A substrate processing apparatus includes: a chamber; a raw material tank in which a raw material of a processing gas is accommodated; a carrier gas supply unit that supplies a carrier gas to the raw material tank; a mixed gas flow path connected to the raw material tank, and through which a mixed gas of the processing gas obtained from the raw material of the processing gas and the carrier gas flows therethrough; a concentration tank connected to a downstream of the mixed gas flow path, accommodating a porous member including a metal-organic framework; a desorption mechanism that desorbs the processing gas adsorbed to the porous member; and a concentration gas flow path that allows the processing gas desorbed from the porous member to flow to the chamber.

A resist composition which generates an acid upon exposure and whose solubility in a developing solution is changed due to an action of the acid, the resist composition including a base material component whose solubility in a developing solution is changed due to the action of an acid; and a compound represented by Formula (d1) in which R.sup.b1 and R.sup.b2 each independently represents COO.sup., COOH, or a hydroxyl group, where at least one of R.sup.b1 and R.sup.b2 represents COO.sup., R.sup.b3, R.sup.b4, and R.sup.b5 each independently represents a hydroxyl group or a halogen atom, R.sup.b6 to R.sup.b8 each independently represents an alkyl group, nb3 represents an integer of 0 to 4, nb4 and nb5 each independently represents an integer of 0 to 2, nb6 to nb8 each independently represents an integer of 0 to 5, m represents 1 or 2, and q represents an integer of 0 to 3.)

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