The present invention relates to a compound of Formula (I)/(II) or pharmaceutically acceptable salts thereof. In Formula (I), Rh, Rg, Rf, m, Re, Rd, Ra, Rb, and Rc are as defined in the description. The present invention further relates to a pharmaceutical composition comprising the compound of Formula (I)/(II) or pharmaceutically acceptable salts thereof, and use of the compound of Formula (I)/(II) or the pharmaceutical composition in the manufacture of a medicament for treating inflammations such as rheumatoid arthritis. ##STR00001##

The present invention relates to a compound of Formula (I)/(II) or pharmaceutically acceptable salts thereof. In Formula (I), Rh, Rg, Rf, m, Re, Rd, Ra, Rb, and Rc are as defined in the description. The present invention further relates to a pharmaceutical composition comprising the compound of Formula (I)/(II) or pharmaceutically acceptable salts thereof, and use of the compound of Formula (I)/(II) or the pharmaceutical composition in the manufacture of a medicament for treating inflammations such as rheumatoid arthritis. ##STR00001##

The present invention is a resist material containing a quencher, where the quencher contains a sulfonium salt of a carboxylic acid bonded to a maleimide group. In a chemically amplified resist material in which an acid is used as a catalyst, it is desired to develop a quencher that makes it possible to reduce LWR of line patterns and critical dimension uniformity (CDU) of hole patterns, and to improve sensitivity. For this purpose, it is necessary to reduce image blurs due to acid diffusion considerably. An object of the present invention is to provide: a resist material having high sensitivity, low LWR, and low CDU in both a positive resist material and a negative resist material; and a patterning process using the same.

The present invention is a resist material containing a quencher, where the quencher contains a sulfonium salt of a carboxylic acid bonded to a maleimide group. In a chemically amplified resist material in which an acid is used as a catalyst, it is desired to develop a quencher that makes it possible to reduce LWR of line patterns and critical dimension uniformity (CDU) of hole patterns, and to improve sensitivity. For this purpose, it is necessary to reduce image blurs due to acid diffusion considerably. An object of the present invention is to provide: a resist material having high sensitivity, low LWR, and low CDU in both a positive resist material and a negative resist material; and a patterning process using the same.

Compounds having cytotoxic and/or anti-mitotic activity are disclosed. Methods associated with preparation and use of such compounds, as well as pharmaceutical compositions comprising such compounds, are also disclosed. Also disclosed are compositions having the structure: (T)-(L)-(D), wherein (T) is a targeting moiety, (L) is an optional linker, and (D) is a compound having cytotoxic and/or anti-mitotic activity.

The invention provides novel methods for preparing indolinobenzodiazepine dimer compounds and their synthetic precursors.

The invention provides novel methods for preparing indolinobenzodiazepine dimer compounds and their synthetic precursors.

An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate, and a material for forming an organic film containing the compound. A material for forming an organic film, including: (A) a compound for forming an organic film shown by the following general formula (1A); and (B) an organic solvent, ##STR00001## noting that in the general formula (1B), when W.sub.1 represents ##STR00002##  R.sub.1 does not represent any of ##STR00003##

An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate, and a material for forming an organic film containing the compound. A material for forming an organic film, including: (A) a compound for forming an organic film shown by the following general formula (1A); and (B) an organic solvent, ##STR00001## noting that in the general formula (1B), when W.sub.1 represents ##STR00002##  R.sub.1 does not represent any of ##STR00003##

To improve the emission efficiency, the driving voltage and the lifetime of an organic light-emitting device using a delayed fluorescent material. A host material for a delayed fluorescent material, containing a compound represented by the following general formula: R.sup.1 to R.sup.5 each are a substituent not containing a cyano group. n1 to n5 each are 0 to 4, Ar is a monocyclic arylene group or a monocyclic heteroarylene group.

##STR00001##