A molecular resist composition comprising a sulfonium salt having a cation of specific structure and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR, when processed by EB or EUV lithography.

A molecular resist composition comprising a sulfonium salt having a cation of specific structure and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR, when processed by EB or EUV lithography.

Provided herein are methods of altering enantiomeric excess. The methods may include irradiating an atropisomer that includes at least one chiral substituent to alter the enantiomeric excess of the atropisomer. The at least one chiral substituent may be removed following irradiation.

Provided herein are methods of altering enantiomeric excess. The methods may include irradiating an atropisomer that includes at least one chiral substituent to alter the enantiomeric excess of the atropisomer. The at least one chiral substituent may be removed following irradiation.

A pretreatment solution for inkjet recording contains a photoacid generator that generates sulfonic acid through light exposure. The photoacid generator may be a compound represented by a general formula (I) or (II), wherein R.sup.1 represents a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heterocyclic group, a fluorine atom, a nitro group, or a cyano group; and R.sup.2 represents a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted alkynyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted cycloalkenyl group, a substituted or unsubstituted cycloalkynyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heterocyclic group, an acylamide group, a sulfonylamide group, or a halogen atom

##STR00001##

A pretreatment solution for inkjet recording contains a photoacid generator that generates sulfonic acid through light exposure. The photoacid generator may be a compound represented by a general formula (I) or (II), wherein R.sup.1 represents a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heterocyclic group, a fluorine atom, a nitro group, or a cyano group; and R.sup.2 represents a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted alkynyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted cycloalkenyl group, a substituted or unsubstituted cycloalkynyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heterocyclic group, an acylamide group, a sulfonylamide group, or a halogen atom

##STR00001##

A molecular resist composition and a pattern forming process. A molecular resist composition comprising a sulfonium salt having a cation of specific structure and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR, when processed by EB or EUV lithography. The molecular resist composition does not contain a base polymer. The molecular resist composition comprising a sulfonium salt having a cation of specific partial structure has a high sensitivity and forms a resist film with improved resolution and LWR, so that the resist composition is quite useful for precise micropatterning.

A molecular resist composition and a pattern forming process. A molecular resist composition comprising a sulfonium salt having a cation of specific structure and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR, when processed by EB or EUV lithography. The molecular resist composition does not contain a base polymer. The molecular resist composition comprising a sulfonium salt having a cation of specific partial structure has a high sensitivity and forms a resist film with improved resolution and LWR, so that the resist composition is quite useful for precise micropatterning.

Provided herein are methods of altering enantiomeric excess. The methods may include irradiating an atropisomer that includes at least one chiral substituent to alter the enantiomeric excess of the atropisomer. The at least one chiral substituent may be removed following irradiation.

Provided herein are methods of altering enantiomeric excess. The methods may include irradiating an atropisomer that includes at least one chiral substituent to alter the enantiomeric excess of the atropisomer. The at least one chiral substituent may be removed following irradiation.