Patent classifications
C04B41/5338
METHOD OF MANUFACTURING NITRIDE CERAMIC SUBSTRATE AND NITRIDE CERAMIC BASE MATERIAL
A scribe line is formed on a first surface of a nitride ceramic base material by a laser. Next, the nitride ceramic base material is divided along the scribe line. The scribe line includes a plurality of recessed portions. The plurality of recessed portions are formed in a row on the first surface of the nitride ceramic base material. A depth of each of the plurality of recessed portions is equal to or greater than 0.70 times and equal to or smaller than 1.10 times an opening width of each of the plurality of recessed portions. The opening width of each of the plurality of recessed portions is equal to or greater than 1.00 times and equal to or smaller than 1.10 times an inter-center distance of the plurality of recessed portions.
Mechanical ceramic matrix composite (CMS) repair
Various embodiments include a metal-repaired ceramic matrix composite (CMC) article, and a method of repairing a CMC article having a defect. Particular embodiments include a method including: removing a defect-containing portion of the CMC article; forming at least one opening in a remaining portion of the CMC article; preparing a metal repair preform for replacing at least the removed portion of the CMC article, wherein a portion of the metal repair preform complements the at least one opening; and attaching the metal repair preform to the remaining portion of the CMC article.
Preparation of Layered MXene via Elemental Halogen Etching of MAX Phase
A method of making a layered MXene material comprises a) introducing dried MAX phase powder into a vessel under anhydrous, inert conditions, the MAX phase powder comprising a general formula of M.sub.n+1AX.sub.n (n=1, 2, 3, or 4), wherein M is a transition metal or p-block metalloid selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Re, Cu, Ni, Ag, Zn, Cd, In, Sn, and Pb; interlayer A is a Group III, IV, or V metalloid selected from the group consisting of Al, Si, Ga, Ge, In, Sn, Pb, As, Bi, Sb, and X is one of C (carbon) and N (nitrogen); b) introducing a halogen and solvent to the dried MAX phase to create a halogen solution having a predetermined concentration; c) allowing a reaction to proceed for about 24 hours between 30-90 C. to create a reaction slurry comprising a MXene material.
Transferring nanostructures from wafers to transparent substrates
Embodiments of the present disclosure generally relate to methods of forming optical devices comprising nanostructures disposed on transparent substrates. A substrate, such as a silicon wafer, is provided as a base for forming an optical device. A transparent layer is disposed on a first surface of the substrate, and a structure layer is disposed on the transparent surface. An etch mask layer is disposed on a second surface of the substrate opposite the first surface, and a window or opening is formed in the etch mask layer to expose a portion of the second surface of the substrate. A plurality of nanostructures is then formed in the structure layer, and a portion of the substrate extending from the window to the transparent layer is removed. A portion of the transparent layer having nanostructures disposed thereon is then detached from the substrate to form an optical device.
TRANSFERRING NANOSTRUCTURES FROM WAFERS TO TRANSPARENT SUBSTRATES
Embodiments of the present disclosure generally relate to methods of forming optical devices comprising nanostructures disposed on transparent substrates. A substrate, such as a silicon wafer, is provided as a base for forming an optical device. A transparent layer is disposed on a first surface of the substrate, and a structure layer is disposed on the transparent surface. An etch mask layer is disposed on a second surface of the substrate opposite the first surface, and a window or opening is formed in the etch mask layer to expose a portion of the second surface of the substrate. A plurality of nanostructures is then formed in the structure layer, and a portion of the substrate extending from the window to the transparent layer is removed. A portion of the transparent layer having nanostructures disposed thereon is then detached from the substrate to form an optical device.
Body made of a ceramic material
A body made of a ceramic material having a surface region extending from the surface of the body to a predetermined depth and a core region being integrally formed with the surface region. The ceramic material in the surface region includes a calcium containing crystalline phase.
MECHANICAL CERAMIC MATRIX COMPOSITE (CMC) REPAIR
Various embodiments include a metal-repaired ceramic matrix composite (CMC) article, and a method of repairing a CMC article having a defect. Particular embodiments include a method including: removing a defect-containing portion of the CMC article; forming at least one opening in a remaining portion of the CMC article; preparing a metal repair preform for replacing at least the removed portion of the CMC article, wherein a portion of the metal repair preform complements the at least one opening; and attaching the metal repair preform to the remaining portion of the CMC article.
MATERIAL SURFACE TREATMENT EQUIPMENT, MATERIAL SURFACE TREATMENT METHOD AND SILICON CARBIDE MATERIAL SURFACE TREATMENT METHOD
The invention provides a material surface treatment equipment, which is applied to a material substrate. The material surface treatment equipment includes a surface treatment device and at least one waveguide device. The surface treatment device is used to carry the material substrate to perform a surface treatment process. Each waveguide device is used for introducing electromagnetic waves to the material substrate to assist in performing the surface treatment process. Through the introduction of electromagnetic waves, the surface treatment process of the material substrate is easy to perform and can achieve the strengthening effect.
METHOD FOR TREATING A SILICON CARBIDE FIBRE
A method for treating at least one silicon carbide fibre includes a surface layer including carbon and/or a silicon oxycarbide, the treatment including at least removing the surface layer from the fibre by placing in contact with an ammonia phase in the supercritical state.
METHOD FOR TREATING A SILICON CARBIDE FIBRE
A method for treating at least one silicon carbide fibre includes a surface layer including carbon and/or a silicon oxycarbide, the treatment including at least removing the surface layer from the fibre by placing in contact with an ammonia phase in the supercritical state.