The invention relates to a process for metallizing ferrite ceramics, which comprises the following steps: arrangement of a contact element composed of copper or a copper alloy on a surface of the ferrite ceramic, melting of the contact element at least in the region in which the contact element contacts the surface of the ferrite ceramic, and cooling of the contact element and the ferrite ceramic to below the melting point of copper or the copper alloy.

A wiring substrate includes an insulating substrate, a conductor and an Ni film. The insulating substrate has a first surface and a second surface on a side opposite the first surface, and contains AlN. The conductor is disposed on the first surface and contains Cu. The Ni film is disposed so as to extend across an upper surface and a side surface of the conductor to the first surface. Ti oxide is scattered so as to be at a plurality of points on the first surface.

A wiring substrate includes an insulating substrate, a conductor and an Ni film. The insulating substrate has a first surface and a second surface on a side opposite the first surface, and contains AlN. The conductor is disposed on the first surface and contains Cu. The Ni film is disposed so as to extend across an upper surface and a side surface of the conductor to the first surface. Ti oxide is scattered so as to be at a plurality of points on the first surface.

Methods for producing components for use in high temperature systems that include reacting a fluid reactant and a porous preform that has a pore volume and contains a solid oxide reactant that defines a solid volume of the porous preform. The method includes infiltrating the fluid reactant into the porous preform to react with the solid oxide reactant to produce a oxide/metal composite component, during which a displacing metal replaces a displaceable species of the solid oxide reactant to produce at least one solid oxide reaction product that has a reaction product volume that at least partially fills the pore volume. The oxide/metal composite component includes at least one oxide phase and at least one metal phase. The component is exposed to temperatures greater than 500° C. and the at least one oxide phase and the at least one metal phase exhibit thermal expansion values within 50% of one another.

Methods for producing components for use in high temperature systems that include reacting a fluid reactant and a porous preform that has a pore volume and contains a solid oxide reactant that defines a solid volume of the porous preform. The method includes infiltrating the fluid reactant into the porous preform to react with the solid oxide reactant to produce a oxide/metal composite component, during which a displacing metal replaces a displaceable species of the solid oxide reactant to produce at least one solid oxide reaction product that has a reaction product volume that at least partially fills the pore volume. The oxide/metal composite component includes at least one oxide phase and at least one metal phase. The component is exposed to temperatures greater than 500° C. and the at least one oxide phase and the at least one metal phase exhibit thermal expansion values within 50% of one another.

In a method of making a gaseous emissions treatment component, a ‘green’ ceramic mix is extruded through a die to form an extrusion having cells extending along the extrusion, the cells being bounded by walls dividing adjacent cells from one another. In concert with the extruding, metal is fed through the die with the extruded mix. A length of the extrusion and associated metal is then cut off and fired to form the component.

In a method of making a gaseous emissions treatment component, a ‘green’ ceramic mix is extruded through a die to form an extrusion having cells extending along the extrusion, the cells being bounded by walls dividing adjacent cells from one another. In concert with the extruding, metal is fed through the die with the extruded mix. A length of the extrusion and associated metal is then cut off and fired to form the component.

Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).

Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).

Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).