A member for an apparatus for manufacturing a semiconductor single crystal having long product life and a tantalum carbide coated carbon material are provided. The tantalum carbide coated carbon material according to the present invention is a tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, in which in the tantalum carbide coated film, an intensity of an X-ray diffraction line corresponding to a plane with respect to an out-of-plane direction is larger than intensities of X-ray diffraction lines corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes.

A member for an apparatus for manufacturing a semiconductor single crystal having long product life and a tantalum carbide coated carbon material are provided. The tantalum carbide coated carbon material according to the present invention is a tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, in which in the tantalum carbide coated film, an intensity of an X-ray diffraction line corresponding to a plane with respect to an out-of-plane direction is larger than intensities of X-ray diffraction lines corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes.

Provided is a SiC-coated carbon composite material including a graphite base material and a CVD-SiC coating covering the graphite base material. A porosity of a core part of the graphite base material is 12 to 20%, and a SiC-infiltrated layer extending from the CVD-SiC coating is included in a periphery of the core part of the graphite base material. The SiC-infiltrated layer is constituted of a plurality of regions arranged such that Si content becomes smaller stepwise in an order from a first surface on the CVD-SiC coating side toward a second surface on the graphite base material side.

Provided is a SiC-coated carbon composite material including a graphite base material and a CVD-SiC coating covering the graphite base material. A porosity of a core part of the graphite base material is 12 to 20%, and a SiC-infiltrated layer extending from the CVD-SiC coating is included in a periphery of the core part of the graphite base material. The SiC-infiltrated layer is constituted of a plurality of regions arranged such that Si content becomes smaller stepwise in an order from a first surface on the CVD-SiC coating side toward a second surface on the graphite base material side.

Provided are a SmFeN magnetic powder which is superior not only in water resistance and corrosion resistance but also in hot water resistance, and a method of preparing the powder. The present invention relates to a method of preparing a magnetic powder, comprising: plasma-treating a gas; surface-treating a SmFeN magnetic powder with the plasma-treated gas; and forming a coat layer on the surface of the surface-treated SmFeN magnetic powder.

Provided are a SmFeN magnetic powder which is superior not only in water resistance and corrosion resistance but also in hot water resistance, and a method of preparing the powder. The present invention relates to a method of preparing a magnetic powder, comprising: plasma-treating a gas; surface-treating a SmFeN magnetic powder with the plasma-treated gas; and forming a coat layer on the surface of the surface-treated SmFeN magnetic powder.

Disclosed is a coated composite comprising a seal coat disposed on a composite material wherein the seal coat comprises protective particles and a matrix.

Disclosed is a coated composite comprising a seal coat disposed on a composite material wherein the seal coat comprises protective particles and a matrix.

A method for processing a component is provided and includes masking a first portion of the component with a maskant. The maskant includes a slurry having a plurality of particles in a fluid carrier. The plurality of particles comprises at least one of silicon, carbon, one or more rare earth disilicates, monosilicates or oxides, and combinations thereof. The method includes depositing a silicon-based coating on a second portion of the component via a chemical vapor deposition process and removing the maskant and any overlying silicon-based coating from the first portion of the component.

A method for processing a component is provided and includes masking a first portion of the component with a maskant. The maskant includes a slurry having a plurality of particles in a fluid carrier. The plurality of particles comprises at least one of silicon, carbon, one or more rare earth disilicates, monosilicates or oxides, and combinations thereof. The method includes depositing a silicon-based coating on a second portion of the component via a chemical vapor deposition process and removing the maskant and any overlying silicon-based coating from the first portion of the component.