Embodiments relate to an improved hydroflux assisted densification process that introduces a transport phase (formed by the introduction of water during the process to suppress melting temperatures) for sintering, the transport phase being a non-aqueous solution. The process can facilitate sintering at low temperature ranges (at or below 300° C.) to yield densification>90% without the need for additional post-processing steps that otherwise would be needed if conventional processes were used. Control of the pressures and water content used during the process can enhance densification mechanisms related to dissolution-reprecipitation, allowing for a greater range of compositional spectra of materials that can be densified, a reduction of the amount of transport phase needed, a reduction of impurities and an improvement of properties in the densified material. Certain hydrated acetate powders can be used to generate a hydroxide mixture flux that is better for the low-temperature densification process.

Embodiments relate to an improved hydroflux assisted densification process that introduces a transport phase (formed by the introduction of water during the process to suppress melting temperatures) for sintering, the transport phase being a non-aqueous solution. The process can facilitate sintering at low temperature ranges (at or below 300° C.) to yield densification>90% without the need for additional post-processing steps that otherwise would be needed if conventional processes were used. Control of the pressures and water content used during the process can enhance densification mechanisms related to dissolution-reprecipitation, allowing for a greater range of compositional spectra of materials that can be densified, a reduction of the amount of transport phase needed, a reduction of impurities and an improvement of properties in the densified material. Certain hydrated acetate powders can be used to generate a hydroxide mixture flux that is better for the low-temperature densification process.

A material for 3D printing is described. The material comprises a polymeric composition comprising a thermoplastic polymer; and from 50 to 99 wt. % ceramic particles comprising a metal, wherein at least 50% by weight of the particles have a diameter in a range from 10 to 100 μm; wherein the material has a dielectric strength of at least 5 kV/mm and/or a dielectric constant of at least 5.

It is demanded that a LTCC substrate composition capable of maintaining low relative permittivity k and high Q value without having a reactivity with a silver which is an electrode material and causing migration of the silver during a co-firing operation at a low temperature. Provided with a low temperature co-fired substrate composition containing 83 to 91 wt. % of CaO-B.sub.2O.sub.3-SiO.sub.2 based glass powder, 7.5 to 14 wt. % of two or more kinds of nanometer-sized SiO.sub.2 powders having different ranges of particle diameter and 1.5 to 3 wt. % of β-wollastonite powder as a crystallization agent wherein the glass powder contains 40.0 to 45.0 wt. % of CaO, 9.0 to 20.0 wt. % of B.sub.2O.sub.3 and 40.0 to 46.0 wt. % of SiO.sub.2.

An antiballistic armor-plating component, includes a ceramic body made of a material comprising, as percentages by volume, between 35% and 55% of silicon carbide, between 20% and 50% of boron carbide, between 15% and 35% of a metallic silicon phase or of a metallic phase including silicon.

An antiballistic armor-plating component, includes a ceramic body made of a material comprising, as percentages by volume, between 35% and 55% of silicon carbide, between 20% and 50% of boron carbide, between 15% and 35% of a metallic silicon phase or of a metallic phase including silicon.

A method of making an implantable device includes directing a projection of laser energy having a plurality of adjacent energy pixels on a build surface atop a bed of powder, thereby forming a layer of the implantable device. The directing step is repeated a plurality of times, in a layer-by-layer manner, such that a totality of the formed layers define at least a portion of the implantable device.

A process for the manufacture of a refractory block including more than 80% zirconia, in percentage by weight based on the oxides. The process includes the following successive stages: melting, under reducing conditions, of a charge including more than 50% zircon, in percentage by weight, such as to reduce the zircon and obtain a molten material, application of oxidizing conditions to the molten material, casting of the molten material, and cooling until at least partial solidification of the molten material in the form of a block. Also, the process can include heat treatment of the block.

Provided is an article that includes silicon carbide as a main component and that has sufficient mechanical strength while manufactured by a three-dimensional shaping technology. The article that includes silicon carbide as a main component includes: silicon carbide; a metal boride having a melting point lower than a sublimation point of silicon carbide; and metal silicon.

The disclosure relates to sintered ceramic grains comprising 3-55 wt. % alumina, 40-95 wt. % zirconia and 1-30 wt. % of one or more other inorganic components. The invention further relates to a method for preparing ceramic grains according to the invention, comprising: making a slurry comprising alumina, zirconia; making droplets of the slurry; introducing the droplets in a liquid gelling-reaction medium wherein the droplets are gellified; drying the gellified deformed droplets.