A resist topcoat composition and a method of forming patterns using the resist topcoat composition. The resist topcoat composition includes an acrylic copolymer including a first structural unit represented by Chemical Formula M-1, and a second structural unit represented by Chemical Formula M-2; an acid compound; and a solvent

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A resist topcoat composition and a method of forming patterns using the resist topcoat composition. The resist topcoat composition includes an acrylic copolymer including a first structural unit represented by Chemical Formula M-1, and a second structural unit represented by Chemical Formula M-2; an acid compound; and a solvent

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The present invention aims to provide a method by which fluorine-containing sulfide compounds, particularly sulfide compounds that contain hydrogen and fluorine, can be produced in a simple, low-cost and industrial manner. Provided is a method of producing a fluorine-containing sulfide compound represented by the following formula (2):
(F).sub.n-A.sup.3-S-A.sup.4-(F).sub.m  (2)
(wherein A.sup.3 and A.sup.4 are independently an optionally substituted hydrocarbyl group with a carbon number of 1 to 3; n and m represent the numbers of fluorine atoms binding to A.sup.3 and A.sup.4, with n+m=1 to 13 being satisfied), comprising reacting a chlorine-containing sulfide compound represented by the following formula (1):
(Cl).sub.n-A.sup.1-S-A.sup.2-(Cl).sub.m  (1)
(wherein A.sup.1 and A.sup.2 are independently an optionally substituted hydrocarbyl group with a carbon number of 1 to 3; n and m represent the numbers of chlorine atoms binding to A.sup.1 and A.sup.2, with n+m=1 to 13 being satisfied) and a fluorinating agent.

The present invention aims to provide a method by which fluorine-containing sulfide compounds, particularly sulfide compounds that contain hydrogen and fluorine, can be produced in a simple, low-cost and industrial manner. Provided is a method of producing a fluorine-containing sulfide compound represented by the following formula (2):
(F).sub.n-A.sup.3-S-A.sup.4-(F).sub.m  (2)
(wherein A.sup.3 and A.sup.4 are independently an optionally substituted hydrocarbyl group with a carbon number of 1 to 3; n and m represent the numbers of fluorine atoms binding to A.sup.3 and A.sup.4, with n+m=1 to 13 being satisfied), comprising reacting a chlorine-containing sulfide compound represented by the following formula (1):
(Cl).sub.n-A.sup.1-S-A.sup.2-(Cl).sub.m  (1)
(wherein A.sup.1 and A.sup.2 are independently an optionally substituted hydrocarbyl group with a carbon number of 1 to 3; n and m represent the numbers of chlorine atoms binding to A.sup.1 and A.sup.2, with n+m=1 to 13 being satisfied) and a fluorinating agent.

The present invention aims to provide a method by which fluorine-containing sulfide compounds, particularly sulfide compounds that contain hydrogen and fluorine, can be produced in a simple, low-cost and industrial manner. Provided is a method of producing a fluorine-containing sulfide compound represented by the following formula (2):
(F).sub.n-A.sup.3-S-A.sup.4-(F).sub.m  (2)
(wherein A.sup.3 and A.sup.4 are independently an optionally substituted hydrocarbyl group with a carbon number of 1 to 3; n and m represent the numbers of fluorine atoms binding to A.sup.3 and A.sup.4, with n+m=1 to 13 being satisfied), comprising reacting a chlorine-containing sulfide compound represented by the following formula (1):
(Cl).sub.n-A.sup.1-S-A.sup.2-(Cl).sub.m  (1)
(wherein A.sup.1 and A.sup.2 are independently an optionally substituted hydrocarbyl group with a carbon number of 1 to 3; n and m represent the numbers of chlorine atoms binding to A.sup.1 and A.sup.2, with n+m=1 to 13 being satisfied) and a fluorinating agent.

Disclosed are sulfur-containing compounds for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The plasma etching compounds may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

Disclosed are sulfur-containing compounds for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The plasma etching compounds may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

Provided is a novel production method for a fluorinated organic compound (1), the method comprising step A of fluorinating a hydrogen atom-containing organic compound (2) using IF.sub.5 in a liquid composition comprising an organic solvent, the amount of the hydrogen atom-containing organic compound (2) being 1.8 mol or more per liter of the organic solvent.

Provided is a novel production method for a fluorinated organic compound (1), the method comprising step A of fluorinating a hydrogen atom-containing organic compound (2) using IF.sub.5 in a liquid composition comprising an organic solvent, the amount of the hydrogen atom-containing organic compound (2) being 1.8 mol or more per liter of the organic solvent.

The present invention aims to provide a method by which fluorine-containing sulfide compounds, particularly sulfide compounds that contain hydrogen and fluorine, can be produced in a simple, low-cost and industrial manner. Provided is a method of producing a fluorine-containing sulfide compound represented by the following formula (2):

(F).sub.n-A.sup.3-S-A.sup.4-(F).sub.m(2)

(wherein A.sup.3 and A.sup.4 are independently an optionally substituted hydrocarbyl group with a carbon number of 1 to 3; n and m represent the numbers of fluorine atoms binding to A.sup.3 and A.sup.4, with n+m=1 to 13 being satisfied), comprising reacting a chlorine-containing sulfide compound represented by the following formula (1):

(Cl).sub.n-A.sup.1-S-A.sup.2-(Cl).sub.m(1)

(wherein A.sup.1 and A.sup.2 are independently an optionally substituted hydrocarbyl group with a carbon number of 1 to 3; n and m represent the numbers of chlorine atoms binding to A.sup.1 and A.sup.2, with n+m=1 to 13 being satisfied) and a fluorinating agent.