of from the heat treatment temperature to 1000° C. as a first temperature-decrease step; and subjecting the heat-treated product to a temperature-decrease of from 1000° C. to 400° C. as a second temperature-decrease step. The first temperature-decrease step has a temperature-decrease rate in a range of 1.5° C./min or more and 200° C./min or less, and the second temperature-decrease step has a temperature-decrease rate in a range of 1° C./min or more and 200° C./min or less.

Provided is a method for producing a β-sialon fluorescent material, comprising preparing a composition containing a silicon nitride that contains aluminium, oxygen, and europium; heat-treating the composition at a temperature in a range of 1300° C. or more and 1600° C. or less to obtain a heat-treated product; subjecting the heat-treated product to a temperature-decrease of from the heat treatment temperature to 1000° C. as a first temperature-decrease step; and subjecting the heat-treated product to a temperature-decrease of from 1000° C. to 400° C. as a second temperature-decrease step. The first temperature-decrease step has a temperature-decrease rate in a range of 1.5° C./min or more and 200° C./min or less, and the second temperature-decrease step has a temperature-decrease rate in a range of 1° C./min or more and 200° C./min or less.

A cutting tool (1) formed of a silicon nitride-based sintered body (2) including a matrix phase (3), a hard phase (4), and a grain boundary phase (10) in which a glass phase (11) and a crystal phase (12) exist. The sintered body (2) contains yttrium in an amount of 5.0 wt % to 15.0 wt % in terms of an oxide, and contains titanium nitride as the hard phase (4) in an amount of 5.0 wt % to 25.0 wt %. In an X-ray diffraction peak, a halo pattern appears at 2θ ranging from 25° to 35° in an internal region of the sintered body (2). A ratio B/A of a maximum peak intensity B to a maximum peak intensity A satisfies 0.11≤B/A≤0.40 . . . Expression (1) in a surface region of the sintered body (2), and satisfies 0.00≤B/A≤0.10 . . . Expression (2) in the internal region of the sintered body (2).

A cutting tool (1) formed of a silicon nitride-based sintered body (2) including a matrix phase (3), a hard phase (4), and a grain boundary phase (10) in which a glass phase (11) and a crystal phase (12) exist. The sintered body (2) contains yttrium in an amount of 5.0 wt % to 15.0 wt % in terms of an oxide, and contains titanium nitride as the hard phase (4) in an amount of 5.0 wt % to 25.0 wt %. In an X-ray diffraction peak, a halo pattern appears at 2θ ranging from 25° to 35° in an internal region of the sintered body (2). A ratio B/A of a maximum peak intensity B to a maximum peak intensity A satisfies 0.11≤B/A≤0.40 . . . Expression (1) in a surface region of the sintered body (2), and satisfies 0.00≤B/A≤0.10 . . . Expression (2) in the internal region of the sintered body (2).

Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

Provided is a method for producing a wavelength conversion sintered body that emits light under irradiation of excitation light. The method for producing a wavelength conversion sintered body includes: preparing a molded body obtained by molding a mixture containing an α-SiAlON fluorescent material and aluminum oxide particles and having a content of Ga of 15 ppm by mass or less; and primary calcining the molded body at a temperature in a range of 1,370° C. or more and 1,600° C. or less to obtain a first sintered body.

A force-transmitting assembly includes a metal shaft having at least two longitudinally-extending grooves defined in an outer surface, and a metal hub having at least two longitudinally-extending grooves defined in an inner surface that surrounds the outer surface of the shaft. A plurality of discrete parts is disposed in the at least two longitudinally-extending grooves of the shaft and the hub in an interference-fit manner so as to transmit a torque from the shaft to the hub. Each of the discrete parts is composed of at least 50 mass % of technical ceramic selected from Si.sub.3N.sub.4, SiAlON, Al.sub.2O.sub.3, ZrO.sub.2, or a mixture of two or more of Si.sub.3N.sub.4, SiAlON, Al.sub.2O.sub.3, and ZrO.sub.2.